SEMICONDUCTOR WAFER POLISHING DEVICE AND METHOD

    公开(公告)号:JPH10296618A

    公开(公告)日:1998-11-10

    申请号:JP10900898

    申请日:1998-04-20

    Applicant: IBM

    Abstract: PROBLEM TO BE SOLVED: To provide a machine and method to chemically and mechanically polish(CMP) semiconductor wafers. SOLUTION: At least one polishing device is provided with a polishing pad polishing face, which can be rotated and is perpendicularly oriented, and a slurry supply mechanism 20. A semiconductor wafer is provided so that it is received by a wafer carrier 40 from a holder/cassette and can be held contacting the polishing area 2 of the polishing pad in parallel with each other. A conditioning module 30 securing a spring 31 can be provided in the area next to the polishing area 2 to clean/condition the polishing pad. In this case, slurry drops through an exit 26 from a slurry conduit 24 and uniformly expanded by a squeeze 22. In such constitution. The floor space for machine installation is substantially reduced, as a result, the prevention of sticking of pollutants to the polishing machine can be promoted.

    SLURRY HAVING HIGH SELECTIVITY AND CHEMICAL-MECHANICAL POLISHING OF COMPOSITE MATERIAL SUBSTRATE

    公开(公告)号:JPH11330025A

    公开(公告)日:1999-11-30

    申请号:JP5812699

    申请日:1999-03-05

    Applicant: IBM

    Abstract: PROBLEM TO BE SOLVED: To enable a first film to align when a second film on a plane by adding triethanolamine to a polishing slurry, which reacts with the first film and with the second film of a second material under a predetermined part of the first film, to increase the reactivity with respect to the first film and by exposing the second film by interrupting the polishing, when the first film is removed completely. SOLUTION: In order to control the polishing speed of the material of a composite material substrate, the substrate having a first film formed of a first material and a second film formed of a second material lying under a predetermined part of the first film is chemical-mechanical polished using a slurry reacting, with the first and second films so as to remove the most part of the first film. Then, adequate amount of triethanolamine is added to the slurry for increasing the reactivity of the slurry with the first film and chemical- mechanical polishing is carried out. Thereupon, the residual part of the first film is removed, and if the polishing is interrupted when the first film on the part under which second film lies is removed completely, a specified part is exposed so that the first film is aligned with the second film on a plane.

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