公开(公告)号：DE102006013459A1

公开(公告)日：2007-09-27

申请号：DE102006013459

申请日：2006-03-23

Applicant: INFINEON TECHNOLOGIES AG

Inventor： PFORR RAINER ,  TSCHISCHGALE JOERG ,  KUECHLER BERND ,  MUELDERS THOMAS

IPC: G03F7/20

Abstract: The arrangement has a lighting device (4) for producing radiations (1000), and a photo-mask (2) with a set of structural units (3), where the radiations transmit the structural units to a photo-resist (21) arranged on a substrate (5). An optical unit (6) has a surface (7), and causes a local variation of transmission rate of the radiations depending on an angle of incidence of the radiations with respect to the surface. The optical unit is arranged between the photo-mask and the substrate. An independent claim is also included for a method for transmitting structural units to a substrate.

公开(公告)号：DE10340436B4

公开(公告)日：2006-07-27

申请号：DE10340436

申请日：2003-09-02

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KUECHLER BERND ,  ROESIGER MARTIN

IPC: G03F7/20 ,  G05B17/00

公开(公告)号：DE10355264A1

公开(公告)日：2005-07-07

申请号：DE10355264

申请日：2003-11-26

Applicant: INFINEON TECHNOLOGIES AG

Inventor： ZIEBOLD RALF ,  NOELSCHER CHRISTOPH ,  KUECHLER BERND

IPC: G03F1/00 ,  G03F1/36 ,  G03F7/20 ,  G05B17/00 ,  G06F17/50

公开(公告)号：DE102005051824A1

公开(公告)日：2007-05-03

申请号：DE102005051824

申请日：2005-10-28

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KUECHLER BERND

IPC: G03F7/20

Abstract: A method of modeling an illumination distribution in a lighting pupil region of an imaging unit for a photolithographic image of a structure in a mask on a semiconductor wafer in which a known model is used comprises supplying calculated light distributions through at least one user-defined filter with the illumination distribution intensity lying between zero and 100%. Independent claims are also included for three methods for parameter determination for the method above.

公开(公告)号：DE10340436A1

公开(公告)日：2005-05-19

申请号：DE10340436

申请日：2003-09-02

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KUECHLER BERND ,  ROESIGER MARTIN

IPC: G03F7/20 ,  G05B17/00

Abstract: The method involves selecting parameters describing the model, and combining them to form a number of nodes which cover the parameter space in a grid shape. Simulations for the exposure of a projection apparatus are carried out to determine geometric parameters such as line width of the structural elements formed in the resist. A polynomial function is adapted to the results of the simulation, and a total error function is derived by comparison with recorded measurements.