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    2.
    发明专利
    未知

    公开(公告)号：DE10356699A1

    公开(公告)日：2005-09-08

    申请号：DE10356699

    申请日：2003-11-28

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： CRELL CHRISTIAN ,  BAUCH LOTHAR ,  MOELLER HOLGER ,  ZIEBOLD RALF

    IPC: G03B27/42 ,  G03F1/00 ,  G03F7/20 ,  G03F9/00

    Abstract: Lithography mask having a structure for the fabrication of semiconductor components, in particular memory components, for a direction-dependent exposure device, featuring at least one auxiliary structure ( 1 ) for minimizing scattered light, the auxiliary structure ( 1 ) essentially being arranged in a low-resolution exposure direction of the direction-dependent exposure device ( 11, 11 a, 11 b) for the mask ( 10, 10 a , 10 b). A means for reducing scattered light is thus created by the auxiliary structure in a simple manner.

    3.
    发明专利
    未知

    公开(公告)号：DE10327613B4

    公开(公告)日：2007-10-31

    申请号：DE10327613

    申请日：2003-06-18

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： KUNKEL GERHARD ,  ZIEBOLD RALF

    IPC: G03C5/00 ,  G03F1/00 ,  G03F9/00

    Abstract: Formation of preferably square hole (16) on alternating phase mask (1) where hole has two partial regions (12,14) on which light ray impinges with different phase fluctuations involving: preparation of transparent substrate (18) with surface having opaque layer (10), which has two layers (32) in etch process, formation of hole in layer (32), etching so that region (12) is exposed, further etching, widening hole in layer (32), and final layer (32) removal.

    Reducing critical dimension variations caused by scattered light in functional structures formed by photolithographic imaging comprises using two masks, one with a reduced bright-field content
    8.
    发明专利
    Reducing critical dimension variations caused by scattered light in functional structures formed by photolithographic imaging comprises using two masks, one with a reduced bright-field content 未知

    公开(公告)号：DE102004057759A1

    公开(公告)日：2006-06-08

    申请号：DE102004057759

    申请日：2004-11-30

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： NOELSCHER CHRISTOPH ,  PFORR RAINER ,  KAMM FRANK-MICHAEL ,  ZIEBOLD RALF ,  HENNIG MARIO

    IPC: G03F7/20 ,  G03F1/00 ,  G03F1/36

    Abstract: Reducing critical dimension (CD) variations caused by scattered light in functional structures formed in a photoresist by photolithographic imaging through a mask comprises separating a target layout into two partial layouts, providing two masks (M1, M2) according to the partial layouts, where M1 has a reduced bright-field content; imaging the structures of M1 in the photoresist; and imaging the structures of M2 in the photoresist. Reducing critical dimension (CD) variations caused by scattered light in functional structures formed in a photoresist by photolithographic imaging through a mask, where the structures are arranged according to a target layout in sections of the mask adjacent to bright-field sections, comprises separating the target layout into two partial layouts, providing two masks (M1, M2) according to the partial layouts, where M1 has a reduced bright-field content and M2 has an arrangement of structures that will result in the target layout at the end of the process; imaging the structures of M1 in the photoresist, whereby CD variations in the structures are reduced because of the reduced bright-field content; and imaging the structures of M2 in the photoresist. Independent claims are also included for: (1) mask M1 for carrying out the above process, where the bright-field sections (21) adjacent to the sections (2) with the functional structures (3) are provided with opaque or semitransparent auxiliary sections (31); (2) mask M2 for carrying out the above process, where the structures in M2 are formed by opaque sections in or on a transparent support.

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