公开(公告)号：DE60106011T2

公开(公告)日：2006-03-02

申请号：DE60106011

申请日：2001-07-23

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHNEIDER TORSTEN ,  SPULER BRUNO ,  DRABE CHRISTIAN ,  HAENSEL JANA ,  KRASEMANN ANKE ,  LORENZ BARBARA ,  MORGENSTERN DR

IPC: H01L21/311 ,  H01L21/334 ,  H01L21/8242 ,  H01L27/108 ,  H01L29/94

公开(公告)号：DE10242629B4

公开(公告)日：2006-12-28

申请号：DE10242629

申请日：2002-09-13

Applicant: INFINEON TECHNOLOGIES AG

Inventor： RUDOLPH MATTHIAS ,  HAENSEL JANA

IPC: H01L21/3065 ,  H01L21/321 ,  H01L21/3213 ,  H01L21/762

Abstract: Production of a semiconductor structure comprises preparing a semiconductor structure (1) having a trench (2), filling the trench with a filling (10) so that the filling protrudes over a surface (OF) of the semiconductor structure by a first height and fills the trench and the periphery of the trench, planarizing the filling in a first etching step, and sinking the filling in the trench in a second etching step to a prescribed depth. The same plasma power and etching agent composition are used for both etching steps.

公开(公告)号：DE60106011D1

公开(公告)日：2004-11-04

申请号：DE60106011

申请日：2001-07-23

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHNEIDER TORSTEN ,  SPULER BRUNO ,  DRABE CHRISTIAN ,  HAENSEL JANA ,  KRASEMANN ANKE ,  LORENZ BARBARA ,  MORGENSTERN DR

IPC: H01L21/311 ,  H01L21/8242 ,  H01L21/334 ,  H01L27/108 ,  H01L29/94

公开(公告)号：DE10242629A1

公开(公告)日：2004-04-01

申请号：DE10242629

申请日：2002-09-13

Applicant: INFINEON TECHNOLOGIES AG

Inventor： RUDOLPH MATTHIAS ,  HAENSEL JANA

IPC: H01L21/321 ,  H01L21/3213 ,  H01L21/762 ,  H01L21/3065

Abstract: Production of a semiconductor structure comprises preparing a semiconductor structure (1) having a trench (2), filling the trench with a filling (10) so that the filling protrudes over a surface (OF) of the semiconductor structure by a first height and fills the trench and the periphery of the trench, planarizing the filling in a first etching step, and sinking the filling in the trench in a second etching step to a prescribed depth. The same plasma power and etching agent composition are used for both etching steps.