公开(公告)号：DE102006032251A1

公开(公告)日：2008-01-17

申请号：DE102006032251

申请日：2006-07-12

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MAYER THORSTEN ,  HEDLER HARRY ,  BRUNNBAUER MARKUS

IPC: H01L21/60 ,  H01L23/48

公开(公告)号：DE10239310B4

公开(公告)日：2005-11-03

申请号：DE10239310

申请日：2002-08-27

Applicant: INFINEON TECHNOLOGIES AG

Inventor： FISCHER HERMANN ,  WERNER WOLFGANG ,  MAYER THORSTEN ,  KANERT WERNER ,  FUGGER JOSEF

IPC: H01L29/417 ,  H01L29/78 ,  H01L21/28 ,  H01L21/336

公开(公告)号：DE10239310A1

公开(公告)日：2004-03-25

申请号：DE10239310

申请日：2002-08-27

Applicant: INFINEON TECHNOLOGIES AG

Inventor： FISCHER HERMANN ,  WERNER WOLFGANG ,  MAYER THORSTEN ,  KANERT WERNER ,  FUGGER JOSEF

IPC: H01L29/417 ,  H01L29/78 ,  H01L21/28 ,  H01L21/336

Abstract: Production of conducting connection between first trenched layer (2) of first conductivity arranged at distance from front side (101) of semiconductor body (100) and second layer (4) of second conductivity comprises forming recess from front side to first layer, and doping via recess into boundary region between first and second layer to produce strongly doped connecting zone (3). Production of an electrically conducting connection between a first trenched layer (2) of first conductivity arranged at a distance from a front side (101) of a semiconductor body (100) and a second layer (4) of a second conductivity comprises forming a recess (6) extending from the front side up to the first layer, and introducing doping atoms of first and second conductivity via the recess into a boundary region between the first layer and the second layer to produce a connecting zone (3) in the boundary region which is more strongly doped than the first layer forming a tunnel diode with the second layer.