METHOD FOR STRUCTURING A METALLIFEROUS LAYER
    2.
    发明申请
    METHOD FOR STRUCTURING A METALLIFEROUS LAYER 审中-公开
    方法构建含有金属层

    公开(公告)号:WO0034985A3

    公开(公告)日:2002-02-14

    申请号:PCT/DE9903876

    申请日:1999-12-03

    CPC classification number: H01L21/32136 H01L21/31122

    Abstract: The invention relates to a method for structuring a metalliferous layer. The metalliferous layer (4) is etched using an etching mask (8) in a plasma-enhanced etching gas atmosphere at a temperature of more than 130 DEG C in the presence of at least one halogen compound and at least one oxidant. The concentration of said oxidant is higher than the concentration of the halogen compound.

    Abstract translation: 所以建议图案化的含金属的层的方法。 含金属层(4)在这种情况下使用的蚀刻掩模(8)蚀刻辅助在至少一种卤素化合物和至少一种氧化剂的存在下高于130℃的温度下的蚀刻气体气氛中的等离子体,其中,所述氧化剂的浓度比卤素化合物的浓度较高的 ,

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