公开(公告)号：DE102004002908A1

公开(公告)日：2005-09-01

申请号：DE102004002908

申请日：2004-01-20

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHMIDT GERHARD ,  ZELSACHER RUDOLF ,  BAER MICHAEL ,  WERNER WOLFGANG ,  WINKLER BERNHARD

IPC: B81B3/00 ,  B81B7/00 ,  B81C1/00 ,  G01C19/56 ,  H01L23/00 ,  H01L23/29 ,  H01L23/58 ,  H01L29/84

Abstract: A semiconductor component ( 1 ) includes a substrate, an active area ( 2 ), formed in/on the substrate, and a passivation layer ( 5 ) which is provided at least above part of the active area ( 2 ). The passivation layer ( 5 ) at least partially comprises amorphous, hydrogen-doped carbon. The provision of a passivation layer of this type allows the semiconductor component ( 1 ) to be effectively protected against environmental influences.

公开(公告)号：DE102004002908B4

公开(公告)日：2008-01-24

申请号：DE102004002908

申请日：2004-01-20

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHMIDT GERHARD ,  ZELSACHER RUDOLF ,  BAER MICHAEL ,  WERNER WOLFGANG ,  WINKLER BERNHARD

IPC: H01L23/29 ,  B81B3/00 ,  B81B7/00 ,  B81C1/00 ,  G01C19/56 ,  H01L23/00 ,  H01L23/58 ,  H01L29/84

Abstract: A semiconductor component ( 1 ) includes a substrate, an active area ( 2 ), formed in/on the substrate, and a passivation layer ( 5 ) which is provided at least above part of the active area ( 2 ). The passivation layer ( 5 ) at least partially comprises amorphous, hydrogen-doped carbon. The provision of a passivation layer of this type allows the semiconductor component ( 1 ) to be effectively protected against environmental influences.