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    DEVICE FOR SUPPLYING GAS MIXTURES TO A CVD REACTOR
    1.
    发明申请
    DEVICE FOR SUPPLYING GAS MIXTURES TO A CVD REACTOR 审中-公开
    用于向CVD反应器供应气体混合物的装置

    公开(公告)号：WO03016590A3

    公开(公告)日：2003-05-30

    申请号：PCT/DE0202592

    申请日：2002-07-15

    Applicant: INFINEON TECHNOLOGIES AG ,  KOGLER RUDOLF ,  SCHOENHERR HELMUT ,  SKRABL SILKE ,  URSCHITZ ROLF

    Inventor： KOGLER RUDOLF ,  SCHOENHERR HELMUT ,  SKRABL SILKE ,  URSCHITZ ROLF

    IPC: C23C16/44 ,  C23C16/448 ,  C23C16/455

    CPC classification number: C23C16/4408 ,  C23C16/4481 ,  C23C16/455 ,  C23C16/45561

    Abstract: The invention relates to a device comprising a supply line branch (Z1) for a gas mixture consisting of an atomized medium (M1) and a carrier gas (T) to a CVD reactor (R). The supply line branch (Z1) comprises a supply line for the liquid medium (M1), a supply line for the carrier gas (T) and a processing unit which is fed by the supply lines and is used to convert the liquid medium (M1) into a gaseous state using an injector valve (EV1) and to mix the medium (M1) with the carrier gas (T). The supply lines are respectively provided with a through flow control unit (DS11, DS12)

    Abstract translation: 本发明涉及一种具有用于雾化介质（M1）和载气（T）的气体混合物到CVD反应器（R）的进料分支（Z1）的装置。 输送支路（Z1）包括用于将所述液体介质的进料管线（M1），用于将载气（T）的供给线，并且通过进料管线处理单元，用于通过在所述气体状态的喷射阀（EV1）的装置将流体传递介质（M1）进给，并 用于将介质（M1）与载气（T）混合。 供电线路各有一个流量控制单元（DS11，DS12）。

    Production of a semiconductor wafer useful in e.g. chip cards, comprises applying a semiconductor layer epitaxially on a surface of a semiconductor substrate, and partially removing the substrate from the semiconductor layer
    4.
    发明专利
    Production of a semiconductor wafer useful in e.g. chip cards, comprises applying a semiconductor layer epitaxially on a surface of a semiconductor substrate, and partially removing the substrate from the semiconductor layer 未知

    公开(公告)号：DE102006030869A1

    公开(公告)日：2008-01-10

    申请号：DE102006030869

    申请日：2006-07-04

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： FATHULLA AHMAD ,  LACKNER GERALD ,  RUPP THOMAS ,  SANTOS RODRIGUEZ FRANCISCO JAV ,  SCHOENHERR HELMUT ,  SCHULZE HANS-JOACHIM

    IPC: H01L21/306 ,  C30B25/02

    Abstract: The production of a semiconductor wafer useful in e.g. chip cards, comprises providing a semiconductor substrate (1) from a first semiconductor material with a first surface and a second surface, which faces the first surface, applying a first semiconductor layer (2) from a second semiconductor material epitaxially on the second surface, and partially removing the substrate from the first semiconductor layer. The epitaxial application of a second semiconductor layer (3) from a third semiconductor material on the first semiconductor layer takes place to the desired target thickness. The production of a semiconductor wafer useful in e.g. chip cards, comprises providing a semiconductor substrate (1) from a first semiconductor material with a first surface and a second surface, which faces the first surface, applying a first semiconductor layer (2) from a second semiconductor material epitaxially on the second surface, and partially removing the substrate from the first semiconductor layer. The epitaxial application of a second semiconductor layer (3) from a third semiconductor material on the first semiconductor layer takes place to the desired target thickness. After the partial removing, the first semiconductor layer is partly removed via corroding. Before corroding a prefabricated device is attached as an etching mask at the first surface of the substrate. The device covers an external area of the first surface and limits an opening that releases an internal area of the first surface of the substrate, and is again removed after corroding. A semiconductor component (4) is formed in the first- and second semiconductor layer before the partial removing of the substrate.

    5.
    发明专利
    未知

    公开(公告)号：DE10137673A1

    公开(公告)日：2003-02-27

    申请号：DE10137673

    申请日：2001-08-01

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： KOGLER RUDOLF ,  URSCHITZ ROLF ,  SKRABL SILKE ,  SCHOENHERR HELMUT

    IPC: C23C16/44 ,  C23C16/448 ,  C23C16/455

    Abstract: The invention relates to a device comprising a supply line branch (Z1) for a gas mixture consisting of an atomized medium (M1) and a carrier gas (T) to a CVD reactor (R). The supply line branch (Z1) comprises a supply line for the liquid medium (M1), a supply line for the carrier gas (T) and a processing unit which is fed by the supply lines and is used to convert the liquid medium (M1) into a gaseous state using an injector valve (EV1) and to mix the medium (M1) with the carrier gas (T). The supply lines are respectively provided with a through flow control unit (DS11, DS12)

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