公开(公告)号：JP2006210928A

公开(公告)日：2006-08-10

申请号：JP2006019045

申请日：2006-01-27

Applicant: Infineon Technologies Ag ,  インフィネオン テクノロジーズ アクチエンゲゼルシャフト

Inventor： MOUKARA MOLELA ,  PFORR RAINER ,  MUELDERS THOMAS ,  HENNIG MARIO ,  ZEILER KARSTEN

IPC: H01L21/027 ,  G03F1/00 ,  G03F7/20

CPC classification number: G03F7/70283 ,  G03F1/30 ,  G03F1/32 ,  G03F7/701 ,  G03F7/70108 ,  G03F7/70125

Abstract: PROBLEM TO BE SOLVED: To provide a structure, capable of simultaneously projecting a periodic line interval plane diffraction grating of a memory cell region and a peripheral structure pattern that is formed intricately. SOLUTION: The quality of image formation, when an image is simultaneously transmitted from a line interval plane diffraction grating and a peripheral structure including MUX row, is improved by using a quadrupole illumination. Four poles 14a to 14d of this quadrupole illumination extend in the longitudinal direction, and the axis 112 of the pole in the longitudinal direction is located vertical, with respect to the row direction of the grating row of a mask. Thus, the contrast of a structure image formation of the line interval planar diffraction grating, MEEF, and a process window can be improved. Meanwhile, the geometrical accuracy of the peripheral structure (particularly, MUX row) is stabilized by an illumination pupil 18, extending over the entire wide depth range of focus. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供能够同时投影存储单元区域的周期性行间隔平面衍射光栅和复杂形成的周边结构图案的结构。 解决方案：通过使用四极照明来改善图像从线间隔平面衍射光栅同时传输的图像形成和包括MUX行的外围结构的质量。 该四极照明的四极14a至14d在纵向方向上延伸，并且杆的纵向方向的轴线112相对于掩模的光栅行的行方向位于垂直方向。 因此，可以提高线间隔平面衍射光栅的结构图像形成的对比度，MEEF和处理窗口。 同时，周边结构（特别是MUX行）的几何精度通过在整个宽的深度聚焦范围上延伸的照明光瞳18而稳定。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2006013494A

公开(公告)日：2006-01-12

申请号：JP2005179958

申请日：2005-06-20

Applicant: Infineon Technologies Ag ,  インフィネオン テクノロジーズ アクチエンゲゼルシャフト

Inventor： KAMM FRANK-MICHAEL ,  PFORR RAINER ,  CRELL CHRISTIAN

IPC: H01L21/027 ,  G03C5/00 ,  G03F1/24 ,  G03H1/02 ,  G21K5/00

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  G03F1/24 ,  G03F1/70 ,  G21K2201/067

Abstract: PROBLEM TO BE SOLVED: To provide a reflective mask wherein flare effect is weakened and further the minimum thickness can be obtained, and a method of using the reflective mask.
SOLUTION: The reflective mask has a structure (20) for transferring a layout to a target substrate by using lithography. The reflective mask is particularly used in EUV lithography and further has a reflection multilayer structure (11) having at least a flare reduction layer (13') disposed partially at least on a bright field of the multilayer structure (11). Moreover, the method of using the reflective mask and the method of manufacturing the reflective mask are also provided.
COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种反射掩模，其中闪光效果被削弱，并且还可以获得最小厚度，以及使用该反射掩模的方法。 解决方案：反射掩模具有用于通过使用光刻将布局转印到目标基板的结构（20）。 反射掩模特别用于EUV光刻中，并且还具有反射多层结构（11），该反射多层结构（11）至少部分地至少设置在多层结构（11）的明场上的扩张减少层（13'）。 此外，还提供了使用反射掩模的方法和制造反射掩模的方法。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：WO0241076A3

公开(公告)日：2003-01-03

申请号：PCT/DE0104263

申请日：2001-11-14

Applicant: INFINEON TECHNOLOGIES AG ,  GRIESINGER UWE ,  HENNIG MARIO ,  KNOBLOCH JUERGEN ,  PFORR RAINER ,  VORWERK MANUEL

Inventor： GRIESINGER UWE ,  HENNIG MARIO ,  KNOBLOCH JUERGEN ,  PFORR RAINER ,  VORWERK MANUEL

IPC: G03F1/00 ,  G03F1/36 ,  G03F7/20 ,  H01L21/027 ,  G03F1/14

CPC classification number: G03F7/70441 ,  G03F1/29 ,  G03F7/70433

Abstract: According to the invention, auxiliary openings (2) are allocated to the openings (1) on a mask which are to be transferred onto a wafer. Said auxiliary openings have a phase shifting characteristic of preferably between 160 DEG and 200 DEG in relation to the openings (1), as well as a cross-section which is less than the limit dimension (31) for the printing of the projection device, so that the auxiliary openings (2) themselves cannot be printed onto the wafer. At the same time, however, they strengthen the contrast of the aerial image of an associated insulated or semi-insulated opening (1) on the wafer in particular. According to one form of embodiment, the distance of the auxiliary openings (2) from the opening (1) is greater than the resolution limit of the projection device, the opening being less than the coherence length of the light used for projection. The effect of the auxiliary openings consists of the phase-related use of the optical proximity effect. If the auxiliary openings (2) are arranged in a preferred direction, this effect can be used on quadratic openings (1) on the mask to produce elliptic structures (1') on a wafer. The result is a considerable widening of the process window for the projection of substrate contacting planes onto a wafer.

