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    RESIST SYSTEM, USE OF A RESIST SYSTEM AND LITHOGRAPHY METHOD FOR THE PRODUCTION OF SEMICONDUCTOR ELEMENTS
    4.
    发明申请
    RESIST SYSTEM, USE OF A RESIST SYSTEM AND LITHOGRAPHY METHOD FOR THE PRODUCTION OF SEMICONDUCTOR ELEMENTS 审中-公开
    抗蚀系统使用抗蚀剂系统和光刻工艺用于生产半导体器件

    公开(公告)号：WO2004031858A3

    公开(公告)日：2004-07-01

    申请号：PCT/DE0303178

    申请日：2003-09-19

    Applicant: INFINEON TECHNOLOGIES AG ,  DOMKE WOLF-DIETER ,  KIRCH OLIVER ,  KRAGLER KARL ,  LOWACK KLAUS

    Inventor： DOMKE WOLF-DIETER ,  KIRCH OLIVER ,  KRAGLER KARL ,  LOWACK KLAUS

    IPC: G03F7/004 ,  G03F7/039 ,  G03F7/20

    CPC classification number: G03F7/2004 ,  G03F7/0045 ,  G03F7/0392

    Abstract: The invention relates to a resist system for lithography methods for the production of semiconductor components at wavelengths of 0.1 -150 nm, characterised by at least one polymer or copolymer comprising at least one acid-labile group. The invention also relates to the use of a resist system and a lithography method, whereby it is possible to obtain high sensitivity, especially in the EUV range, and no limitation of the process window occurs by undesirable cross-linking in the resist system, even at high doses of exposure.

    Abstract translation: 本发明涉及的抗蚀剂系统，用于光刻工艺用于生产半导体器件中的在0.1至150纳米范围内的波长，其特征在于由至少一种聚合物或共聚物具有至少一个酸不稳定基团。 此外，本发明涉及一种使用该抗蚀剂系统和光刻工艺。 这使得有可能特别是在可用的EUV范围内的高灵敏度来提供，在相同的时间，但没有进入工艺窗口的限制，即使在高曝光剂量由不希望的交联在抗蚀剂系统。

    8.
    发明专利
    未知

    公开(公告)号：DE50009379D1

    公开(公告)日：2005-03-03

    申请号：DE50009379

    申请日：2000-09-07

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： SEZI RECAI ,  SCHMID GUENTER ,  LOWACK KLAUS ,  RADLIK WOLFGANG ,  HAUSSMANN JOERG

    IPC: C23C18/20 ,  C23C18/16 ,  C23C18/30 ,  H01L21/288 ,  H05K3/18

    Abstract: A method for metallizing dielectrics includes applying a photosensitive dielectric to a substrate. The dielectric is then exposed to light through a mask, is seeded with a metal and is subjected to a temperature treatment. Afterwards, the dielectric is chemically metallized. Alternatively, the dielectric can be first be seeded with a metal after being applied to the substrate, and can then be exposed to light through a mask. Afterwards, excess seeding material is removed and the dielectric is chemically metallized.

    10.
    发明专利
    未知

    公开(公告)号：DE10228770A1

    公开(公告)日：2004-02-12

    申请号：DE10228770

    申请日：2002-06-27

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： SEZI RECAI ,  WALTER ANDREAS ,  MALTENBERGER ANNA ,  LOWACK KLAUS

    IPC: C08G73/02 ,  C08G69/26 ,  C08G69/32 ,  C08G73/22 ,  H01B3/30 ,  H01B3/44 ,  H01L21/312 ,  H01L21/768 ,  H01L23/522 ,  C08G73/10 ,  C08L79/06 ,  H01L23/532 ,  C09D5/24

    Abstract: New poly-o-hydroxyamides containing divalent polynuclear (hetero)aromatic residues in the polymer chain. Poly-o-hydroxyamides of formula (I). Y2 = -(Phe-O)n-E-(O-Phe)n-; Phe = phenylene; Y1, Y3 = as for Y2, or various optionally substituted (hetero)arylene groups, e.g. phenylene, naphthylene, pyrazinediyl, furandiyl (21 groups listed); Z1-Z3 = various tetravalent (hetero)aromatic groups, e.g. benzene-1,2,4,5-tetrayl, furan-2,3,4,5-tetrayl, fluorene-2,3,6,7-tetrayl (10 groups listed); A = (a) H, -CO(CH2)gCH3, -COCH=CH2, -CO-aryl etc. (14 groups listed) (if a = 0 and/or d = 1), or (b) OH, amino, -OCH2CH=CH2, aryloxy etc. (9 groups listed (if a = 1 and/or d = 0); E = various divalent polynuclear (hetero)aromatic groups, e.g. 1,1'-binaphthylene, pyrene-diyl, -Phe-CPh2-Phe- (10 groups listed); Ph = phenyl; R1 = H, -(CH2)fCH3, -(CH2)f-Ph, -COO(CH2)fCH3 or -COO(CH2)fPh; a, d, n = 0 or 1; b = 1-200; c = 0-200. Full definitions are given in the DEFINITIONS (Full Definitions) field. Independent claims are also included for the following: (1) Polybenzoxazoles (PBO) obtained from (I); (2) Method (M1) for the production of (I) by reacting monomers of formula H2N-Z(OR1)2-NH2 (II) with dicarboxylic acids or activated derivatives thereof of formula L-CO-Y-CO-L (III); (3) Method (M2) for the production of PBO by heating (I); (4) Electronic components (EC) with a dielectric containing PBO as above; (5) Method (M3) for the production of EC by coating a substrate with a solution of (I), evaporating the solvent, heating the resulting film to form PBO, structuring the PBO film to form a resist with trenches and contact holes, depositing a conductive material on the relief so as to fill the holes etc. and then removing excess conductive material; and (6) Method (M4) for the production of EC by coating a solution of (I) onto a substrate with trenches and contact holes between metallic surface structures, evaporating the solvent so that the trenches and holes are filled with (I) and then heating to form PBO. Z = Z1, Z2 or Z3; Y = Y1, Y2 or Y3; and L = OH or an activating group.

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