公开(公告)号：WO03038875A2

公开(公告)日：2003-05-08

申请号：PCT/DE0204034

申请日：2002-10-29

Applicant: INFINEON TECHNOLOGIES AG ,  CZECH GUENTHER ,  FUELBER CARSTEN ,  KIRCHHOFF MARKUS ,  STEGEMANN MAIK ,  VOGT MIRKO ,  WEGE STEPHAN

Inventor： CZECH GUENTHER ,  FUELBER CARSTEN ,  KIRCHHOFF MARKUS ,  STEGEMANN MAIK ,  VOGT MIRKO ,  WEGE STEPHAN

IPC: G03F7/36 ,  H01L21/033 ,  H01L21/308 ,  H01L21/311 ,  H01L21/314 ,  H01L21/027 ,  C23C16/26 ,  C23C16/27 ,  G03F7/09 ,  G03F7/11

CPC classification number: H01L21/3146 ,  H01L21/0332 ,  H01L21/3081 ,  H01L21/31144

Abstract: According to the invention, a carbon hard mask layer (2) is applied to a substrate to be structured (1) by means of a plasma-enhanced deposition method in such a way that it has a diamond-like hardness in at least one vertical section of a layer. During the production of said diamond-type vertical section of a layer, the deposition parameters are adjusted in such a way that certain diamond-type growth regions are removed in situ by means of subsequent etching processes, and other diamond-type regions remain.

Abstract translation: 碳硬掩模层（2）以这样的方式通过等离子辅助沉积到基底上要被图案化（1）施加，使得其具有在金刚石的至少一个层厚度部分类似的硬度。 在这种类金刚石层厚度部分的产生，用于沉积的参数被设定为使得其它生长区域形成类金刚石原位通过随后的蚀刻工艺被去除，并且保持在该金刚石状形成的部分。

公开(公告)号：DE10335816A1

公开(公告)日：2005-03-03

申请号：DE10335816

申请日：2003-08-05

Applicant: INFINEON TECHNOLOGIES AG

Inventor： FUELBER CARSTEN ,  ROESIGER MARTIN ,  ZIEBOLD RALF

IPC: G03F7/20 ,  G03F9/00 ,  H01L21/68

Abstract: Firstly element (20) of first structure (2) and first measuring mark (6) is projected into first layer on test substrate, followed by projecting element (40), allocated to first element, as part of second structure (4), and of second mark (8), into second layer on substrate.First transposition (103) between two measuring marks on substrate is measured, as is second different transposition (104) between two transpositions is computed for correcting adjustment of substrate, due to lens distortion of exposure appliance.

公开(公告)号：DE10048151A1

公开(公告)日：2002-05-02

申请号：DE10048151

申请日：2000-09-28

Applicant: INFINEON TECHNOLOGIES AG

Inventor： CZECH GUENTHER ,  FUELBER CARSTEN ,  HENKE WOLFGANG

IPC: G03F1/00 ,  G03F7/20

Abstract: The photomask and the associated method of lithography and mask technique enable production of a regular configuration of resist dots or holes. At least one photomask is a phase mask. The method is useful for the production of magnetic memory components, in particular MRAM memories, having elliptically shaped magnetic memory elements of high density.

公开(公告)号：DE19945144C2

公开(公告)日：2001-11-29

申请号：DE19945144

申请日：1999-09-21

Applicant: INFINEON TECHNOLOGIES AG

Inventor： FUELBER CARSTEN ,  DOLESCHEL BERNHARD

IPC: G03F7/20 ,  G03F7/30 ,  G03F1/00 ,  H01L21/312

公开(公告)号：DE19958201A1

公开(公告)日：2001-06-21

申请号：DE19958201

申请日：1999-12-02

Applicant: INFINEON TECHNOLOGIES AG

Inventor： CZECH GUENTHER ,  FRIEDRICH CHRISTOPH ,  FUELBER CARSTEN ,  KAESMAIER RAINER ,  WIDMANN DIETRICH

IPC: G03F1/00 ,  G03F1/14 ,  G03F7/20 ,  H01L21/768

Abstract: Lithographic process for structuring layers during the manufacture of integrated circuits comprises guiding radiation emitted by a radiation source and lying in the extreme UV range onto photosensitive layers via a mask (11). An Independent claim is also included for a mask for carrying out the process. Preferred Features: The radiation source emits radiation in the wavelength range of 11-14 nm. The source is a xenon-plasma source. The mask is a reflection mask, transmission mask or binary mask. The mask has a transparent carrier layer (13) formed by a first silicon layer. Second silicon layers forming opaque regions (14) are applied to the carrier layer.

公开(公告)号：DE10335816B4

公开(公告)日：2007-07-12

申请号：DE10335816

申请日：2003-08-05

Applicant: INFINEON TECHNOLOGIES AG

Inventor： FUELBER CARSTEN ,  ROESIGER MARTIN ,  ZIEBOLD RALF

IPC: H01L21/68 ,  G03F7/20 ,  G03F9/00

公开(公告)号：DE50209381D1

公开(公告)日：2007-03-15

申请号：DE50209381

申请日：2002-10-29

Applicant: INFINEON TECHNOLOGIES AG

Inventor： CZECH GUENTHER ,  FUELBER CARSTEN ,  KIRCHHOFF MARKUS ,  STEGEMANN MAIK ,  VOGT MIRKO ,  WEGE STEPHAN

IPC: H01L21/033 ,  C23C16/26 ,  C23C16/27 ,  G03F7/09 ,  G03F7/11 ,  G03F7/36 ,  H01L21/027 ,  H01L21/308 ,  H01L21/311 ,  H01L21/314

Abstract: A carbon hard mask layer is applied to a substrate to be patterned by means of a plasma-enhanced deposition process in such a manner that it has a hardness comparable to that of diamond in at least one layer thickness section. During the production of this diamond-like layer thickness section, the parameters used in the deposition are set in such a manner that growth regions which are produced in a form other than diamond-like are removed again in situ by means of subsequent etching processes and that diamond-like regions which are formed are retained.

公开(公告)号：DE19945144A1

公开(公告)日：2001-04-19

申请号：DE19945144

申请日：1999-09-21

Applicant: INFINEON TECHNOLOGIES AG

Inventor： FUELBER CARSTEN ,  DOLESCHEL BERNHARD

IPC: G03F7/20 ,  G03F7/30 ,  G03F1/00 ,  H01L21/312