Abstract translation: 在掩模上的晶片上要传送开口（1）与辅助开口相关联的（2）。 这些具有优选为160°至200℃底层相移特性相对于所述孔（1）之间，以及一个位于该投影装置的横截面（21）的打印的限制尺寸（31）下方，使得辅助开口（2）本身不将 晶圆是geprintet。 同时提高了空间像的对比度，特别是相关联的晶片上的绝缘或半绝缘的开口（1）。 在一个实施例中，辅助开口（2）具有一个位于上述从开口（1）的投影装置的距离的分辨率极限，但其比用于投影的光的相干长度小。 它们的作用是在光学邻近效应的相位相关的利用率，从而可以在掩模在正方形开口的晶片上产生椭圆结构（1“）设定在一个优选的方向上的辅助开口（2）当被利用（1）。 其结果是在投影，特别Substratkontaktierungsebenen到晶片上的处理窗口的显著放大图。

公开(公告)号：WO03054627A2

公开(公告)日：2003-07-03

申请号：PCT/DE0204321

申请日：2002-11-25

Applicant: INFINEON TECHNOLOGIES AG ,  HENNIG MARIO ,  KOEHLE RODERICK ,  KUNKEL GERHARD ,  PFORR RAINER ,  VOIGT INA

Inventor： HENNIG MARIO ,  KOEHLE RODERICK ,  KUNKEL GERHARD ,  PFORR RAINER ,  VOIGT INA

IPC: G03F1/00 ,  G03F1/14

CPC classification number: G03F1/30

Abstract: The invention relates to a phase shifting mask (8) having symmetrical structures (1, 2) for the production of adjacent pairs (5) of structures (1', 2') on a semiconductor wafer (9), such as pairs of trench capacitors for memory modules, the structures (1, 2) inside the pair having a phase deviation difference of 180 DEG in relation to each other. The dimensions of the structures at the limit of resolution of the lighting system enable the influence of lens aberrations on the difference in line width created between the right and the left to be reduced. The invention also relates to a method for producing the structures (1', 2') on the wafer (9), consisting of a step in which the phase attribution to the right structure (2) or left structure (1) is selected according to the sign of the difference in line width when said difference is measured without phase attribution, using the same lighting system.

Abstract translation: 在一个相位罩（8）具有对称结构（1，2）用于制备接近半导体晶片（9），在结构上的相互对置的对（5）（1”，2' ），诸如对于具有结构的存储器器件严重电容器对（1，2） 该对对180°的彼此Phasenhubunterschied内。 当躺在由透镜像差的影响的曝光系统结构的尺寸的分辨率极限降低到所得到的左右线宽差。 一种用于结构的晶片（9）的制备（1”，2' ）的过程包括选择（2）或左结构（1），这取决于线的符号宽度差的权利，相位指定的demn步骤的使用时 没有相位分配相同的成像系统被测量。

公开(公告)号：WO0140868A3

公开(公告)日：2001-12-06

申请号：PCT/DE0004136

申请日：2000-11-22

Applicant: INFINEON TECHNOLOGIES AG ,  FRIEDRICH CHRISTOPH ,  HEISSMEIER MICHAEL ,  MOUKARA MOLELA ,  GRIESINGER UWE ,  LUDWIG BURKHARD ,  PFORR RAINER

Inventor： FRIEDRICH CHRISTOPH ,  HEISSMEIER MICHAEL ,  MOUKARA MOLELA ,  GRIESINGER UWE ,  LUDWIG BURKHARD ,  PFORR RAINER

IPC: G03F1/30 ,  G03F1/00 ,  H01L21/027

CPC classification number: G03F1/30

Abstract: The invention relates to an alternating phase mask (1) having a branched structure consisting of two opaque segments. Two transparent surfaces segments (5a, 5b) are arranged on both sides of said segments or the components thereof respectively. The surface segments are provided with phases that are displaced by 180 DEG +/- DELTA alpha , whereby DELTA alpha is not more than 25 DEG . The surface segments (5a, 5b) are separated by at least one transparent surface boundary segment (6) whose phase is situated between the phases of the adjacent surface segments (5a, 5b).

