公开(公告)号：EP2255361A4

公开(公告)日：2014-06-18

申请号：EP09722811

申请日：2009-02-26

Applicant: IBM

Inventor： ASSEFA SOLOMON ,  KANAKASABAPATHY SIVANANDA K ,  NOWAK JANUSZ JOZEF ,  TROUILLOUD PHILIP L

IPC: G11C11/16 ,  H01L23/552 ,  H01L27/22 ,  H01L43/08

CPC classification number: H01L27/228 ,  G11C11/1659 ,  H01L43/08 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Techniques for shielding magnetic memory cells from magnetic fields are presented. In accordance with aspects of the invention, a magnetic storage element is formed with at least one conductive segment electrically coupled to the magnetic storage element. At least a portion of the conductive segment is surrounded with a magnetic liner. The magnetic liner is operative to divert at least a portion of a magnetic field created by a current passing through the conductive segment away from the magnetic storage element.

公开(公告)号：JP2011091429A

公开(公告)日：2011-05-06

申请号：JP2010284599

申请日：2010-12-21

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： ABRAHAM DAVID W ,  TROUILLOUD PHILIP L

IPC: H01L27/105 ,  G11C11/15 ,  G11C11/16 ,  H01L21/8246 ,  H01L43/08

CPC classification number: H01L43/08 ,  G11C11/161 ,  H01L27/222

Abstract: PROBLEM TO BE SOLVED: To provide a MTJ device which can be manufactured leaving freedom to finely tune coercive force and to obtain an appreciable MR, and to provide a memory array including the same. SOLUTION: The magnetic tunnel junction device 200 is provided that includes a free layer 205 and a pinned layer 260 separated by a barrier layer. According to the invention, the free layer 205 includes a ferrimagnetic layer 210 and an anti-parallel layer 220. A magnetic moment of the anti-parallel layer 220 is substantially anti-parallel to a magnetic moment of the ferrimagnetic layer 210 at least within a prescribed temperature range of the magnetic tunnel junction device 200. A memory array that includes such a magnetic tunnel junction 200 is also provided. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：为了提供可以制造的MTJ装置，保留微调矫顽力并获得可观MR的自由度，并提供包括该MTJ装置的存储器阵列。 解决方案：提供磁性隧道结装置200，其包括自由层205和被势垒层隔开的钉扎层260。 根据本发明，自由层205包括铁磁性层210和反平行层220.反平行层220的磁矩基本上与铁氧体层210的磁矩反平行至少在 也提供了磁隧道结装置200的规定温度范围。还提供了包括这种磁性隧道结200的存储器阵列。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2004072090A

公开(公告)日：2004-03-04

申请号：JP2003178747

申请日：2003-06-23

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： ABRAHAM DAVID W ,  TROUILLOUD PHILIP L

IPC: G11C11/15 ,  G11C11/16 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08

CPC classification number: H01L43/08 ,  G11C11/161 ,  H01L27/222

Abstract: PROBLEM TO BE SOLVED: To provide an MTJ device capable of fabrication while leaving freedom for making fine adjustments on coercive force and leaving freedom for realizing MR of a corresponding degree, and a memory array comprising the MTJ device.
SOLUTION: A magnetic tunnel junction device 200 is provided which comprises a free layer 205 separated by a barrier layer and a pinned layer 260. The free layer 205 comprises a ferry magnetic layer 210 and an antiparallel layer 220. The magnetizing moment of the antiparallel layer 220 is substantially antiparallel with the magnetizing moment of the ferry magnetic layer 210 at least within the predetermined temperatures of the magnetic tunnel junction device 200. The memory array comprising the magnetic tunnel junction device 200 is also provided.
COPYRIGHT: (C)2004,JPO

公开(公告)号：WO2009117228A3

公开(公告)日：2009-12-30

申请号：PCT/US2009035285

申请日：2009-02-26

Applicant: IBM ,  ASSEFA SOLOMON ,  KANAKASABAPATHY SIVANANDA K ,  NOWAK JANUSZ JOZEF ,  TROUILLOUD PHILIP L

Inventor： ASSEFA SOLOMON ,  KANAKASABAPATHY SIVANANDA K ,  NOWAK JANUSZ JOZEF ,  TROUILLOUD PHILIP L

IPC: G11C11/00

CPC classification number: H01L27/228 ,  G11C11/1659 ,  H01L43/08 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Techniques for shielding magnetic memory cells from magnetic fields are presented. In accordance with aspects of the invention, a magnetic storage element is formed with at least one conductive segment electrically coupled to the magnetic storage element. At least a portion of the conductive segment is surrounded with a magnetic liner. The magnetic liner is operative to divert at least a portion of a magnetic field created by a current passing through the conductive segment away from the magnetic storage element.

Abstract translation: 介绍了磁场对磁记忆体进行屏蔽的技术。 根据本发明的方面，磁存储元件形成有至少一个电耦合到磁存储元件的导电段。 导电段的至少一部分被磁性衬垫包围。 磁性衬垫可操作以将由导电段流过的电流产生的磁场的至少一部分转移离开磁存储元件。

公开(公告)号：GB2502923A

公开(公告)日：2013-12-11

申请号：GB201316237

申请日：2012-02-24

Applicant: IBM

Inventor： HU GUOHAN ,  NOWAK JANUSZ J ,  TROUILLOUD PHILIP L ,  WORLEDGE DANIEL C

IPC: G11C11/16 ,  G11C11/14

Abstract: A magnetic tunnel junction (MTJ) for a magnetic random access memory (MRAM) includes a magnetic free layer having a variable magnetization direction; an iron (Fe) dusting layer formed on the free layer; an insulating tunnel barrier formed on the dusting layer; and a magnetic fixed layer having an invariable magnetization direction, disposed adjacent the tunnel barrier such that the tunnel barrier is located between the free layer and the fixed layer; wherein the free layer and the fixed layer have perpendicular magnetic anisotropy and are magnetically coupled through the tunnel barrier.