公开(公告)号：DE102005002675A1

公开(公告)日：2006-09-21

申请号：DE102005002675

申请日：2005-01-20

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WELLHAUSEN UWE ,  HOLLATZ MARK ,  DAS ARABINDA ,  KLIPP ANDREAS ,  SPERLICH HANS-PETER ,  BIRNER ALBERT ,  HEIDEMEYER HENRY

IPC: H01L21/314 ,  H01L21/762

Abstract: The method involves pretreating a semiconductor structure before superimposing the spin-on layer to obtain a plane surface of the spin-on layer. A liner layer is superimposed on a semiconductor structure before the superimposition of the spin-on-layer. The semiconductor structure supports a planar superimposition of the spin-on layer on it. An oxide layer is superimposed as a liner layer, whose thickness is greater than 2.0 mm. An independent claim is also included for a semiconductor structure, in particular a semiconductor wafer with a substrate.

公开(公告)号：DE102005002675B4

公开(公告)日：2007-02-22

申请号：DE102005002675

申请日：2005-01-20

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WELLHAUSEN UWE ,  HOLLATZ MARK ,  DAS ARABINDA ,  KLIPP ANDREAS ,  SPERLICH HANS-PETER ,  BIRNER ALBERT ,  HEIDEMEYER HENRY

IPC: H01L21/314 ,  H01L21/762

Abstract: The method involves pretreating a semiconductor structure before superimposing the spin-on layer to obtain a plane surface of the spin-on layer. A liner layer is superimposed on a semiconductor structure before the superimposition of the spin-on-layer. The semiconductor structure supports a planar superimposition of the spin-on layer on it. An oxide layer is superimposed as a liner layer, whose thickness is greater than 2.0 mm. An independent claim is also included for a semiconductor structure, in particular a semiconductor wafer with a substrate.