公开(公告)号：DE102004030122A1

公开(公告)日：2006-01-19

申请号：DE102004030122

申请日：2004-06-22

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MARSCHNER THOMAS

IPC: G01N23/225 ,  H01L21/66

Abstract: A structural element is scanned for a regular structure on a carrier substrate with electromagnetic radiation in a first operating mode at a high resolution by picking up radiation reflected from the carrier substrate so as to get a pattern for a measuring signature in the structural element.

公开(公告)号：DE102004004597A1

公开(公告)日：2005-08-25

申请号：DE102004004597

申请日：2004-01-29

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MARSCHNER THOMAS

IPC: G01B15/04 ,  G03F7/20 ,  H01L21/66 ,  H01L21/8242

Abstract: A method for measuring a semiconductor wafer structure involves initially preparing a semiconductor wafer with a structure comprising several equally spaced protuberances between which are formed gaps on the front face of the wafer, preparing a raster electron microscope with electron beam source and detector, preparing a substrate holder for accommodating the semiconductor wafer, irradiating the front face of the wafer in a measurement window, detecting the electrons scattered on the structure in the measuring window to obtain an intensity profile of the electrons, tilting the electron beam in second direction, irradiating the front face of the semiconductor wafer with the electron beam, detecting the scattered electrons in the detector to determine a second intensity profile of the scattered electrons and then determining the position of the gaps from the difference of the two intensity profiles. An independent claim is given for an arrangement for measuring a structure with a raster electron microscope and a semiconductor wafer.

公开(公告)号：DE102005009018A1

公开(公告)日：2006-09-07

申请号：DE102005009018

申请日：2005-02-28

Applicant: INFINEON TECHNOLOGIES AG

Inventor： JAHNKE ANDREAS ,  KLINGBEIL PATRICK ,  ZIEBOLD RALF ,  VOELKEL LARS ,  LOPEZ GOMEZ ALBERTO ,  MARSCHNER THOMAS

IPC: G01M11/02 ,  G03F1/00 ,  G03F7/00

Abstract: The method involves forming test structures (2) on a photomask (1), in which each test structure comprises of measuring structures (21) with neighboring structures (22). The measuring structures and neighboring structures are formed using photoresist that influences the scattered light generated by a photolithographic imaging mechanism. The CD (critical dimension) measurements of the measuring structures are determined. The measured CDs are then evaluated as a function of the neighboring structures to evaluate the generated scattered light : An independent claim is included for the photomask used in testing the pholithographic imaging mechanism.

公开(公告)号：DE102004030122B4

公开(公告)日：2007-03-29

申请号：DE102004030122

申请日：2004-06-22

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MARSCHNER THOMAS

IPC: G01N23/225 ,  H01L21/66

公开(公告)号：DE102005005102B3

公开(公告)日：2006-07-20

申请号：DE102005005102

申请日：2005-02-04

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MARSCHNER THOMAS ,  MUELDERS THOMAS ,  NOELSCHER CHRISTOPH

IPC: G03F1/00

Abstract: The mask has a radiation permeable substrate with a main structure (21) and auxiliary structures (22) parallel to each other. The main and auxiliary structures are made from partial radiation impermeable material. The auxiliary structures are arranged in two rows, where a minimum distance exists between the auxiliary structures in each row. The distance between the structures deviates by a maximum of 10 percent from an average value.

公开(公告)号：DE102005004599A1

公开(公告)日：2006-08-10

申请号：DE102005004599

申请日：2005-02-01

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MARSCHNER THOMAS

IPC: H01L21/66 ,  G01B11/24 ,  H01L23/544

Abstract: The method involves verifying a measuring result with a predetermined range of a parameter. A measuring rule is applied to an intensity profile in a processing unit, if the measurement result lies outside of the predetermined range. A target object is scanned in the intensity profile and another parameter is determined as another measurement result. One of the measurement results is stored in the processing unit. Independent claims are also included for the following: (1) a device for measurement of measuring objects on a semiconductor wafer (2) an application of a measurement method in a manufacturing plant for a semiconductor wafer.