公开(公告)号：DE10104776A1

公开(公告)日：2002-08-22

申请号：DE10104776

申请日：2001-02-02

Applicant: INFINEON TECHNOLOGIES AG

Inventor： STENGL REINHARD ,  MEISTER THOMAS F ,  SCHAEFER HERBERT ,  FRANOSCH MARTIN

IPC: H01L21/331 ,  H01L29/737 ,  H01L29/73 ,  H01L29/732

Abstract: The invention relates to a method for producing a bipolar transistor having low base terminal resistance, a low defect density, and improved scalability, scalability referring to both the lateral scaling of the emitter window and the vertical scaling of the base width (low temperature budget). The temperature budget can be maintained at a low level in the base area, as no implantations are required in order to reduce the base terminal resistance. Furthermore, the difficulties related to point defects are largely avoided.

公开(公告)号：DE19958062C2

公开(公告)日：2002-06-06

申请号：DE19958062

申请日：1999-12-02

Applicant: INFINEON TECHNOLOGIES AG

Inventor： STENGL REINHARD ,  MEISTER THOMAS F ,  SCHAEFER HERBERT ,  FRANOSCH MARTIN ,  BOECK JOSEF ,  KLEIN WOLFGANG

IPC: H01L21/331 ,  H01L29/732 ,  H01L21/8222 ,  H01L27/082

Abstract: The bipolar transistor is produced such that a connection region of its base is provided with a silicide layer, so that a base resistance of the bipolar transistor is small. No silicide layer is produced between an emitter and an emitter contact and between a connection region of a collector and a collector contact. The base is produced by in situ-doped epitaxy in a region in which a first insulating layer is removed by isotropic etching such that the connection region of the base which is arranged on the first insulating layer is undercut. In order to avoid defects of a substrate in which the bipolar transistor is partly produced, isotropic etching is used for the patterning of auxiliary layers, whereby etching is selective with respect to auxiliary layers lying above, which are patterned by anisotropic etching.

公开(公告)号：DE19958062A1

公开(公告)日：2001-07-05

申请号：DE19958062

申请日：1999-12-02

Applicant: INFINEON TECHNOLOGIES AG

Inventor： STENGL REINHARD ,  MEISTER THOMAS F ,  SCHAEFER HERBERT ,  FRANOSCH MARTIN ,  BOECK JOSEF ,  KLEIN WOLFGANG

IPC: H01L21/331 ,  H01L29/732 ,  H01L27/082

Abstract: The bipolar transistor is produced such that a connection region of its base is provided with a silicide layer, so that a base resistance of the bipolar transistor is small. No silicide layer is produced between an emitter and an emitter contact and between a connection region of a collector and a collector contact. The base is produced by in situ-doped epitaxy in a region in which a first insulating layer is removed by isotropic etching such that the connection region of the base which is arranged on the first insulating layer is undercut. In order to avoid defects of a substrate in which the bipolar transistor is partly produced, isotropic etching is used for the patterning of auxiliary layers, whereby etching is selective with respect to auxiliary layers lying above, which are patterned by anisotropic etching.