公开(公告)号：DE10133127C2

公开(公告)日：2003-06-26

申请号：DE10133127

申请日：2001-07-07

Applicant: INFINEON TECHNOLOGIES AG

Inventor： THIELE JOERG ,  ANKE INES ,  HAFFNER HENNING ,  SEMMLER ARMIN ,  FISCHER WERNER

IPC: G03F1/00 ,  G03F1/36 ,  G03F7/20

公开(公告)号：DE10124736B4

公开(公告)日：2006-11-30

申请号：DE10124736

申请日：2001-05-21

Applicant: INFINEON TECHNOLOGIES AG

Inventor： ANKE INES ,  HASMANN JENS

IPC: G03F1/00 ,  G03F7/20 ,  G03F7/22

公开(公告)号：DE10133127A1

公开(公告)日：2003-01-30

申请号：DE10133127

申请日：2001-07-07

Applicant: INFINEON TECHNOLOGIES AG

Inventor： THIELE JOERG ,  ANKE INES ,  HAFFNER HENNING ,  SEMMLER ARMIN ,  FISCHER WERNER

IPC: G03F1/00 ,  G03F1/36 ,  G03F7/20 ,  G03F9/00

Abstract: Process for calculating or manufacturing a mask (4) for producing a structured mask (6) or structure (2) of an integrated circuit comprises calculating or manufacturing the mask based on the structured mask and/or structure. A nominal value for at least one parameter is given for the structured mask and/or structure. The mask is calculated in such a way that the structured mask and/or structure contain a prescribed value region based on the parameter. The value region is directed asymmetrically to the nominal value of the parameter. A larger deviation of the value of the parameter from the nominal value is established in a small critical value direction for the quality or function of the structured mask and/or structure than in a critical value direction. Preferred Features: The mask is an exposure mask (4) which prepares an etching mask according to a photolithographic process.

公开(公告)号：DE102004027213A1

公开(公告)日：2005-09-15

申请号：DE102004027213

申请日：2004-06-03

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KOESTLER WOLFRAM ,  HAFFNER HENNING ,  HASSMANN JENS ,  ANKE INES

IPC: G03F7/20

Abstract: A twin-mask process is used to structure a substrate surface with a photo varnish coating by lithography, for an integrated electronic circuit. The coating is illuminated using the first mask with a light shrouding main structure (2) and an auxiliary structure (3). The main structure is formed on the varnish, with the auxiliary structure used to support the accuracy of the image. The varnish is again illuminated with the second mask with transparent zones (4), to form further structures on the varnish, without light falling on the main structure. The structures are positioned with given gaps (A,B,D) between them.

公开(公告)号：DE10124736A1

公开(公告)日：2002-12-05

申请号：DE10124736

申请日：2001-05-21

Applicant: INFINEON TECHNOLOGIES AG

Inventor： ANKE INES ,  HASMANN JENS

IPC: G03F1/00 ,  G03F7/20 ,  G03F1/14 ,  G03F7/22

Abstract: On the test reticle are located modules (1), contg. cells (3) in which are fitted lines of given width and spacing in different orientation. Preferably on both sides of mask middle line (M) of reticle are arranged middle line modules alternating in Z and Y direction. In the region of mask middle line the middle line modules extend in Y-direction over the entire width (5) of the scanner slit. The middle line modules of different orientation are point-symmetrically arranged w.r.t. reticle Center point (Z). Independent claims are included for method of proximity characterizing of scanner lenses.