Patent search ap:("IBM") AND inv:"STUART M BURNS" Page 1

1.

发明专利
METHOD FOR MAKING FIELD EFFECT TRANSISTORS WITH IMPROVED IMPLANTS 未知

公开(公告)号：SG105493A1

公开(公告)日：2004-08-27

申请号：SG200102115

申请日：1999-02-15

Applicant: IBM

Inventor： DIANE CATHERINE BOYD , STUART M BURNS , HUSSEIN IBRAHIM HANAFI , YUAN TAUR , WILLIAM C WILLE

IPC: H01L21/76 , H01L21/336 , H01L21/762 , H01L21/8234 , H01L27/08 , H01L29/78 , H01L21/3205 , H01L21/4763

2.

发明专利
ANISOTROPIC NITRIDE ETCH PROCESS WITH HIGH SELECTIVITY TO OXIDE AND PHOTORESIST LAYERS IN A DAMASCENE ETCH SCHEME 未知

公开(公告)号：SG98375A1

公开(公告)日：2003-09-19

申请号：SG200002004

申请日：2000-04-07

Applicant: IBM

Inventor： DIANE C BOYD , RICHARD WISE , WILLIAM C WILLIE , WALDERMAR W KOCON , STUART M BURNS , HUSSEIN I HANAFI

IPC: H01L29/417 , H01L21/302 , H01L21/3065 , H01L21/311 , H01L21/336 , H01L21/762 , H01L21/8234 , H01L21/8242 , H01L27/108 , H01L29/78 , B08B7/00 , H01L21/00

3.

发明专利
FIELD EFFECT TRANSISTORS WITH VERTICAL GATE SIDE WALLS AND METHOD FOR MAKING SUCH TRANSISTORS 未知

公开(公告)号：SG81962A1

公开(公告)日：2001-07-24

申请号：SG1999000602

申请日：1999-02-15

Applicant: IBM

Inventor： DIANE C BOYD , STUART M BURNS , HUSSEIN I HANAFI , YUAN TAUR , WILLIAM C WILLE

IPC: H01L21/336 , H01L29/78

4.

发明专利
FIELD EFFECT TRANSISTORS WITH IMPROVED IMPLANTS AND METHOD FOR MAKING SUCH TRANSISTORS 未知

公开(公告)号：SG81963A1

公开(公告)日：2001-07-24

申请号：SG1999000608

申请日：1999-02-15

Applicant: IBM

Inventor： DIANE C BOYD , STUART M BURNS , HUSSEIN I HANAFI , YUAN TAUR , WILLIAM C WILLE

IPC: H01L21/76 , H01L21/336 , H01L21/762 , H01L21/8234 , H01L27/08 , H01L29/78 , H01L21/8232

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