公开(公告)号：DE59915200D1

公开(公告)日：2010-10-21

申请号：DE59915200

申请日：1999-09-17

Applicant: INFINEON TECHNOLOGIES AG

Inventor： STENGL REINHARD DR ,  SCHAEFER HERBERT DR ,  REISINGER HANS DR ,  LEHMANN VOLKER DR ,  FRANOSCH MARTIN ,  LANGE GERRIT DR ,  WENDT HERMANN DR

IPC: H01L21/8247 ,  H01L27/102 ,  H01L21/8229 ,  H01L27/115 ,  H01L29/788 ,  H01L29/792

公开(公告)号：DE59914356D1

公开(公告)日：2007-07-12

申请号：DE59914356

申请日：1999-09-17

Applicant: INFINEON TECHNOLOGIES AG

Inventor： REISINGER HANS DR ,  STENGL REINHARD DR ,  FRANOSCH MARTIN ,  LEHMANN VOLKER DR ,  SCHAEFER HERBERT DR ,  LANGE GERRIT DR ,  WENDT HERMANN DR

IPC: H01L21/225 ,  H01L21/3105 ,  H01L21/321 ,  H01L21/329 ,  H01L21/768 ,  H01L21/8239 ,  H01L27/105

Abstract: Doped region production involves thermally diffusing dopant from a semiconductor layer through an insulating interlayer (40, 70) and then making the interlayer (40, 70) electrically conductive. A doped region is produced by: (a) successively applying an insulating interlayer (40, 70) and a first conductivity type doped semiconductor layer onto a semiconductor substrate (15); (b) annealing the substrate so that dopant diffuses from the semiconductor layer through the interlayer (40, 70) into the substrate to form one or more first conductivity type doped regions (55, 80); and (c) altering the electrical conductivity of the interlayer (40, 70) to produce electrical contact between the doped region (55, 80) and the semiconductor layer. Preferred Features: The interlayer (40, 70) consists of silicon oxide and is made conductive by a voltage or current pulse.