公开(公告)号：DE10346850A1

公开(公告)日：2005-05-19

申请号：DE10346850

申请日：2003-10-09

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MANTZ ULRICH ,  WEIDNER PETER ,  WIENHOLD RALPH ,  GUITTET PIERRE-YVES

IPC: G01B11/22 ,  G01B11/30 ,  G01N21/84 ,  G01B11/24 ,  B82B3/00 ,  H01L21/66 ,  G01N21/88

Abstract: The method involves applying electromagnetic scanning radiation to the layer with the recess, with a wavelength larger than the lateral dimension of the recess. The response radiation is received and the interaction of the radiation with the layer is used to determine characteristic data for derivation of the dimensions or volume of the recess and the properties of material in the recess. An independent claim is included for a method of manufacturing a component with a recess.

公开(公告)号：DE10342775B4

公开(公告)日：2006-03-23

申请号：DE10342775

申请日：2003-09-16

Applicant: INFINEON TECHNOLOGIES AG

Inventor： DRUMMER HEIKE ,  STAECKER JENS ,  FROEHLICH HANS-GEORG ,  GRUSS STEFAN ,  WIENHOLD RALPH ,  GRAF WERNER

IPC: H01L23/544 ,  G03F9/00 ,  H01L21/66 ,  H01L21/8242

公开(公告)号：DE10346850B4

公开(公告)日：2005-12-15

申请号：DE10346850

申请日：2003-10-09

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MANTZ ULRICH ,  WEIDNER PETER ,  WIENHOLD RALPH ,  GUITTET PIERRE-YVES

IPC: G01B11/22 ,  G01B11/30 ,  G01N21/84 ,  G01B11/24 ,  B82B3/00 ,  H01L21/66 ,  G01N21/88

Abstract: The method involves applying electromagnetic scanning radiation to the layer with the recess, with a wavelength larger than the lateral dimension of the recess. The response radiation is received and the interaction of the radiation with the layer is used to determine characteristic data for derivation of the dimensions or volume of the recess and the properties of material in the recess. An independent claim is included for a method of manufacturing a component with a recess.

公开(公告)号：DE10342775A1

公开(公告)日：2005-04-28

申请号：DE10342775

申请日：2003-09-16

Applicant: INFINEON TECHNOLOGIES AG

Inventor： DRUMMER HEIKE ,  STAECKER JENS ,  FROEHLICH HANS-GEORG ,  GRUSS STEFAN ,  WIENHOLD RALPH ,  GRAF WERNER

IPC: G03F9/00 ,  H01L21/66 ,  H01L21/8242 ,  H01L23/544

Abstract: When forming the main structure, at least two further structural components (12b) are formed, spaced apart on the wafer (10) substrate (5) surface. They are alignment marks. A trench (26) is formed to join them. Their (12b) spacing, and the trench depth, exceed the layer (14) thickness. In this way, a depression (27) with sidewalls (28) remains in the planarized surface (32) of the layer (14). During alignment of the wafer, the sidewalls (28) are detected. An independent claim is included for the corresponding mark.