公开(公告)号：EP1917678A4

公开(公告)日：2012-08-22

申请号：EP06759161

申请日：2006-05-04

Applicant: IBM

Inventor： KANAKASABAPATHY SIVANANDA K ,  GAIDIS MICHAEL C

IPC: H01L21/00 ,  H01L21/26 ,  H01L21/302 ,  H01L29/78

CPC classification number: H01L43/12 ,  H01L21/76897 ,  H01L27/222 ,  H01L43/08 ,  H01L2924/3011

公开(公告)号：EP1908094A4

公开(公告)日：2009-02-11

申请号：EP05853232

申请日：2005-12-07

Applicant: IBM

Inventor： GAIDIS MICHAEL C ,  KANAKASABAPATHY SIVANANDA K ,  O'SULLIVAN EUGENE J

IPC: H01L21/00 ,  B05C1/00 ,  B44C1/22

CPC classification number: H01L43/12 ,  H01L21/0332 ,  H01L21/0337 ,  H01L27/11507 ,  H01L28/65

Abstract: Techniques for magnetic device (302) fabrication are provided. In one aspect, a method of patterning at least one, e.g., nonvolatile, material comprises the following steps. A hard mask structure (315), comprising thin hard mask layer (316) and thick hard mask layer (318) is formed on at least one surface of the material to be patterned. The hard mask structure is configured to have a base, proximate to the material, and a top opposite the base. The base has one~ or more lateral dimensions that are greater than one or more lateral dimensions of the top of the hard mask structure, such that at least one portion of the base extends out laterally a substantial distance beyond the top. The top of the hard mask structure is at a greater vertical distance from the material being etched than the base. The material is etched.

公开(公告)号：EP2255361A4

公开(公告)日：2014-06-18

申请号：EP09722811

申请日：2009-02-26

Applicant: IBM

Inventor： ASSEFA SOLOMON ,  KANAKASABAPATHY SIVANANDA K ,  NOWAK JANUSZ JOZEF ,  TROUILLOUD PHILIP L

IPC: G11C11/16 ,  H01L23/552 ,  H01L27/22 ,  H01L43/08

CPC classification number: H01L27/228 ,  G11C11/1659 ,  H01L43/08 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Techniques for shielding magnetic memory cells from magnetic fields are presented. In accordance with aspects of the invention, a magnetic storage element is formed with at least one conductive segment electrically coupled to the magnetic storage element. At least a portion of the conductive segment is surrounded with a magnetic liner. The magnetic liner is operative to divert at least a portion of a magnetic field created by a current passing through the conductive segment away from the magnetic storage element.

公开(公告)号：JP2006005342A

公开(公告)日：2006-01-05

申请号：JP2005162158

申请日：2005-06-02

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： GAIDIS MICHAEL C ,  TROUILLOUD PHILLIP L ,  KANAKASABAPATHY SIVANANDA K ,  ABRAHAM DAVID W

IPC: H01L27/105 ,  G11C11/15 ,  G11C11/16 ,  H01L21/8246 ,  H01L27/22 ,  H01L31/113 ,  H01L43/08 ,  H01L43/12

CPC classification number: H01L43/12 ,  G11C11/15 ,  G11C11/16 ,  H01L27/222

Abstract: PROBLEM TO BE SOLVED: To provide a method capable of efficiently forming a magnetism liner profile, making write-in magnetic field concentrate in a free layer of MTJ.
SOLUTION: In an MRAM cell, write-in current is confined inside a low reluctance material. A U-shaped cross-section concentrating magnetic flux to storing elements is attained, in such a way that this material is processed by one among several methods, and that the magnetic flux is transmitted by making a material nearest to the storing elements invalid.
COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：为了提供能够有效地形成磁性衬垫轮廓的方法，使得写入磁场集中在MTJ的自由层中。

解决方案：在MRAM单元中，写入电流限制在低磁阻材料内。 获得了将U形截面集中到存储元件的磁通量，使得这种材料通过几种方法中的一种进行处理，并且通过使最靠近存储元件的材料无效地传输磁通量。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：WO2007024300A2

公开(公告)日：2007-03-01

申请号：PCT/US2006017418

申请日：2006-05-04

Applicant: IBM ,  KANAKASABAPATHY SIVANANDA K ,  GAIDIS MICHAEL C

Inventor： KANAKASABAPATHY SIVANANDA K ,  GAIDIS MICHAEL C

IPC: H01L21/336

CPC classification number: H01L43/12 ,  H01L21/76897 ,  H01L27/222 ,  H01L43/08 ,  H01L2924/3011

