公开(公告)号：DE102005009018A1

公开(公告)日：2006-09-07

申请号：DE102005009018

申请日：2005-02-28

Applicant: INFINEON TECHNOLOGIES AG

Inventor： JAHNKE ANDREAS ,  KLINGBEIL PATRICK ,  ZIEBOLD RALF ,  VOELKEL LARS ,  LOPEZ GOMEZ ALBERTO ,  MARSCHNER THOMAS

IPC: G01M11/02 ,  G03F1/00 ,  G03F7/00

Abstract: The method involves forming test structures (2) on a photomask (1), in which each test structure comprises of measuring structures (21) with neighboring structures (22). The measuring structures and neighboring structures are formed using photoresist that influences the scattered light generated by a photolithographic imaging mechanism. The CD (critical dimension) measurements of the measuring structures are determined. The measured CDs are then evaluated as a function of the neighboring structures to evaluate the generated scattered light : An independent claim is included for the photomask used in testing the pholithographic imaging mechanism.