公开(公告)号：DE10124736B4

公开(公告)日：2006-11-30

申请号：DE10124736

申请日：2001-05-21

Applicant: INFINEON TECHNOLOGIES AG

Inventor： ANKE INES ,  HASMANN JENS

IPC: G03F1/00 ,  G03F7/20 ,  G03F7/22

公开(公告)号：DE10124736A1

公开(公告)日：2002-12-05

申请号：DE10124736

申请日：2001-05-21

Applicant: INFINEON TECHNOLOGIES AG

Inventor： ANKE INES ,  HASMANN JENS

IPC: G03F1/00 ,  G03F7/20 ,  G03F1/14 ,  G03F7/22

Abstract: On the test reticle are located modules (1), contg. cells (3) in which are fitted lines of given width and spacing in different orientation. Preferably on both sides of mask middle line (M) of reticle are arranged middle line modules alternating in Z and Y direction. In the region of mask middle line the middle line modules extend in Y-direction over the entire width (5) of the scanner slit. The middle line modules of different orientation are point-symmetrically arranged w.r.t. reticle Center point (Z). Independent claims are included for method of proximity characterizing of scanner lenses.

公开(公告)号：DE102005034669A1

公开(公告)日：2007-02-08

申请号：DE102005034669

申请日：2005-07-25

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BAUCH LOTHAR ,  NASH EVA ,  MEYNE CHRISTIAN ,  KOESTLER WOLFRAM ,  HASMANN JENS

IPC: G03F1/00 ,  G03F1/36 ,  G03F7/00

Abstract: The mask has a pattern having two line-shaped structural components (10, 12) that are formed on the mask parallel to each other and form a gap (20). An arrangement of auxiliary structures has two auxiliary structures (14, 15) that are arranged in the gap parallel to the structural components. The arrangement of the auxiliary structures has space for the components, where the space is larger than another space having adjacent auxiliary structures. An independent claim is also included for a method of forming a pattern on mask for lithographic projection on a substrate.

公开(公告)号：DE10115281A1

公开(公告)日：2002-10-24

申请号：DE10115281

申请日：2001-03-28

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HASMANN JENS

IPC: G03F9/00 ,  G03F7/20 ,  H01L21/027

Abstract: The present invention provides a method for optimizing the overlay adjustment of two mask planes in a photolithographic process for the production of an integrated circuit having the following steps: provision of a substrate (S) with at least one first mask plane (ME), which has been patterned by exposure of a first mask using a first exposure device; orientation of a second mask (M), which is provided for the patterning of a second mask plane using a second exposure device, with respect to the first mask plane (ME); measurement of the overlay between the first mask plane (ME) and the second mask (M); analysis of the measured overlay taking account of error data (FAD, FXD, FBD, FYD) provided, in advance regarding errors (FA, FX, FB, FY) of the first and second masks and/or errors of the first and second exposure devices; carrying out of a correction of the orientation of the second mask (M) depending on the result of the analysis.