公开(公告)号：WO2005029104A8

公开(公告)日：2005-05-26

申请号：PCT/DE2004001879

申请日：2004-08-24

Applicant: INFINEON TECHNOLOGIES AG ,  KERBER MARTIN ,  POMPL THOMAS

Inventor： KERBER MARTIN ,  POMPL THOMAS

IPC: G01R19/175 ,  G01R31/27 ,  G01R31/30 ,  G01R31/26

CPC classification number: G01R31/2621 ,  G01R19/175 ,  G01R31/2642 ,  G01R31/275 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The invention relates to an electronic switching circuit in which a plurality of test circuit blocks is provided, whereby every test circuit block comprises a first sub-circuit block and at least one second sub-circuit block. A field effect transistor in the first sub-circuit block has a gate insulation layer that is thicker than the gate insulation layer of a field effect transistor in the second sub-circuit block.

Abstract translation: 在电子电路和多个测试电路块的设置，具有一个第一子电路块和至少一个第二子电路块中的每个测试电路块。 在第一子电路块的场效应晶体管包括栅极绝缘层，其是比栅极绝缘场效应晶体管的薄膜在所述第二子电路块更厚。

公开(公告)号：WO0034991A3

公开(公告)日：2000-11-16

申请号：PCT/DE9903878

申请日：1999-12-03

Applicant: INFINEON TECHNOLOGIES AG ,  POMPL THOMAS ,  WURZER HELMUT ,  REBITZER WOLFGANG ,  GAERTNER THOMAS ,  KRAHL KERSTIN ,  WEGE STEPHAN ,  GEHRING OLIVER

Inventor： POMPL THOMAS ,  WURZER HELMUT ,  REBITZER WOLFGANG ,  GAERTNER THOMAS ,  KRAHL KERSTIN ,  WEGE STEPHAN ,  GEHRING OLIVER

IPC: C23C8/02 ,  C23C14/58 ,  C23C28/00 ,  H01L21/28 ,  H01L21/311

CPC classification number: C23C14/5853 ,  C23C8/02 ,  C23C28/00 ,  H01L21/28167 ,  H01L21/31116 ,  H01L29/511

Abstract: The invention relates to a method of producing a metal oxide film. The inventive method comprises the following steps: a) providing a barrier film, b) applying a metal film onto the barrier film, and c) thermally oxidizing the metal film in an oxygen atmosphere, thereby producing a metal oxide film (3').

Abstract translation: 根据本发明，提供了一种用于生产金属氧化物层的方法。 在这种情况下，本发明的方法包括以下步骤：a）阻挡层设置，b）中在阻挡层上，金属层被沉积​​，以及c）将金属层在氧气氛中进行热氧化，从而产生一个金属氧化物层（3“）。

公开(公告)号：DE10029658A1

公开(公告)日：2002-01-03

申请号：DE10029658

申请日：2000-06-16

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHREMS MARTIN ,  WURZER HELMUT ,  KRASEMANN ANKE ,  POMPL THOMAS

IPC: H01L21/316 ,  H01L27/08 ,  H01L21/314 ,  H01L21/336 ,  H01L21/822

Abstract: Production of a barrier layer comprises oxidizing silicon substrate (1) to produce substrate oxide (2) on the substrate surface, forming oxygen-impermeable layer (4) on boundary surface between substrate oxide layer and substrate, and etching substrate oxide layer until the oxygen-impermeable layer underneath is exposed. Preferred Features: The oxygen-impermeable layer is formed as a barrier to prevent the formation of metal silicide compounds between the applied metal and the silicon substrate. The oxygen-impermeable layer is produced while nitrogen ions are implanted in the substrate. The substrate oxide is subjected to a nitrogen gas, N2O gas, a NO gas or ammonia. Etching is a wet chemical or dry etching process.

公开(公告)号：DE502004007451D1

公开(公告)日：2008-08-07

申请号：DE502004007451

申请日：2004-08-24

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KERBER MARTIN ,  POMPL THOMAS

IPC: G01R31/30 ,  G01R19/175 ,  G01R31/26 ,  G01R31/27

公开(公告)号：DE10029658C2

公开(公告)日：2003-01-09

申请号：DE10029658

申请日：2000-06-16

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHREMS MARTIN ,  WURZER HELMUT ,  KRASEMANN ANKE ,  POMPL THOMAS

IPC: H01L21/316 ,  H01L27/08 ,  H01L21/314 ,  H01L21/336 ,  H01L21/822

Abstract: Method for fabricating a barrier layer having the following steps, namely oxidation of a substrate (1) composed of silicon in order to produce a substrate oxide (2) on the surface of the substrate (1); production of an oxygen-impervious layer (4) at the interface between the substrate oxide layer (2) and the substrate (1), the oxygen-impervious layer (4), as barrier, preventing the formation of metal silicide compounds between applied metal and the substrate silicon; etching of the substrate oxide layer (2) until the underlying oxygen-impervious layer (4) is uncovered.

公开(公告)号：DE10021095A1

公开(公告)日：2001-10-31

申请号：DE10021095

申请日：2000-04-20

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KERBER MARTIN ,  WURZER HELMUT ,  POMPL THOMAS

IPC: H01L21/265 ,  H01L21/316 ,  H01L21/314

Abstract: The method involves implanting ions (5) in a surface layer (4) of the semiconductor substrate (2) to form a first dielectric layer (7). A thermal oxidation process is performed to form a second dielectric layer (8) on the first dielectric layer (7). The semiconductor substrate is preferably a silicon substrate. The implanted ions are nitrogen ions (5). Prior to forming the dielectric, a cleaning process may be performed to clean the semiconductor substrate surface.

公开(公告)号：DE19856084C2

公开(公告)日：2002-07-11

申请号：DE19856084

申请日：1998-12-04

Applicant: INFINEON TECHNOLOGIES AG

Inventor： POMPL THOMAS ,  WURZER HELMUT ,  REBITZER WOLFGANG ,  GAERTNER THOMAS ,  GEHRING OLIVER ,  KRAHL KERSTIN ,  WEGE STEPHAN

IPC: C23C8/02 ,  C23C14/58 ,  C23C28/00 ,  H01L21/28 ,  H01L21/311 ,  C23C14/14 ,  C23F4/00

公开(公告)号：DE19958203A1

公开(公告)日：2001-06-13

申请号：DE19958203

申请日：1999-12-02

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WURZER HELMUT ,  SCHREMS MARTIN ,  POMPL THOMAS ,  KRASEMANN ANKE

IPC: H01L21/02 ,  H01L21/8242

Abstract: Production of an oxidation-resistant electrode comprises forming a metal oxide layer (3) on a substrate (1); applying an oxidation blocking layer (4) impermeable for oxygen atoms on the metal oxide layer; and applying an electrode (5) on the blocking layer. Preferred Features: A metal barrier layer (2) is formed between the metal oxide layer and the substrate. The metal oxide layer is made of tantalum pentoxide or aluminum oxide. The metal barrier layer is made of silicon dioxide or silicon nitride.

公开(公告)号：DE10342997A1

公开(公告)日：2005-04-28

申请号：DE10342997

申请日：2003-09-17

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KERBER MARTIN ,  POMPL THOMAS

IPC: G01R19/175 ,  G01R31/27 ,  G01R31/30 ,  G01R31/26 ,  G01R31/28 ,  H01L21/66 ,  H01L23/544