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1.发明申请
公开(公告)号：WO03038875A2
公开(公告)日：2003-05-08
申请号：PCT/DE0204034
申请日：2002-10-29
Applicant: INFINEON TECHNOLOGIES AG , CZECH GUENTHER , FUELBER CARSTEN , KIRCHHOFF MARKUS , STEGEMANN MAIK , VOGT MIRKO , WEGE STEPHAN
Inventor： CZECH GUENTHER , FUELBER CARSTEN , KIRCHHOFF MARKUS , STEGEMANN MAIK , VOGT MIRKO , WEGE STEPHAN
IPC: G03F7/36 , H01L21/033 , H01L21/308 , H01L21/311 , H01L21/314 , H01L21/027 , C23C16/26 , C23C16/27 , G03F7/09 , G03F7/11
CPC classification number: H01L21/3146 , H01L21/0332 , H01L21/3081 , H01L21/31144
Abstract: According to the invention, a carbon hard mask layer (2) is applied to a substrate to be structured (1) by means of a plasma-enhanced deposition method in such a way that it has a diamond-like hardness in at least one vertical section of a layer. During the production of said diamond-type vertical section of a layer, the deposition parameters are adjusted in such a way that certain diamond-type growth regions are removed in situ by means of subsequent etching processes, and other diamond-type regions remain.
Abstract translation: 碳硬掩模层（2）以这样的方式通过等离子辅助沉积到基底上要被图案化（1）施加，使得其具有在金刚石的至少一个层厚度部分类似的硬度。 在这种类金刚石层厚度部分的产生，用于沉积的参数被设定为使得其它生长区域形成类金刚石原位通过随后的蚀刻工艺被去除，并且保持在该金刚石状形成的部分。
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公开(公告)号：DE10164306B4
公开(公告)日：2006-06-08
申请号：DE10164306
申请日：2001-12-28
Applicant: INFINEON TECHNOLOGIES AG
Inventor： NOELSCHER CHRISTOPH , SEMMLER ARMIN , CZECH GUENTHER
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公开(公告)号：DE10006952C2
公开(公告)日：2002-05-16
申请号：DE10006952
申请日：2000-02-16
Applicant: INFINEON TECHNOLOGIES AG
Inventor： FRIEDRICH CHRISTOPH , GRIESINGER UWE , GANS FRITZ , ERGENZINGER KLAUS , MAURER WILHELM , PFORR RAINER , KNOBLOCH JUERGEN , WIDMANN DIETRICH , CZECH GUENTHER , FUELBER CARSEN
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公开(公告)号：DE10048151A1
公开(公告)日：2002-05-02
申请号：DE10048151
申请日：2000-09-28
Applicant: INFINEON TECHNOLOGIES AG
Inventor： CZECH GUENTHER , FUELBER CARSTEN , HENKE WOLFGANG
Abstract: The photomask and the associated method of lithography and mask technique enable production of a regular configuration of resist dots or holes. At least one photomask is a phase mask. The method is useful for the production of magnetic memory components, in particular MRAM memories, having elliptically shaped magnetic memory elements of high density.
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公开(公告)号：DE50006747D1
公开(公告)日：2004-07-15
申请号：DE50006747
申请日：2000-11-23
Applicant: INFINEON TECHNOLOGIES AG
Inventor： CZECH GUENTHER , FRIEDRICH CHRISTOPH , FUELBER DR , KAESMAIER RAINER , WIDMANN DR
Abstract: Layers are patterned with a lithography method during the fabrication of integrated circuits. A mask, which may be reflective or transmissive, for carrying out the method. The photosensitive layers are exposed to radiation that is emitted by a radiation source. The radiation lies in the extreme ultraviolet region and is guided via the mask onto the photosensitive layers.
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Patent Agency Ranking
公开(公告)号：DE10164306A1
公开(公告)日：2003-07-17
申请号：DE10164306
申请日：2001-12-28
Applicant: INFINEON TECHNOLOGIES AG
Inventor： NOELSCHER CHRISTOPH , SEMMLER ARMIN , CZECH GUENTHER
Abstract: A method for structuring photoresists, in which a photoresist is prepared on a substrate and undergoes a first exposure, in which the photoresist is exposed with a first photomask which images a main structure and an auxiliary structure which improves imaging of the main structure formed on the photoresist, so that a chemical differentiation of the photoresist between the exposed and unexposed zones results. Subsequently a second exposure with a second photomask is carried out, which displays the imaging auxiliary structure on the photoresist and the main structure is not imaged on the photoresist, such that only in the displayed sections of the imaging auxiliary structure does a chemical modification of the photoresist result, and the photoresist is developed with a developer such that only the main structure remains on the substrate. An Independent claim is given for a photomask with a main structure and an auxiliary structure.
