公开(公告)号：EP1994563A4

公开(公告)日：2011-06-22

申请号：EP07797080

申请日：2007-01-16

Applicant: IBM

Inventor： CLEVENGER LAWRENCE A ,  DALTON TIMOTHY J ,  HSU LOUIS C ,  RADENS CARL ,  WONG KWONG-HON ,  YANG CHIH-CHAO

IPC: H01L27/01 ,  H01L21/8234

CPC classification number: H01L27/1203 ,  H01L21/28114 ,  H01L21/823456 ,  H01L21/84 ,  H01L29/42376 ,  H01L2924/0002 ,  H01L2924/00

公开(公告)号：JP2010206212A

公开(公告)日：2010-09-16

申请号：JP2010098911

申请日：2010-04-22

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： ANDRICACOS PANAYOTIS CONSTANTINOU ,  DELIGIANNI HARIKLIA ,  DUKOVIC JOHN OWEN ,  HORKANS WILMA J ,  UZOH CYPRIAN EMEKA ,  WONG KWONG-HON ,  HU CHAO-KUN ,  EDELSTEIN DANIEL CHARLES ,  RODBELL KENNETH PARKER ,  HURD JEFFREY LOUIS

IPC: H01L21/3205 ,  C25D3/38 ,  C25D7/12 ,  H01L21/288 ,  H01L21/768 ,  H01L23/52

Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing a submicron interconnection structure for an integrated circuit. SOLUTION: A seamless conductor without void can be obtained by electroplating Cu from a bath, usually employed for adhering Cu metal which comprises an adhering agent and which is flat, glossy, ductile and low stress. The capability of this method which permits super feature fill up without leaving void or seam is unique and more excellent than any other adhering methods. The resistance of electromigration having a structure utilizing Cu electroplated by this method is superior to the resistance of electromigration having a structure manufactured by employing Cu adhered in an AlCu structure or by a method except electroplating. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供一种用于集成电路的亚微米互连结构的制造方法。 解决方案：通过从浴中电镀Cu，通常用于粘附包含粘合剂的Cu金属并且是平坦的，有光泽的，延性的和低应力的，可以获得无空隙的无缝导体。 这种允许超级特征填充而不留下空隙或接缝的方法的能力是独特的，比任何其他粘合方法更优异。 具有利用通过该方法电镀的Cu的结构的电迁移电阻优于具有通过使用以AlCu结构附着的Cu制造的结构的电迁移的电阻或通过除电镀之外的方法。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2009065207A

公开(公告)日：2009-03-26

申请号：JP2008314245

申请日：2008-12-10

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： ANDRICACOS PANAYOTIS CONSTANTI ,  DELIGIANNI HARIKLIA ,  DUKOVIC JOHN OWEN ,  HORKANS WILMA J ,  UZOH CYPRIAN EMEKA ,  WONG KWONG-HON ,  HU CHAO-KUN ,  EDELSTEIN DANIEL CHARLES ,  RODBELL KENNETH PARKER ,  HURD JEFFREY LOUIS

IPC: H01L21/288 ,  C25D3/38 ,  C25D7/12 ,  H01L21/28 ,  H01L21/3205 ,  H01L23/52

Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing submicron interconnection structures for integrated circuits.
SOLUTION: A void-less and seamless conductor can be obtained by electro-plating copper (Cu) in an ordinary additive-containing bath used to plate flat, glossy, ductile, and low stress copper metal. This method capable of super-filling features without leaving voids or seams has a unique capability and is superior to any other methods. The electromigration resistance of a structure utilizing Cu electroplated by this method is superior to the electromigration resistance of an AlCu structure or a structure manufactured using copper deposited by any other method than electroplating.
COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供一种制造用于集成电路的亚微米互连结构的方法。

解决方案：通过在用于平板，光泽，延性和低应力铜金属的普通添加剂浴中电镀铜（Cu），可以获得无孔隙和无缝导体。 这种能够超级填充特征而不留下空隙或接缝的方法具有独特的能力并且优于任何其它方法。 利用这种方法电镀Cu的结构的电迁移电阻优于AlCu结构的电迁移电阻或使用除电镀之外的任何其它方法沉积的铜制成的结构。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2005136433A

公开(公告)日：2005-05-26

申请号：JP2004362864

申请日：2004-12-15

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： ANDRICACOS PANAYOTIS CONSTANTI ,  DELIGIANNI HARIKLIA ,  DUKOVIC JOHN OWEN ,  HORKANS WILMA J ,  UZOH CYPRIAN EMEKA ,  WONG KWONG-HON ,  HU CHAO-KUN ,  EDELSTEIN DANIEL CHARLES ,  RODBELL KENNETH PARKER ,  HURD JEFFREY LOUIS

IPC: C25D3/38 ,  C25D7/12 ,  H01L21/288 ,  H01L21/3205 ,  H01L23/52

Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing a submicron interconnection structure for an integrated circuit.
SOLUTION: By electroplating Cu in a bath which includes an additive and is usually used for adhering Cu metal which is flat and glossy and has high ductility and low stress, seamless semiconductor without void is obtained. This method allows a feature to be super-filled up without leaving void or seam. The resistance of electromigration with the structure utilizing Cu which is electroplated by this method is more excellent than the resistance of electromigration with the structure manufactured using Cu which is adhered by methods other than AlCu structure or electroplating.
COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种用于集成电路的亚微米互连结构的制造方法。 解决方案：通过在包含添加剂的浴中电镀Cu，通常用于粘附平坦且光滑且具有高延展性和低应力的Cu金属，获得无空隙的无缝半导体。 这种方法允许特征被超填充而不留下空隙或接缝。 利用该方法电镀Cu结构的电迁移电阻比使用除AlCu结构或电镀以外的方法附着的Cu制造的结构的电迁移电阻更好。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：WO2007127503A8

公开(公告)日：2008-09-04

申请号：PCT/US2007060564

申请日：2007-01-16

Applicant: IBM

Inventor： CLEVENGER LAWRENCE A ,  DALTON TIMOTHY J ,  HSU LOUIS C ,  RADENS CARL ,  WONG KWONG-HON ,  YANG CHIH-CHAO

IPC: H01L27/12 ,  H01L27/01 ,  H01L31/0392

CPC classification number: H01L27/1203 ,  H01L21/28114 ,  H01L21/823456 ,  H01L21/84 ,  H01L29/42376 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A transistor device and method of forming the same comprises a substrate; a first gate electrode over the substrate; a second gate electrode over the substrate; and a landing pad comprising a pair of flanged ends overlapping the second gate electrode, wherein the structure of the second gate electrode is discontinuous with the structure of the landing pad.

Abstract translation: 晶体管器件及其形成方法包括：衬底; 衬底上的第一栅电极; 在衬底上的第二栅电极; 以及包括与第二栅电极重叠的一对凸缘端的着陆焊盘，其中第二栅电极的结构与着陆焊盘的结构不连续。