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    1.
    发明专利
    未知

    公开(公告)号：DE59914356D1

    公开(公告)日：2007-07-12

    申请号：DE59914356

    申请日：1999-09-17

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： REISINGER HANS DR ,  STENGL REINHARD DR ,  FRANOSCH MARTIN ,  LEHMANN VOLKER DR ,  SCHAEFER HERBERT DR ,  LANGE GERRIT DR ,  WENDT HERMANN DR

    IPC: H01L21/225 ,  H01L21/3105 ,  H01L21/321 ,  H01L21/329 ,  H01L21/768 ,  H01L21/8239 ,  H01L27/105

    Abstract: Doped region production involves thermally diffusing dopant from a semiconductor layer through an insulating interlayer (40, 70) and then making the interlayer (40, 70) electrically conductive. A doped region is produced by: (a) successively applying an insulating interlayer (40, 70) and a first conductivity type doped semiconductor layer onto a semiconductor substrate (15); (b) annealing the substrate so that dopant diffuses from the semiconductor layer through the interlayer (40, 70) into the substrate to form one or more first conductivity type doped regions (55, 80); and (c) altering the electrical conductivity of the interlayer (40, 70) to produce electrical contact between the doped region (55, 80) and the semiconductor layer. Preferred Features: The interlayer (40, 70) consists of silicon oxide and is made conductive by a voltage or current pulse.

    2.
    发明专利
    未知

    公开(公告)号：AT215420T

    公开(公告)日：2002-04-15

    申请号：AT97112960

    申请日：1997-07-28

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： MELZNER HANNO ,  WENDT HERMANN DR

    IPC: B24B7/22 ,  B24B19/02 ,  B24B37/04 ,  B24B41/06 ,  B24D9/04 ,  H01L21/304

    Abstract: In a wafer (3) chemical-mechanical polishing unit having a rotating disc (1) with a polishing pad (2), a polishing liquid supply (9) and a wafer holder (4), the disc axis (21) extends parallel to the wafer surface and the polishing pad (2) is provided on the cylindrical disc edge face for forming a trench of defined cross-section in the wafer (3). Preferably, the polishing pad (2) comprises polyurethane foam or textile material.

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