公开(公告)号：DE10350689A1

公开(公告)日：2005-06-09

申请号：DE10350689

申请日：2003-10-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： O'RIAIN RYAN ,  RADECKER JOERG ,  SPERLICH HANS-PETER

IPC: H01L21/762

Abstract: Production of insulator structures in a semiconductor substrate comprises inserting insulating trenches into the substrate from the substrate surface, depositing an insulating material in a high density plasma-promoted process in which the plasma contains a halogen-containing gas, and treating the insulating material with a silicon-free hydrogen-containing plasma.

公开(公告)号：DE10311312A1

公开(公告)日：2004-10-28

申请号：DE10311312

申请日：2003-03-14

Applicant: INFINEON TECHNOLOGIES AG

Inventor： RADECKER JOERG

IPC: H01L21/762

Abstract: Production of insulator structures in a semiconductor substrate (1) comprises forming a barrier layer (32) blocking an exchange of the additive with the substrate before a main layer (33) is deposited. An independent claim is also included for an insulator structure produced by the above process.

公开(公告)号：DE10249649A1

公开(公告)日：2004-05-13

申请号：DE10249649

申请日：2002-10-24

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KLIPP ANDREAS ,  RADECKER JOERG ,  SPERLICH HANS-PETER

IPC: H01L21/316 ,  H01L21/762 ,  H01L21/314 ,  H01L21/3105

Abstract: Production of a shallow trench isolation (4) comprises filling a recess (2) in a substrate (1) with a filler (5). The recess has an aspect ratio of more than 5: 1 (5.0) and is partially filled using a flow-fill process followed by plasma treatment.

公开(公告)号：DE10350689B4

公开(公告)日：2007-06-21

申请号：DE10350689

申请日：2003-10-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： O'RIAIN RYAN ,  RADECKER JOERG ,  SPERLICH HANS-PETER

IPC: H01L21/762

公开(公告)号：DE10141841C1

公开(公告)日：2003-03-06

申请号：DE10141841

申请日：2001-08-27

Applicant: INFINEON TECHNOLOGIES AG

Inventor： EFFERENN DIRK ,  MOLL HANS-PETER ,  WICH-GLASEN ANDREAS ,  GRUNING VON SCHWERIN ULRIKE ,  RADECKER JOERG

IPC: H01L21/027 ,  H01L21/033 ,  H01L21/321 ,  H01L21/308 ,  H01L21/311 ,  H01L21/768

Abstract: A description is given of a method for a selective masking of a structure with a small structure surface with respect to a structure with a larger structure surface. To that end, the structures are filled with a covering layer. The covering layer is formed with a larger thickness above the first structure, which has the larger structure surface, than above the second structure. Afterward, the covering layer is removed by a homogeneous removal method, so that first the structure surface of the second structure is uncovered. A simple self-aligning method for fabricating a mask for uncovering the second structure is thus provided.

公开(公告)号：DE10120766C1

公开(公告)日：2002-10-02

申请号：DE10120766

申请日：2001-04-27

Applicant: INFINEON TECHNOLOGIES AG

Inventor： ROEMER ANDREAS ,  HOLLATZ MARK ,  RADECKER JOERG

IPC: C23C16/04 ,  C23C16/507 ,  H01L21/3105 ,  H01L21/316 ,  H01L21/762 ,  C23C16/505 ,  C23F4/00 ,  H01L21/311

Abstract: Process for depositing a layer in a reactor (1) comprises feeding layer-forming gas, especially a sputtering gas, into the reactor; igniting a plasma (13) in the reactor; growing a layer on a deposition surface (14) by the plasma; partially removing the layer deposited on the deposition surface during a deposition process with simultaneous pure sputtering; removing non-horizontal surface regions of the deposited layer; and subjecting to pure sputtering. Preferred Features: The sputtering gas is a mixture of oxygen and argon. Silicon dioxide is deposited from silane gas. During the combined deposition and sputtering process and during the pure sputtering process, a pressure of 0.26-1.33 Pa prevails in the reactor.

公开(公告)号：DE10311312B4

公开(公告)日：2007-08-16

申请号：DE10311312

申请日：2003-03-14

Applicant: INFINEON TECHNOLOGIES AG

Inventor： RADECKER JOERG

IPC: H01L21/762

公开(公告)号：DE10313584A1

公开(公告)日：2004-08-19

申请号：DE10313584

申请日：2003-03-26

Applicant: INFINEON TECHNOLOGIES AG

Inventor： O'RIAIN LINCOLN ,  RADECKER JOERG

IPC: H01L21/762

Abstract: Process for at least partial trough filling by means of a high density plasma (HDP) process, where a number of troughs (G1-G5) in a wafer substrate (1) are filled with a filler material (111-115) at a process pressure of at least 50 mTorr.

公开(公告)号：DE102004055649A1

公开(公告)日：2006-05-24

申请号：DE102004055649

申请日：2004-11-12

Applicant: INFINEON TECHNOLOGIES AG

Inventor： RADECKER JOERG ,  SCHMITT FLORIAN ,  SPERLICH HANS-PETER

IPC: H01L21/762

Abstract: Trench (30) is filled with a filling oxide (200), which has a slower etching rate than an oxide layer (80) coating the trench. The filling oxide and oxide layer are subjected to an etching process. During this, an upper section (210) of the trench side wall (120) adjacent to the surface (20) of the semiconductor structure (10), is freed from the oxide layer. This forms an etching step (220) between the filling oxide and the oxide layer. The trench is coated with a conformal oxide layer. A suitable filling material is polysilicon. An oxide insulant (310) is deposited from the gas phase or a fluid. The etching mask layer is a nitrite.

公开(公告)号：DE10348021A1

公开(公告)日：2005-05-25

申请号：DE10348021

申请日：2003-10-15

Applicant: INFINEON TECHNOLOGIES AG

Inventor： RADECKER JOERG ,  O'RIAIN LINCOLN

IPC: H01L21/762 ,  H01L29/94