公开(公告)号：DE50006747D1

公开(公告)日：2004-07-15

申请号：DE50006747

申请日：2000-11-23

Applicant: INFINEON TECHNOLOGIES AG

Inventor： CZECH GUENTHER ,  FRIEDRICH CHRISTOPH ,  FUELBER DR ,  KAESMAIER RAINER ,  WIDMANN DR

IPC: G03F1/00 ,  G03F1/14 ,  G03F7/20

Abstract: Layers are patterned with a lithography method during the fabrication of integrated circuits. A mask, which may be reflective or transmissive, for carrying out the method. The photosensitive layers are exposed to radiation that is emitted by a radiation source. The radiation lies in the extreme ultraviolet region and is guided via the mask onto the photosensitive layers.

公开(公告)号：DE19958201A1

公开(公告)日：2001-06-21

申请号：DE19958201

申请日：1999-12-02

Applicant: INFINEON TECHNOLOGIES AG

Inventor： CZECH GUENTHER ,  FRIEDRICH CHRISTOPH ,  FUELBER CARSTEN ,  KAESMAIER RAINER ,  WIDMANN DIETRICH

IPC: G03F1/00 ,  G03F1/14 ,  G03F7/20 ,  H01L21/768

Abstract: Lithographic process for structuring layers during the manufacture of integrated circuits comprises guiding radiation emitted by a radiation source and lying in the extreme UV range onto photosensitive layers via a mask (11). An Independent claim is also included for a mask for carrying out the process. Preferred Features: The radiation source emits radiation in the wavelength range of 11-14 nm. The source is a xenon-plasma source. The mask is a reflection mask, transmission mask or binary mask. The mask has a transparent carrier layer (13) formed by a first silicon layer. Second silicon layers forming opaque regions (14) are applied to the carrier layer.