公开(公告)号：DE102005003185B4

公开(公告)日：2006-11-02

申请号：DE102005003185

申请日：2005-01-19

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MOUKARA MOLELA ,  WINKLER THORSTEN ,  ZEILER KARSTEN ,  THIELE JOERG ,  KOESTLER WOLFRAM ,  HENNIG MARIO

IPC: G03F7/20

公开(公告)号：DE102005003184A1

公开(公告)日：2006-07-27

申请号：DE102005003184

申请日：2005-01-19

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MOUKARA MOLELA ,  WINKLER THORSTEN ,  ZEILER KARSTEN ,  KOEHLE RODERICK ,  THIELE JOERG ,  DETTMANN WOLFGANG ,  MITTERMEIER ARMELLE BENEDICTE ,  HENNIG MARIO ,  KOESTLER WOLFRAM

IPC: G03F1/00 ,  H01L21/8242

Abstract: The mask has a mask structure (30) in a chromium layer (3), a halftone layer (4) or a glass layer (5) of the tri-tone mask. The structure is surrounded by a strip of the halftone layer with a predetermined width. The strip creates a sharp contrast between a passage from the opaque layer to the glass layer. The width of the strip is constant and parallel to an edge of the structure and amounts between 50 and 200 nanometers. Independent claims are also included for the following: (A) a method of manufacture of a tri-tone mask (B) utilization of a tri-tone mask for the lithographic manufacture of a semiconductor device.

公开(公告)号：DE60104395D1

公开(公告)日：2004-08-26

申请号：DE60104395

申请日：2001-04-19

Applicant: INFINEON TECHNOLOGIES SC300 ,  INFINEON TECHNOLOGIES AG ,  MOTOROLA INC

Inventor： BREEDEN TERRY ,  TUCKER MIKE ,  OTTOW STEFAN ,  KOESTLER WOLFRAM ,  WISSEL DAN

IPC: H01L21/00 ,  H01L21/302 ,  H01L21/31 ,  H01L21/311 ,  H01L21/314 ,  H01L21/318 ,  H01L21/461 ,  H01L21/469

Abstract: The present invention relates to a recycling procedure for 300 mm nitride dummies which have been previously provided with a special stabilization layer made of silicon dioxide. The recycling procedure is essentially based on selectively wet etching the deposited silicon nitride with respect to the silicon dioxide stabilization layer, preferably with hot phosphoric acid at 160 DEG C. In particular, the present invention provides a method of handling a silicon wafer which is employed as a dummy wafer during a nitride deposition process, comprising the steps of depositing a silicon dioxide layer on the wafer surface, performing the nitride deposition process on the wafer to deposit silicon nitride or silicon oxinitride on the wafer surface until a predetermined layer thickness is reached, and etching the silicon nitride or silicon oxinitride layer selectively with respect to the silicon dioxide layer.

公开(公告)号：DE102005034669A1

公开(公告)日：2007-02-08

申请号：DE102005034669

申请日：2005-07-25

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BAUCH LOTHAR ,  NASH EVA ,  MEYNE CHRISTIAN ,  KOESTLER WOLFRAM ,  HASMANN JENS

IPC: G03F1/00 ,  G03F1/36 ,  G03F7/00

Abstract: The mask has a pattern having two line-shaped structural components (10, 12) that are formed on the mask parallel to each other and form a gap (20). An arrangement of auxiliary structures has two auxiliary structures (14, 15) that are arranged in the gap parallel to the structural components. The arrangement of the auxiliary structures has space for the components, where the space is larger than another space having adjacent auxiliary structures. An independent claim is also included for a method of forming a pattern on mask for lithographic projection on a substrate.

公开(公告)号：DE102005003183A1

公开(公告)日：2006-07-27

申请号：DE102005003183

申请日：2005-01-19

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MOUKARA MOLELA ,  WINKLER THORSTEN ,  ZEILER KARSTEN ,  THIELE JOERG ,  KOESTLER WOLFRAM ,  HENNIG MARIO

IPC: G03F7/20 ,  G03F7/00 ,  H01L21/28 ,  H01L21/768

Abstract: The method involves mapping a mask with a dipole blind on a wafer. Main semiconductor structures are manufactured by mapping the mask, where the structures are aligned perpendicular to a dipole axis and parallel to a mapping axis. Another mask with a mask structure is mapped with another blind on the wafer, where a compound semiconductor structure is manufactured on the wafer by interconnecting two of the main semiconductor structures. Independent claims are also included for the following: (A) a mapping system for manufacturing semiconductor structures (B) a mapping set with a dipole mask.

