公开(公告)号：JP2000058655A

公开(公告)日：2000-02-25

申请号：JP17440199

申请日：1999-06-21

Applicant: IBM

Inventor： ARNDT KENNETH C ,  GAMBINO JEFFREY P ,  MANDELMAN JACK A ,  NARAYAN CHANDRASEKHAR ,  SCHNABEL RAINER F ,  SCHUTZ RONALD J ,  TOEBBEN DIRK

IPC: H01L21/82 ,  H01L21/768 ,  H01L23/525

Abstract: PROBLEM TO BE SOLVED: To improve the control of thickness of an insulator layer on a fuse structure, by a method wherein a dielectric structure is positioned on a conduction level, and electric connection is performed at a selected position of the conduction level through the dielectric structure. SOLUTION: On a semiconductor substrate 10 an electric conduction level 1 is formed by using conductive material selected out of aluminum, copper, aluminum copper alloy, and doped polysilicon having metal type conductivity. A dielectric etching stop material layer 2 is stuck on the upper surface of the electric conduction level 1. Electric connection is performed to a selected position of the electric conduction level 1 through the dielectric etching stop material layer 2, and a conductive fuse 21 is constituted. As a result control of the thickness of an insulator layer on the fuse structure containing a self-aligned isolation cap can be improved.