PERSISTENT FLUX BIASING METHODOLOGY FOR SUPERCONDUCTING LOOPS

    公开(公告)号:SG11202109840WA

    公开(公告)日:2021-10-28

    申请号:SG11202109840W

    申请日:2020-03-27

    Applicant: IBM

    Abstract: A tunable qubit device includes a tunable qubit, the tunable qubit including a superconducting quantum interference device (SQUID) loop. The tunable qubit device further includes a superconducting loop inductively coupled to the SQUID loop, and a flux bias line inductively coupled to the superconducting loop. The superconducting loop includes a superconducting material having a critical temperature that is a lower temperature than a critical temperature of any superconducting material of the tunable qubit. In operation, the superconducting loop provides a persistent bias to the tunable qubit.

    VERTICAL SUPERINDUCTOR DEVICE
    2.
    发明专利

    公开(公告)号:SG11202109827WA

    公开(公告)日:2021-10-28

    申请号:SG11202109827W

    申请日:2020-03-25

    Applicant: IBM

    Abstract: A fluxonium qubit includes a superinductor. The superinductor includes a substrate, and a first vertical stack extending in a vertical direction from a surface of the substrate. The first vertical stack includes a first Josephson junction and a second Josephson junction connected in series along the vertical direction. The superinductor includes a second vertical stack extending in a vertical direction from a surface of the substrate. The second vertical stack includes a third Josephson junction. The superinductor includes a superconducting connector connecting the first and second vertical stacks in series such that the first, second, and third Josephson junctions are connected in series. The fluxonium qubit further includes a shunted Josephson junction connected to the superinductor with superconducting wires such that the first, second, and third Josephson junctions of the superinductor that are in series are connected in parallel with the shunted Josephson junction.

    Acoplamiento trasero con TSV parcial superconductor para qubits transmon

    公开(公告)号:ES2896013T3

    公开(公告)日:2022-02-23

    申请号:ES18795343

    申请日:2018-10-19

    Applicant: IBM

    Abstract: Un dispositivo de acoplamiento capacitivo superconductor (202) que comprende: una zanja (602) a través de un sustrato (201), desde la parte posterior del sustrato, alcanzando una profundidad en el sustrato, sustancialmente ortogonal a un plano de fabricación en una parte frontal del sustrato, siendo la profundidad menor que el espesor del sustrato; un material superconductor (SC2) depositado como una capa de vía (208) en la zanja con un espacio entre las superficies de la capa de vía en la zanja que permanece accesible desde la parte trasera; una almohadilla superconductora (206) en el lado frontal, acoplando la almohadilla superconductora con un elemento de circuito lógico cuántico fabricado en la parte frontal; y una extensión (304, 306) de la capa de vía en la parte trasera, en la que la extensión se acopla a un elemento de circuito de lectura cuántica fabricado en la parte trasera.

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