公开(公告)号：JP2005252278A

公开(公告)日：2005-09-15

申请号：JP2005095685

申请日：2005-03-29

Applicant: Infineon Technologies Ag ,  インフィネオン テクノロジーズ アクチエンゲゼルシャフト

Inventor： HAINZ OSWALD ,  PAULUS STEFAN ,  LEHNER RUDOLF ,  AUBURGER ALBERT ,  LANG DIETMAN ,  PETZ MARTIN ,  WEBER MICHAEL

IPC: H01L23/12 ,  H01L21/56 ,  H01L21/68 ,  H01L21/98 ,  H01L23/31 ,  H01L23/482 ,  H01L25/04 ,  H01L25/18

CPC classification number: H01L21/568 ,  H01L23/3107 ,  H01L23/482 ,  H01L24/48 ,  H01L24/49 ,  H01L25/0655 ,  H01L25/50 ,  H01L2224/05599 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/48464 ,  H01L2224/48465 ,  H01L2224/48475 ,  H01L2224/4848 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/85001 ,  H01L2224/85051 ,  H01L2224/854 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/01046 ,  H01L2924/01057 ,  H01L2924/01068 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/45099

Abstract: PROBLEM TO BE SOLVED: To provide an inexpensive packaging method having a simple production process for realizing short signal path and a compact structure. SOLUTION: The housing includes a primary principal plane and a secondary principal plane that counters the primary principal plane, with most of them surrounding at least one semiconductor chip. The semiconductor chip includes a first metallization on the first principal plane side. The second principal planar side of the semiconductor chip reaches the second principal plane of the semiconductor structure element. The first metallizing of the semiconductor chip is also surrounded by the housing through a conductive material and connected with the contact section that reaches the second principal plane. Furthermore, the semiconductor chip includes a secondary metallization to pass signals to the second principal plane side. COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 解决的问题：提供一种廉价的包装方法，其具有用于实现短信号路径和紧凑结构的简单制造工艺。 解决方案：壳体包括主要主平面和与主要主平面对准的次要主平面，其大部分围绕至少一个半导体芯片。 半导体芯片包括在第一主平面侧上的第一金属化。 半导体芯片的第二主平面侧到达半导体结构元件的第二主平面。 半导体芯片的第一金属化也被壳体通过导电材料包围并与到达第二主平面的接触部分连接。 此外，半导体芯片包括用于将信号传递到第二主平面侧的二次金属化。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2002124597A

公开(公告)日：2002-04-26

申请号：JP2001287531

申请日：2001-09-20

Applicant: INFINEON TECHNOLOGIES AG

Inventor： PAULUS STEFAN ,  AUBURGER ALBERT ,  HAINZ OSWALD ,  LANG DIETMAR ,  PETZ MARTIN ,  WEBER MICHAEL

IPC: H01L23/12 ,  H01L21/48 ,  H01L21/56 ,  H01L23/31

Abstract: PROBLEM TO BE SOLVED: To provide a component, which can be produced by a known production method as easily as possible, composed of a little external contacts. SOLUTION: A contact pad 11 of at least one integrated circuit 1 is connected with a conductive projection 2 directly attached on a basic substrate.

公开(公告)号：DE10047135A1

公开(公告)日：2002-04-25

申请号：DE10047135

申请日：2000-09-22

Applicant: INFINEON TECHNOLOGIES AG

Inventor： PAULUS STEFAN ,  AUBURGER ALBERT ,  HAINZ OSWALD ,  LANG DIETMAR ,  PETZ MARTIN ,  WEBER MICHAEL

IPC: H01L23/12 ,  H01L21/48 ,  H01L21/56 ,  H01L23/31 ,  H01L21/50 ,  H01L21/58 ,  H01L21/60

Abstract: Production of a component comprises preparing an integrated circuit (1) having an active main side (5) with contact pads (11) connected to electrically conducting humps (2); applying the circuit onto a substrate, the main side of the circuit facing the substrate; enclosing the circuit using a cast mass (3); and removing parts of the substrate from the circuit. Preferred Features: The step of applying the circuit to the substrate comprises connecting the humps to the substrate by thermal compressing or alloying. The substrate is removed by etching, delaminating, grinding or sawing.

公开(公告)号：DE10047135B4

公开(公告)日：2006-08-24

申请号：DE10047135

申请日：2000-09-22

Applicant: INFINEON TECHNOLOGIES AG

Inventor： PAULUS STEFAN ,  AUBURGER ALBERT ,  HAINZ OSWALD ,  LANG DIETMAR ,  PETZ MARTIN ,  WEBER MICHAEL

IPC: H01L21/50 ,  H01L23/12 ,  H01L21/48 ,  H01L21/56 ,  H01L21/58 ,  H01L21/60 ,  H01L23/31

公开(公告)号：DE10004410A1

公开(公告)日：2001-08-16

申请号：DE10004410

申请日：2000-02-02

Applicant: INFINEON TECHNOLOGIES AG

Inventor： PAULUS STEFAN ,  LEHNER RUDOLF ,  PETZ MARTIN ,  WEBER MICHAEL ,  AUBURGER ALBERT ,  HAINZ OSWALD ,  LANG DIETMAR

IPC: H01L23/12 ,  H01L21/56 ,  H01L21/68 ,  H01L21/98 ,  H01L23/31 ,  H01L23/482 ,  H01L25/04 ,  H01L25/18 ,  H01L23/48 ,  H01L21/60

Abstract: The semiconductor device has a package enclosing a semiconductor chip having a first metallisation (7) on a first main side (5) of the chip. The first metallisation is connected via electrical conductors (9) to contacts (10) extending to the second main surface (3) of the chip, and being enclosed in the package. A second metallisation is provided on the second main side (6) of the chip for carrying signals. The second metallisation and the contacts lie flush with the second main surface. The package is formed from a plastics compound.