公开(公告)号：DE102004007409A1

公开(公告)日：2005-09-08

申请号：DE102004007409

申请日：2004-02-16

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HAUPT MORITZ ,  FOERSTER MATTHIAS ,  KEGEL WILHELM ,  STADTMUELLER MICHAEL ,  DIETEL ANDREAS ,  STORBECK OLAF ,  GEIDL JOCHEN

IPC: H01L21/763 ,  H01L21/768 ,  H01L21/8242

Abstract: Semiconductor structure manufacturing method has the following steps: provision of a semiconductor substrate (1) with a trench (5) and deposition of a filling layer (10b) of doped silicon to fill the trench and cover the surrounding structure using an over-conforming separation method that has an over-conforming separation rate due to a dosing concentration gradient. This ensures that the trench is at least partially filled from the bottom to the top.

公开(公告)号：DE102004007409B4

公开(公告)日：2006-06-01

申请号：DE102004007409

申请日：2004-02-16

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HAUPT MORITZ ,  FOERSTER MATTHIAS ,  KEGEL WILHELM ,  STADTMUELLER MICHAEL ,  DIETEL ANDREAS ,  STORBECK OLAF ,  GEIDL JOCHEN

IPC: H01L21/763 ,  H01L21/768 ,  H01L21/8242

公开(公告)号：DE10137113A1

公开(公告)日：2003-02-27

申请号：DE10137113

申请日：2001-07-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KRAEMER HANS ,  GEIDL JOCHEN ,  HERRLICH LUTZ ,  GOEHLER JENS ,  MIMIETZ STEFFEN ,  GROBITZSCH ELISABETH ,  PATAKI ANETT

IPC: H01L21/302

Abstract: Regenerating semiconductor wafers mostly made from silicon comprises determining the extent of damage on the main surfaces of the wafer; grinding and chemical-mechanical polishing the surfaces; and wet chemical cleaning. Preferred Features: The grinding is carried out in the wet state using a diamond abrasive disk. Polishing is carried out in the presence of a polishing solution made from 0.26-normal tetramethylammonium hydroxide solution, 12 % silicon dioxide solution and 8 % aluminum sulfate solution. The wet chemical cleaning is carried out in the presence of 10-50 % hydrofluoric acid.