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公开(公告)号：DE10121178A1
公开(公告)日：2002-12-05
申请号：DE10121178
申请日：2001-04-30
Applicant: INFINEON TECHNOLOGIES AG
Inventor： CZECH GUENTHER , RICHTER ERNST-CHRISTIAN , SCHELER ULRICH , SEBALD MICHAEL
Abstract: Determining image distortions of photomasks comprises applying a photo-active layer on a substrate; forming a latent image of the mask in the photo-active layer by irradiating; treating with amplifying agent which reacts with components of the material of the photo-active layer to form a chemical bond; and determining the growth of the photo-active layer outside and/or inside the image of the mask. Independent claims are also included for the following: (i) a process for optimizing the layout of a photomask; and (ii) a process for determining the local radiation dose. Preferred Features: After producing the latent image, a contrasting step is carried out, preferably by heat treating. An anti-reflection layer is formed on the substrate below the photo-active layer.
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公开(公告)号：DE50209381D1
公开(公告)日：2007-03-15
申请号：DE50209381
申请日：2002-10-29
Applicant: INFINEON TECHNOLOGIES AG
Inventor： CZECH GUENTHER , FUELBER CARSTEN , KIRCHHOFF MARKUS , STEGEMANN MAIK , VOGT MIRKO , WEGE STEPHAN
IPC: H01L21/033 , C23C16/26 , C23C16/27 , G03F7/09 , G03F7/11 , G03F7/36 , H01L21/027 , H01L21/308 , H01L21/311 , H01L21/314
Abstract: A carbon hard mask layer is applied to a substrate to be patterned by means of a plasma-enhanced deposition process in such a manner that it has a hardness comparable to that of diamond in at least one layer thickness section. During the production of this diamond-like layer thickness section, the parameters used in the deposition are set in such a manner that growth regions which are produced in a form other than diamond-like are removed again in situ by means of subsequent etching processes and that diamond-like regions which are formed are retained.
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公开(公告)号：DE10006952A1
公开(公告)日：2001-08-30
申请号：DE10006952
申请日：2000-02-16
Applicant: INFINEON TECHNOLOGIES AG
Inventor： FRIEDRICH CHRISTOPH , GRIESINGER UWE , GANS FRITZ , ERGENZINGER KLAUS , MAURER WILHELM , PFORR RAINER , KNOBLOCH JUERGEN , WIDMANN DIETRICH , CZECH GUENTHER , FUELBER CARSEN
Abstract: Mask set comprises a first chrome-less phase mask (1) for producing exposed and non-exposed regions on a photolaquer in a minimal structure and a second mask (2) for dividing the non-exposed regions by exposing partial regions of the regions non-exposed by the first phase mask. An Independent claim is also claimed for a process for producing structures acting as resist masks (3). Preferred Features: The second mask is a chrome-on-glass mask or a halftone mask. The exposed and non-exposed regions produced by the first mask are formed in straight lines. Both masks each have a number of individual structures.
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公开(公告)号：DE10121179B4
公开(公告)日：2005-12-22
申请号：DE10121179
申请日：2001-04-30
Applicant: INFINEON TECHNOLOGIES AG
Inventor： CZECH GUENTHER , RICHTER ERNST-CHRISTIAN , SCHELER ULRICH , SEBALD MICHAEL
Abstract: Imaging errors in optical exposure units for the lithographic structuring of semiconductors are determined. First, a latent image of a mask is first produced in a photoactivatable layer by exposure using the optical exposure unit to be tested. After heat treating for increasing the contrast and developing the exposed resist, the latter is treated with an amplification agent which preferably diffuses into the exposed parts of the photoresist. There, it reacts with groups of the photoresist. This leads to an increase in the layer thickness of the resist in the exposed parts. A topographical image of the surface of the photoresist, which can be created, for example, by scanning electron microscopy, then indicates imaging errors by protuberances which are located outside the image of the mask. The method permits testing of optical exposure units under production conditions and thus facilitates the adjustment and the checking of all components of the exposure system used for the production of microchips.
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