Abstract: Techniques for forming a magnetic device are provided. In one aspect, a method of forming a via hole self-aligned with a magnetic device comprises the following steps. A dielectric layer is formed over at least a portion of the magnetic device. The dielectric layer is configured to have an underlayer proximate to the magnetic device which comprises a first material, and an overlayer on a side of the underlayer opposite the magnetic device which comprises a second material. The first material is different from the second material. In a first etching phase, a first etchant is used to etch the dielectric layer, beginning with the overlayer, and through the overlayer. In a second etching phase, a second etchant which is selective for etching the underlayer is used to etch the dielectric layer through the underlayer.

Abstract translation: 提供了用于形成磁性装置的技术。 一方面，形成与磁性装置自对准的通孔的方法包括以下步骤。 在磁性器件的至少一部分上形成电介质层。 电介质层被配置为具有靠近磁性装置的底层，其包括第一材料，并且在与包括第二材料的磁性装置相对的底层的一侧上的覆盖层。 第一种材料与第二种材料不同。 在第一蚀刻阶段中，使用第一蚀刻剂来从覆盖层开始并通过覆盖层来蚀刻介电层。 在第二蚀刻阶段中，使用用于蚀刻底层的第二蚀刻剂来蚀刻通过底层的介电层。

公开(公告)号：WO2009117228A3

公开(公告)日：2009-12-30

申请号：PCT/US2009035285

申请日：2009-02-26

Applicant: IBM ,  ASSEFA SOLOMON ,  KANAKASABAPATHY SIVANANDA K ,  NOWAK JANUSZ JOZEF ,  TROUILLOUD PHILIP L

Inventor： ASSEFA SOLOMON ,  KANAKASABAPATHY SIVANANDA K ,  NOWAK JANUSZ JOZEF ,  TROUILLOUD PHILIP L

IPC: G11C11/00

CPC classification number: H01L27/228 ,  G11C11/1659 ,  H01L43/08 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Techniques for shielding magnetic memory cells from magnetic fields are presented. In accordance with aspects of the invention, a magnetic storage element is formed with at least one conductive segment electrically coupled to the magnetic storage element. At least a portion of the conductive segment is surrounded with a magnetic liner. The magnetic liner is operative to divert at least a portion of a magnetic field created by a current passing through the conductive segment away from the magnetic storage element.

Abstract translation: 介绍了磁场对磁记忆体进行屏蔽的技术。 根据本发明的方面，磁存储元件形成有至少一个电耦合到磁存储元件的导电段。 导电段的至少一部分被磁性衬垫包围。 磁性衬垫可操作以将由导电段流过的电流产生的磁场的至少一部分转移离开磁存储元件。

公开(公告)号：WO2007008251A2

公开(公告)日：2007-01-18

申请号：PCT/US2005044263

申请日：2005-12-07

Applicant: IBM ,  GAIDIS MICHAEL C ,  KANAKASABAPATHY SIVANANDA K ,  O'SULLIVAN EUGENE J

Inventor： GAIDIS MICHAEL C ,  KANAKASABAPATHY SIVANANDA K ,  O'SULLIVAN EUGENE J

IPC: H01L21/302 ,  H01L21/461

CPC classification number: H01L43/12 ,  H01L21/0332 ,  H01L21/0337 ,  H01L27/11507 ,  H01L28/65

Abstract: Techniques for magnetic device fabrication are provided. In one aspect, a method of patterning at least one, e.g., nonvolatile, material comprises the following steps. A hard mask structure is formed on at least one surface of the material to be patterned. The hard mask structure is configured to have a base, proximate to the material, and a top opposite the base. The base has one or more lateral dimensions that are greater than one or more lateral dimensions of the top of the hard mask structure, such that at least one portion of the base extends out laterally a substantial distance beyond the top. The top of the hard mask structure is at a greater vertical distance from the material being etched than the base. The material is etched.

