Abstract:
The invention relates to a method of producing a metal oxide film. The inventive method comprises the following steps: a) providing a barrier film, b) applying a metal film onto the barrier film, and c) thermally oxidizing the metal film in an oxygen atmosphere, thereby producing a metal oxide film (3').
Abstract:
The invention relates to a method for structuring a metalliferous layer. The metalliferous layer (4) is etched using an etching mask (8) in a plasma-enhanced etching gas atmosphere at a temperature of more than 130 DEG C in the presence of at least one halogen compound and at least one oxidant. The concentration of said oxidant is higher than the concentration of the halogen compound.