Fabrication of qubit with self defined Josephson junction

    公开(公告)号:AU2020381881A1

    公开(公告)日:2022-05-12

    申请号:AU2020381881

    申请日:2020-11-13

    Applicant: IBM

    Abstract: A method of making a Josephson junction in a superconducting qubit includes providing a substrate (100) having a convex structure with a first face (402A) and a second face (402B) meeting at an edge (402C), depositing a first layer of superconducting material (502A) on the first face, oxidizing the first layer to form a layer of oxide material (504A) on a surface of the first layer, and depositing a second layer of the superconducting material (506A) on the second face. A portion of the second layer is in contact with a portion of the layer of oxide material at or in the vicinity of the edge such that the portion of the layer of oxide material is sandwiched between a portion of the first layer and the portion of the second layer to define the Josephson junction at or in the vicinity of the edge.

    Vertical superinductor device
    2.
    发明专利

    公开(公告)号:IL286610D0

    公开(公告)日:2021-10-31

    申请号:IL28661021

    申请日:2021-09-22

    Abstract: A fluxonium qubit includes a superinductor. The superinductor includes a substrate, and a first vertical stack extending in a vertical direction from a surface of the substrate. The first vertical stack includes a first Josephson junction and a second Josephson junction connected in series along the vertical direction. The superinductor includes a second vertical stack extending in a vertical direction from a surface of the substrate. The second vertical stack includes a third Josephson junction. The superinductor includes a superconducting connector connecting the first and second vertical stacks in series such that the first, second, and third Josephson junctions are connected in series. The fluxonium qubit further includes a shunted Josephson junction connected to the superinductor with superconducting wires such that the first, second, and third Josephson junctions of the superinductor that are in series are connected in parallel with the shunted Josephson junction.

    A switch device facilitating frequency shift of a resonator in a quantum device

    公开(公告)号:AU2020399936A1

    公开(公告)日:2022-05-26

    申请号:AU2020399936

    申请日:2020-12-07

    Applicant: IBM

    Abstract: Devices, systems, methods, computer-implemented methods, apparatus, and/or computer program products that can facilitate a switch device that shifts frequency of a resonator in a quantum device are provided. According to an embodiment, a device (102) comprises a readout resonator (104) coupled to a qubit. The device can further comprise a switch device (108) formed across the readout resonator that shifts frequency of the readout resonator based on position of the switch device. According to another embodiment, a device comprises a bus resonator coupled to a plurality of qubits. The device can further comprise a switch device formed across the bus resonator that shifts frequency of the bus resonator based on position of the switch device.

    Metodologia de viés de fluxo persistente para circuitos fechados supercondutores

    公开(公告)号:BR112021021289A2

    公开(公告)日:2022-01-18

    申请号:BR112021021289

    申请日:2020-03-27

    Applicant: IBM

    Abstract: metodologia de viés de fluxo persistente para circuitos fechados supercondutores. um dispositivo qubit ajustável inclui um qubit ajustável, o qubit ajustável incluindo um circuito fechado de dispositivo de interferência quântica supercondutor (squid). o dispositivo de qubit ajustável inclui ainda um circuito fechado supercondutor indutivo acoplado ao circuito fechado squid, e uma linha de viés de fluxo indutivamente acoplada ao circuito fechado supercondutor. o circuito fechado supercondutor inclui um material supercondutor com uma temperatura crítica que é uma temperatura mais baixa do que uma temperatura crítica de qualquer material supercondutor do qubit ajustável. em operação, o circuito fechado supercondutor fornece um viés persistente ao qubit ajustável.

    Transmon qubits with trenched capacitor structures

    公开(公告)号:IL286615D0

    公开(公告)日:2021-10-31

    申请号:IL28661521

    申请日:2021-09-22

    Abstract: A qubit includes a substrate, and a first capacitor structure having a lower portion formed on a surface of the substrate and at least one first raised portion extending above the surface of the substrate. The qubit further includes a second capacitor structure having a lower portion formed on the surface of the substrate and at least one second raised portion extending above the surface of the substrate. The first capacitor structure and the second capacitor structure are formed of a superconducting material. The qubit further includes a junction between the first capacitor structure and the second capacitor structure. The junction is disposed at a predetermined distance from the surface of the substrate and has a first end in contact with the first raised portion and a second end in contact with the second raised portion.

    TRANSMON QUBITS WITH TRENCHED CAPACITOR STRUCTURES

    公开(公告)号:SG11202110239YA

    公开(公告)日:2021-10-28

    申请号:SG11202110239Y

    申请日:2020-04-06

    Applicant: IBM

    Abstract: A qubit includes a substrate, and a first capacitor structure having a lower portion formed on a surface of the substrate and at least one first raised portion extending above the surface of the substrate. The qubit further includes a second capacitor structure having a lower portion formed on the surface of the substrate and at least one second raised portion extending above the surface of the substrate. The first capacitor structure and the second capacitor structure are formed of a superconducting material. The qubit further includes a junction between the first capacitor structure and the second capacitor structure. The junction is disposed at a predetermined distance from the surface of the substrate and has a first end in contact with the first raised portion and a second end in contact with the second raised portion.

    PERSISTENT FLUX BIASING METHODOLOGY FOR SUPERCONDUCTING LOOPS

    公开(公告)号:SG11202109840WA

    公开(公告)日:2021-10-28

    申请号:SG11202109840W

    申请日:2020-03-27

    Applicant: IBM

    Abstract: A tunable qubit device includes a tunable qubit, the tunable qubit including a superconducting quantum interference device (SQUID) loop. The tunable qubit device further includes a superconducting loop inductively coupled to the SQUID loop, and a flux bias line inductively coupled to the superconducting loop. The superconducting loop includes a superconducting material having a critical temperature that is a lower temperature than a critical temperature of any superconducting material of the tunable qubit. In operation, the superconducting loop provides a persistent bias to the tunable qubit.

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