公开(公告)号：US6274410B2

公开(公告)日：2001-08-14

申请号：US72906800

申请日：2000-12-04

Applicant: INFINEON TECHNOLOGIES AG

Inventor： GOEBEL HOLGER ,  KRAUSE GUNNAR

IPC: H01L21/82 ,  G11C17/14 ,  H01L27/10

CPC classification number: G11C17/14

Abstract: A method of programming a semiconductor memory includes forming a multiplicity of fuse links in at least two mutually parallel planes in a semiconductor body, and separating the fuse links from one another with an electrical insulator. It also includes irradiating a selected fuse link with at least two laser beams and melting the selected fuse link by crossing the laser beams at the selected fuse link.

Abstract translation: 一种编程半导体存储器的方法包括在半导体本体中的至少两个相互平行的平面中形成多个熔丝链，并用电绝缘体彼此分离熔丝链。 它还包括用至少两个激光束照射所选择的熔丝链，并通过在所选择的熔丝链路处穿过激光束来熔化所选择的熔丝链。

公开(公告)号：WO0250842A3

公开(公告)日：2002-12-27

申请号：PCT/DE0104785

申请日：2001-12-19

Applicant: INFINEON TECHNOLOGIES AG ,  GOEBEL HOLGER ,  HOENIGSCHMID HEINZ ,  HOENLEIN WOLFGANG ,  HANEDER THOMAS ,  ULLMANN MARC

Inventor： GOEBEL HOLGER ,  HOENIGSCHMID HEINZ ,  HOENLEIN WOLFGANG ,  HANEDER THOMAS ,  ULLMANN MARC

IPC: G11C11/22 ,  H01L21/8246 ,  H01L21/8247 ,  H01L27/105 ,  H01L29/788 ,  H01L29/792

CPC classification number: G11C11/22 ,  Y10S977/943

Abstract: The status is read out from or stored in the ferroelectrical transistor. During the reading out or storing of the status, at least one further ferroelectrical transistor in the memory matrix is controlled such as to be operated in the depletion region thereof.

Abstract translation: 该状态从铁电晶体管读出或存储在铁电晶体管中。 在读取或存储状态期间，存储器矩阵中的至少一个另外的铁电晶体管被驱动，使得其在其耗尽区中操作。

公开(公告)号：DE19737611C2

公开(公告)日：2002-09-26

申请号：DE19737611

申请日：1997-08-28

Applicant: INFINEON TECHNOLOGIES AG

Inventor： GOEBEL HOLGER ,  KRAUSE GUNNAR

IPC: H01L21/82 ,  G11C17/14 ,  H01L27/10 ,  G11C17/16

Abstract: The fuse device has a number of fuses (1), e.g. of polycrystalline silicon, applied to a semiconductor body, each programmed for providing or interrupting an electrical connection in response to a respective energy surge. The fuses are arranged on the semiconductor body in at least two planes (2,3), which are separated from one another via a silicon dioxide insulation layer.

公开(公告)号：DE10064031A1

公开(公告)日：2002-07-18

申请号：DE10064031

申请日：2000-12-21

Applicant: INFINEON TECHNOLOGIES AG

Inventor： ULLMANN MARC ,  HANEDER THOMAS ,  HOENIGSCHMID HEINZ ,  GOEBEL HOLGER ,  HOENLEIN WOLFGANG

IPC: G11C11/22 ,  H01L21/8246 ,  H01L21/8247 ,  H01L27/105 ,  H01L29/788 ,  H01L29/792

Abstract: The state is read out from the ferroelectric transistor or stored in the ferroelectric transistor. During the read-out or storage of the state, at least one further ferroelectric transistor in the memory matrix is driven in such a way that it is operated in its depletion region.

公开(公告)号：DE50104250D1

公开(公告)日：2004-11-25

申请号：DE50104250

申请日：2001-12-19

Applicant: INFINEON TECHNOLOGIES AG

Inventor： GOEBEL HOLGER ,  HOENIGSCHMID HEINZ ,  HOENLEIN WOLFGANG ,  HANEDER THOMAS ,  ULLMANN MARC

IPC: G11C11/22 ,  H01L21/8246 ,  H01L21/8247 ,  H01L27/105 ,  H01L29/788 ,  H01L29/792

Abstract: The state is read out from the ferroelectric transistor or stored in the ferroelectric transistor. During the read-out or storage of the state, at least one further ferroelectric transistor in the memory matrix is driven in such a way that it is operated in its depletion region.