Abstract translation: 本发明涉及具有由两个不透明段组成的分支结构的交替相位掩模（1）。 在部分或其部分的两侧上布置两个透明表面部分（5a，5b），其具有相移180°+/-Δα的相位，其中Δα最大值为25°。 表面部分（5a，5b）由至少一个透明表面边界部分（6）分开，其相位位于相邻表面部分（5a，5b）的相位之间。

公开(公告)号：DE102006013459A1

公开(公告)日：2007-09-27

申请号：DE102006013459

申请日：2006-03-23

Applicant: INFINEON TECHNOLOGIES AG

Inventor： PFORR RAINER ,  TSCHISCHGALE JOERG ,  KUECHLER BERND ,  MUELDERS THOMAS

IPC: G03F7/20

Abstract: The arrangement has a lighting device (4) for producing radiations (1000), and a photo-mask (2) with a set of structural units (3), where the radiations transmit the structural units to a photo-resist (21) arranged on a substrate (5). An optical unit (6) has a surface (7), and causes a local variation of transmission rate of the radiations depending on an angle of incidence of the radiations with respect to the surface. The optical unit is arranged between the photo-mask and the substrate. An independent claim is also included for a method for transmitting structural units to a substrate.

公开(公告)号：DE10340611B4

公开(公告)日：2007-08-23

申请号：DE10340611

申请日：2003-08-29

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MOUKARA MOLELA ,  LUDWIG BURKHARD ,  THIELE JOERG ,  AHRENS MARCO ,  KOEHLE RODERICK ,  PFORR RAINER ,  MORGANA NICOLO

IPC: G03C5/00 ,  G03F1/00 ,  G03F7/20 ,  G03F9/00

Abstract: Lithographic mask contains angular structure element (0) formed by two opaque segments (01,2). Structure element contains convex section (A) facing over obtuse angle (alpha). Adjacent to angular element is transparent structure (T), consisting of two transparent segments (T1,2), formed axis-symmetrically to angle (alpha) bisecting line (WH). Along this line in convex section, transparent structure is wider than standard width. Lithographic mask contains angular structure element (0) formed by two opaque segments (01,2). Structure element contains convex section (A) facing over obtuse angle (alpha). Adjacent to angular element is transparent structure (T).Transparent structure is formed in two parts, i.e. consisting of two different transparent segments (T1,2), formed axis-symmetrically to angle (alpha) bisecting line (WH). Along this line in convex section, transparent structure is wider than used standard width of transparent segments.

公开(公告)号：DE10310136B4

公开(公告)日：2007-05-03

申请号：DE10310136

申请日：2003-03-07

Applicant: INFINEON TECHNOLOGIES AG

Inventor： DETTMANN WOLFGANG ,  HENNIG MARIO ,  PFORR RAINER ,  KOEHLE RODERICK ,  HOFSAES MARKUS ,  THIELE JOERG

IPC: G03F1/00 ,  G03F7/20

Abstract: Structure patterns mutually correlated on masks are projected onto the same photosensitive layer (R) on semiconductor wafer (W) in projection system. The first mask (P) contains opaque structure element (25) on first position so that its position projection onto wafer forms not-exposed region of lacquer in photo-sensitive layer. There is at least one second mask (T), allocated to first mask, with semi-transparent region (23') on second position of second mask, coinciding with first position on first mask, whose image on wafer illuminates at least part of lacquer region in photo-sensitive layer. Independent claims are included for method of producing set of several masks.

公开(公告)号：DE102005003905B4

公开(公告)日：2007-04-12

申请号：DE102005003905

申请日：2005-01-27

Applicant: INFINEON TECHNOLOGIES AG

Inventor： PFORR RAINER ,  MOUKARA MOLELA ,  MUELDERS THOMAS ,  HENNIG MARIO ,  ZEILER KARSTEN

IPC: G03F7/20 ,  G03F1/00

Abstract: An improvement of the imaging quality with simultaneous transfer of line-space gratings and peripheral structures including a MUX space is achieved using a quadrupole illumination whose poles are formed in elongate fashion and whose longitudinal axes are arranged perpendicular to the orientation of the lines of the line-space grating arranged on a mask. The structure imaging of the line-space grating is improved with regard to contrast, MEEF, and process window, while the geometrical fidelity of the peripheral structure, in particular of the MUX space, is stabilized over a wide depth of field range.

公开(公告)号：DE102004031079A1

公开(公告)日：2006-01-19

申请号：DE102004031079

申请日：2004-06-22

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KAMM FRANK-MICHAEL ,  PFORR RAINER ,  CRELL CHRISTIAN

IPC: G03C5/00 ,  G03F1/24 ,  G03H1/02 ,  G21K5/00

Abstract: A reflection mask that includes a structure (20) for lithographically transferring a layout onto a target substrate, in particular for use in EUV lithography, and a reflective multilayer structure (11). At least one flare reduction layer (13', 17) is at least partly arranged on a bright field of the multilayer structure (11).