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公开(公告)号:WO03016590A3
公开(公告)日:2003-05-30
申请号:PCT/DE0202592
申请日:2002-07-15
Applicant: INFINEON TECHNOLOGIES AG , KOGLER RUDOLF , SCHOENHERR HELMUT , SKRABL SILKE , URSCHITZ ROLF
Inventor: KOGLER RUDOLF , SCHOENHERR HELMUT , SKRABL SILKE , URSCHITZ ROLF
IPC: C23C16/44 , C23C16/448 , C23C16/455
CPC classification number: C23C16/4408 , C23C16/4481 , C23C16/455 , C23C16/45561
Abstract: The invention relates to a device comprising a supply line branch (Z1) for a gas mixture consisting of an atomized medium (M1) and a carrier gas (T) to a CVD reactor (R). The supply line branch (Z1) comprises a supply line for the liquid medium (M1), a supply line for the carrier gas (T) and a processing unit which is fed by the supply lines and is used to convert the liquid medium (M1) into a gaseous state using an injector valve (EV1) and to mix the medium (M1) with the carrier gas (T). The supply lines are respectively provided with a through flow control unit (DS11, DS12)
Abstract translation: 本发明涉及一种具有用于雾化介质(M1)和载气(T)的气体混合物到CVD反应器(R)的进料分支(Z1)的装置。 输送支路(Z1)包括用于将所述液体介质的进料管线(M1),用于将载气(T)的供给线,并且通过进料管线处理单元,用于通过在所述气体状态的喷射阀(EV1)的装置将流体传递介质(M1)进给,并 用于将介质(M1)与载气(T)混合。 供电线路各有一个流量控制单元(DS11,DS12)。
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公开(公告)号:DE502004002981D1
公开(公告)日:2007-04-05
申请号:DE502004002981
申请日:2004-07-28
Applicant: INFINEON TECHNOLOGIES AG
Inventor: BAUMGARTL JOHANNES , KOGLER RUDOLF , VALLANT THOMAS
IPC: H01L21/205 , B01F23/10 , C23C16/455 , C30B25/02 , C30B25/14 , F17C13/04
Abstract: The invention relates to a gas-supply assembly (10) for a process reactor (270). The gas-supply assembly (10) contains at least one changeover unit (420), a process-gas line (470) and an auxiliary line (460). The process reactor (270) contains at least one gas-inlet connection (404). A reactor line (450) lies between the changeover unit (420) and the gas-inlet connection (404). The reactor line (450) is shorter than one metre, producing excellent operating characteristics for the gas-supply assembly.
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公开(公告)号:DE10337568A1
公开(公告)日:2005-03-17
申请号:DE10337568
申请日:2003-08-14
Applicant: INFINEON TECHNOLOGIES AG
Inventor: BAUMGARTL JOHANNES , KOGLER RUDOLF , VALLANT THOMAS
IPC: B01F23/10 , C23C16/455 , C30B25/02 , C30B25/14 , H01L21/205
Abstract: The invention relates to a gas-supply assembly (10) for a process reactor (270). The gas-supply assembly (10) contains at least one changeover unit (420), a process-gas line (470) and an auxiliary line (460). The process reactor (270) contains at least one gas-inlet connection (404). A reactor line (450) lies between the changeover unit (420) and the gas-inlet connection (404). The reactor line (450) is shorter than one metre, producing excellent operating characteristics for the gas-supply assembly.
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公开(公告)号:DE10137673A1
公开(公告)日:2003-02-27
申请号:DE10137673
申请日:2001-08-01
Applicant: INFINEON TECHNOLOGIES AG
Inventor: KOGLER RUDOLF , URSCHITZ ROLF , SKRABL SILKE , SCHOENHERR HELMUT
IPC: C23C16/44 , C23C16/448 , C23C16/455
Abstract: The invention relates to a device comprising a supply line branch (Z1) for a gas mixture consisting of an atomized medium (M1) and a carrier gas (T) to a CVD reactor (R). The supply line branch (Z1) comprises a supply line for the liquid medium (M1), a supply line for the carrier gas (T) and a processing unit which is fed by the supply lines and is used to convert the liquid medium (M1) into a gaseous state using an injector valve (EV1) and to mix the medium (M1) with the carrier gas (T). The supply lines are respectively provided with a through flow control unit (DS11, DS12)
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公开(公告)号:DE102018100066A1
公开(公告)日:2018-07-26
申请号:DE102018100066
申请日:2018-01-03
Applicant: INFINEON TECHNOLOGIES AG
Inventor: KOGLER RUDOLF , DASTEL WOLFGANG , HÜTTER HARALD , KAHN MARKUS , STEINBRENNER JÜRGEN
IPC: H01L21/683 , H01L21/302 , H01L21/68
Abstract: Gemäß verschiedenen Ausführungsformen kann ein Wafer-Chuck (100) wenigstens einen Stützbereich (100s), der dazu ausgelegt ist, einen Wafer (106) in einer Aufnahmefläche (102) zu stützen, eine von dem wenigstens einen Stützbereich (100s) umgebene zentrale Vertiefung (100c), die dazu ausgelegt ist, den Wafer (106) nur entlang eines äußeren Umkreises zu stützen, und eine die Aufnahmefläche (102) umgebende Begrenzungsstruktur, die dazu ausgelegt ist, den Wafer (106) in der Aufnahmefläche (102) zu halten, enthalten.
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