Abstract translation: 提供了磁性器件制造技术。 一方面，图案化至少一种，例如非挥发性材料的方法包括以下步骤。 在待图案化材料的至少一个表面上形成硬掩模结构。 硬掩模结构被配置为具有靠近材料的基部和与基部相对的顶部。 基座具有大于硬掩模结构的顶部的一个或多个横向尺寸的一个或多个横向尺寸，使得基部的至少一部分横向延伸超过顶部的实质距离。 硬掩模结构的顶部距离被蚀刻的材料比基底更大的垂直距离。 材料被蚀刻。

公开(公告)号：CA2614373C

公开(公告)日：2014-05-27

申请号：CA2614373

申请日：2005-12-07

Applicant: IBM

Inventor： GAIDIS MICHAEL C ,  KANAKASABAPATHY SIVANANDA K ,  O'SULLIVAN EUGENE J

IPC: H01L21/302 ,  H01L21/461

Abstract: Techniques for magnetic device fabrication are provided. In one aspect, a method of patterning at least one, e.g., nonvolatile, material comprises the following steps. A hard mask structure is formed on at least one surface of the material to be patterned. The hard mask structure is configured to have a base, proximate to the material, and a top opposite the base. The base has one or more lateral dimensions that are greater than one or more lateral dimensions of the top of the hard mask structure, such that at least one portion of the base extends out laterally a substantial distance beyond the top. The top of the hard mask structure is at a greater vertical distance from the material being etched than the base. The material is etched.

公开(公告)号：DE102016205180B4

公开(公告)日：2019-08-22

申请号：DE102016205180

申请日：2016-03-30

Applicant: IBM

Inventor： FAN SU CHEN ,  KANAKASABAPATHY SIVANANDA K ,  OK INJO ,  YAMASHITA TENKO

IPC: H01L21/8234 ,  H01L21/336 ,  H01L27/088 ,  H01L27/092 ,  H01L29/78

Abstract: Verfahren zum Bilden einer Transistor-Struktur mit mehreren Schwellenspannungen, wobei das Verfahren aufweist:Bilden von wenigstens einem schmalen Kanal (205) und wenigstens einem langen Kanal (207) auf einer Finne (12), wobei das Finnen-Material auf einem Substrat (10) abgeschieden wird, wobei Abstandshalter (18) auf der Finne (12) den wenigstens einen schmalen Kanal und den wenigstens einen langen Kanal definieren, wobei eine epitaxiale Schicht (14) auf der Finne (12) gebildet wird, und wobei eine Schicht (16) aus einem Zwischenschicht-Dielektrikum auf der epitaxialen Schicht gebildet wird;Abscheiden eines dielektrischen Materials (20) mit einem hohen k in dem wenigstens einen schmalen Kanal (205) und dem wenigstens einen langen Kanal (207);Abscheiden einer Metallschicht (220) auf dem dielektrischen Material (20) mit einem hohen k in dem wenigstens einen schmalen Kanal (205) und dem wenigstens einen langen Kanal (207);Zurücksetzen einer Höhe des dielektrischen Materials (20) mit einem hohen k in dem wenigstens einen schmalen Kanal (205) nach einem Durchführen eines Schutz-Prozesses, um den wenigstens einen langen Kanal (207) zu schützen;Entfernen der Metallschicht (220) von dem wenigstens einen schmalen Kanal und dem wenigstens einen langen Kanal nach dem Zurücksetzen der Höhe des dielektrischen Materials (20) mit dem hohen k in dem wenigstens einen schmalen Kanal (205);Abscheiden eines Metalls (22) mit einer Austrittsarbeit (220) in dem wenigstens einen schmalen Kanal (205) und dem wenigstens einen langen Kanal (207);Abscheiden eines Leitungsmetalls (24) für ein Gate, um den wenigstens einen schmalen Kanal (205) und den wenigstens einen langen Kanal (207) zu füllen; undAbscheiden einer Abdeckschicht (26) auf einer Oberseite der Abstandshalter (18), der Schicht aus einem Zwischenschicht-Dielektrikum (16), des Metalls (22) mit einer Austrittsarbeit und des Leitungsmetalls (24) für das Gate.

公开(公告)号：CA2614373A1

公开(公告)日：2007-01-18

申请号：CA2614373

申请日：2005-12-07

Applicant: IBM

Inventor： GAIDIS MICHAEL C ,  KANAKASABAPATHY SIVANANDA K ,  O'SULLIVAN EUGENE J

IPC: H01L21/302 ,  H01L21/461

Abstract: Techniques for magnetic device fabrication are provided. In one aspect, a method of patterning at least one, e.g., nonvolatile, material comprises the following steps. A hard mask structure is formed on at least one surface of the material to be patterned. The hard mask structure is configured to have a base, proximate to the material, and a top opposite the base. The base has one or more lateral dimensions that are greater than one or more lateral dimensions of the top of the hard mask structure, such that at least one portion of the base extends out laterally a substantial distance beyond the top. The top of the hard mask structure is at a greater vertical distance from the material being etched than the base. The material is etched.