公开(公告)号：DE102005003185A1

公开(公告)日：2006-07-27

申请号：DE102005003185

申请日：2005-01-19

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MOUKARA MOLELA ,  WINKLER THORSTEN ,  ZEILER KARSTEN ,  THIELE JOERG ,  KOESTLER WOLFRAM ,  HENNIG MARIO

IPC: G03F7/20

Abstract: The system has a mask (25) for manufacturing of semiconductor structures on a wafer by transformation of the mask on the wafer. The mask has main mask structures (20) parallel to a transformation axis (x) that is running perpendicular to a dipole axis (y). A connection mask structure (23) that is transversely aligned in sections to the dipole axis is formed on the mask and connects the main mask structures with each other. Independent claims are also included for the following: (A) a method of manufacturing a semiconductor circuit with a transformation system (B) an application of a transformation system for manufacturing of a semiconductor circuit.

公开(公告)号：DE102004025203A1

公开(公告)日：2005-12-15

申请号：DE102004025203

申请日：2004-05-22

Applicant: INFINEON TECHNOLOGIES AG

Inventor： VOELKEL LARS ,  PFORR RAINER ,  LAESSIG ANTJE ,  ELIAN KLAUS ,  HENNIG MARIO ,  NOELSCHER CHRISTOPH ,  KOESTLER WOLFRAM

IPC: G03F7/039 ,  G03F7/16 ,  G03F7/26 ,  G03F7/38

Abstract: Photolithographic production of a photomask by the standard steps of coating the substrate with a photolacquer, heating for solvent removal, illumination, heating and finally developing with a basic medium is such that the photolacquer is coated with an acid at a stage between the solvent removal and the final development step.

公开(公告)号：DE102004027213A1

公开(公告)日：2005-09-15

申请号：DE102004027213

申请日：2004-06-03

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KOESTLER WOLFRAM ,  HAFFNER HENNING ,  HASSMANN JENS ,  ANKE INES

IPC: G03F7/20

Abstract: A twin-mask process is used to structure a substrate surface with a photo varnish coating by lithography, for an integrated electronic circuit. The coating is illuminated using the first mask with a light shrouding main structure (2) and an auxiliary structure (3). The main structure is formed on the varnish, with the auxiliary structure used to support the accuracy of the image. The varnish is again illuminated with the second mask with transparent zones (4), to form further structures on the varnish, without light falling on the main structure. The structures are positioned with given gaps (A,B,D) between them.

公开(公告)号：DE60104395T2

公开(公告)日：2005-07-21

申请号：DE60104395

申请日：2001-04-19

Applicant: INFINEON TECHNOLOGIES SC300 ,  INFINEON TECHNOLOGIES AG ,  FREESCALE SEMICONDUCTOR INC

Inventor： BREEDEN TERRY ,  TUCKER MIKE ,  OTTOW STEFAN ,  KOESTLER WOLFRAM ,  WISSEL DAN

IPC: H01L21/00 ,  H01L21/302 ,  H01L21/31 ,  H01L21/311 ,  H01L21/314 ,  H01L21/318 ,  H01L21/461 ,  H01L21/469

Abstract: The present invention relates to a recycling procedure for 300 mm nitride dummies which have been previously provided with a special stabilization layer made of silicon dioxide. The recycling procedure is essentially based on selectively wet etching the deposited silicon nitride with respect to the silicon dioxide stabilization layer, preferably with hot phosphoric acid at 160 DEG C. In particular, the present invention provides a method of handling a silicon wafer which is employed as a dummy wafer during a nitride deposition process, comprising the steps of depositing a silicon dioxide layer on the wafer surface, performing the nitride deposition process on the wafer to deposit silicon nitride or silicon oxinitride on the wafer surface until a predetermined layer thickness is reached, and etching the silicon nitride or silicon oxinitride layer selectively with respect to the silicon dioxide layer.