公开(公告)号：DE19944740A1

公开(公告)日：2001-04-19

申请号：DE19944740

申请日：1999-09-17

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KIRCHHOFF MARKUS ,  SPERLICH HANS-PETER ,  SCHILLING UWE ,  GABRIC ZVONIMIR ,  SPINDLER OSWALD ,  WEGE STEPHAN ,  GLAWISCHNIG HANS

IPC: H01L21/316 ,  H01L21/318 ,  H01L21/762 ,  H01L21/768

Abstract: Shrinkage-free filling of trenches in integrated circuits comprises applying a layer of selectively growing material on a growth-promoting layer and a growth-halting layer (2) so bumps (3) are formed which are covered laterally by the growth-halting layer before applying the layer of selectively growing material. After the growth-halting layer is applied, the growth-promoting layer is produced on surfaces parallel to the substrate (4) by an isotropic treatment and then removed on the surfaces that are parallel to the bumps. Preferred Features: The growth-promoting layer is removed on the parallel surfaces on the bumps by chemical-mechanical polishing. The growth-promoting layer is produced by an oxygen plasma.

公开(公告)号：DE19944740C2

公开(公告)日：2001-10-25

申请号：DE19944740

申请日：1999-09-17

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KIRCHHOFF MARKUS ,  SPERLICH HANS-PETER ,  SCHILLING UWE ,  GABRIC ZVONIMIR ,  SPINDLER OSWALD ,  WEGE STEPHAN ,  GLAWISCHNIG HANS

IPC: H01L21/316 ,  H01L21/318 ,  H01L21/762 ,  H01L21/314 ,  H01L21/768

Abstract: A method for the shrink-hole-free filling of trenches in semiconductor circuits which utilizes selective growth of a layer to be applied is described. In the method, a layer of a selective growing material is applied simultaneously to a growth-promoting layer and to a growth-inhibiting layer. Wherein raised portions which, before the layer of selective growing material is applied, are covered by the growth-inhibiting layer at least on their sides. After the growth-inhibiting layer has been applied, the growth-promoting layer is generated by anisotropic treatment on surfaces parallel to the substrate on and between the raised portions and the layer is then removed again on surfaces parallel to the substrate on the raised portions. The method makes it possible to produce in a particularly simple manner a pattern on the raised portions of which are covered by the growth-inhibiting layer on their sides and on their top whereas the bottom of trenches is covered with a growth-promoting layer.