公开(公告)号：DE50112892D1

公开(公告)日：2007-10-04

申请号：DE50112892

申请日：2001-02-13

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BACHHOFER HARALD ,  BRAUN GEORG ,  HANEDER THOMAS PETER ,  HOENLEIN WOLFGANG DR ,  ULLMANN MARC

IPC: G11C11/22 ,  H01L21/8246 ,  H01L21/8247 ,  H01L27/105 ,  H01L29/788 ,  H01L29/792

Abstract: The state of a ferroelectric transistor in a memory cell is read or stored, and the threshold voltage of further ferroelectric transistors in further memory cells in the memory matrix is increased during the reading or storing, or is increased permanently. A memory configuration including ferroelectric memory cells is also provided.

公开(公告)号：DE10038124B4

公开(公告)日：2006-05-11

申请号：DE10038124

申请日：2000-08-04

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HOENLEIN WOLFGANG DR ,  UNGER EUGEN DR

IPC: B82B3/00 ,  C01B31/02 ,  H01L51/00 ,  H01L51/05 ,  H01L51/30

公开(公告)号：DE10038124A1

公开(公告)日：2002-02-21

申请号：DE10038124

申请日：2000-08-04

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HOENLEIN WOLFGANG DR ,  UNGER EUGEN DR

IPC: C01B31/02 ,  H01L51/00 ,  H01L51/05 ,  H01L51/30 ,  B82B3/00

Abstract: Process for bonding a multiple wall nanotube (201) to a substrate (202) comprises producing chemically reactive groups on the outer wall of the nanotubes; and contacting the modified nanotubes with the substrate so that covalent chemical bonds are formed between the reactive groups and the substrate. Preferred Features: The nanotubes are multiple carbon nanotubes or multiple nanotubes doped with boron nitride. The step of contacting the nanotubes with the substrate comprises removing the nanotubes by filtration alone or by filtration and precipitation.