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    Method to control sequence of measurement steps for aligning a semiconductor wafer in exposure system
    1.
    发明专利
    Method to control sequence of measurement steps for aligning a semiconductor wafer in exposure system 审中-公开
    控制接触系统中半导体波形的测量步骤顺序的方法

    公开(公告)号：JP2005101534A

    公开(公告)日：2005-04-14

    申请号：JP2004197152

    申请日：2004-07-02

    Applicant: Infineon Technologies Ag ,  インフィネオン テクノロジーズ アクチエンゲゼルシャフト

    Inventor： SCHUMANN JOERG ,  SEYFERT JENS

    IPC: H01L21/027 ,  G03F7/20 ,  G03F9/00

    CPC classification number: G03F9/7046

    Abstract: PROBLEM TO BE SOLVED: To reduce a percentage of time used to move a wafer stage during an alignment.
    SOLUTION: The method to control the sequence of measurement steps for aligning a semiconductor wafer includes steps of: (a) preparing a semiconductor wafer in exposure equipment; (b) starting a first alignment measurement step; (c) selecting the first number of exposure fields to determine the first sequence; (d) moving the semiconductor wafer to an alignment position; (e) storing the alignment position of the exposure field last moved; (f) terminating the first alignment measurement step, starting a second alignment measurement step, selecting the exposure field whose position was stored, further selecting an exposure field to determine a second sequence, and repeating the steps (d) to (f) for the alignment measurement step.
    COPYRIGHT: (C)2005,JPO&NCIPI

    Abstract translation: 要解决的问题：减少在对准期间移动晶片台的时间百分比。 解决方案：控制用于对准半导体晶片的测量步骤的顺序的方法包括以下步骤：（a）在曝光设备中制备半导体晶片; （b）开始第一对准测量步骤; （c）选择第一数目的曝光场以确定第一序列; （d）将半导体晶片移动到对准位置; （e）存储最后移动的曝光场的对准位置; （f）终止第一对准测量步骤，开始第二对准测量步骤，选择存储位置的曝光区域，进一步选择曝光区域以确定第二序列，并重复步骤（d）至（f） 对准测量步骤。 版权所有（C）2005，JPO＆NCIPI

    RESISTIVE MEMORY
    2.
    发明申请
    RESISTIVE MEMORY 审中-公开
    电阻式工作记忆

    公开(公告)号：WO2006013160A3

    公开(公告)日：2006-10-05

    申请号：PCT/EP2005053546

    申请日：2005-07-21

    Applicant: INFINEON TECHNOLOGIES AG ,  WALTER ANDREAS ,  SEZI RECAI ,  ENGL REIMUND ,  MALTENBERGER ANNA ,  SCHUMANN JOERG ,  WEITZ THOMAS

    Inventor： WALTER ANDREAS ,  SEZI RECAI ,  ENGL REIMUND ,  MALTENBERGER ANNA ,  SCHUMANN JOERG ,  WEITZ THOMAS

    IPC: H01L51/30 ,  H01L27/28

    CPC classification number: H01L51/0052 ,  B82Y10/00 ,  G11C13/0014 ,  H01B1/121 ,  H01L27/11502 ,  H01L27/285 ,  H01L51/0036 ,  H01L51/0051

    Abstract: The invention relates to novel memory cells, comprising two electrodes and a layer arranged between the same, made from an active material, comprising (a) a compound of the structure given in general formula (I), where R 1 to R 2 independently = -H, -(CH 2 ) m CH 3 , -phenyl, -O-(CH 2 ) m CH 3 , -O-phenyl, -S(CH 2 ) m CH 3 , -S-aryl, -NR 3 R 4 , -SR or a halide, where R 1 and R 2 can together form a ring and where R 3 and R 4 independently = -H, preferably 1-10 C alkyl, -aryl, -heteroaryl, m = 0 or a whole number from 1-10 and n = a whole number from 2 to 1000 and (b) a compound of general formula (II): where R 5 to R 12 independently = -H, -(CH 2 ) m CH 3 , -phenyl, -0-(CH 2 ) m CH 3 , -O-phenyl, -CO(CH 2 ) m CH 3 , -halogen, -CN and/or -NO 2 , where R 5 and R 6 , or R 6 and R 7 , R 7 and R 8 , R 9 and R 10 , R 10 and R 11 and/or R 11 and R 12 can together form a ring, m having the meaning already given. The invention further relates to a method for production of said cells and the novel application of a composition which may be used as active material for the memory cells.

    Abstract translation: 有提供具有两个电极新存储单元和活性物质的包含（a）通式（I）的化合物所示结构的插层：（I）其中R 1 至R 2 彼此独立地可以具有下列含义：-H， - （CH 2 ）米 CH 3 ， - 苯基，-O-（CH 2 ）米 CH 3 ，-O-苯基，-S（CH 2 ）米 CH 3 ，-S-芳基，-NR 3 - [R 4 ，-SR或 卤素原子，其中R 1 和R 2 可一起形成环，和其中R 3 和R 4 独立地 -H，烷基，优选表示具有1-10个碳原子，芳基，杂芳基，m为0或在1-10范围内的整数，n = a是整数2至1000 ; 和（b）通式（II）化合物：其中R 5 至R 12 彼此独立地可以具有下列含义：-H， - （CH 2 ）米 CH 3 ，苯基，-O-（CH 2 ）米 CH < SUB> 3 ，-O-苯基， - CO（CH 2 ）米 CH 3 ， - 卤素，-CN，和 /或-NO 2 其中R 5 和R 6 或R 6 和R 7 < / SUB>，R 7 和R 8 ，R 9 和R 10 ，R 10 < / SUB>和R 11 和/或R 11 和R 12 可以一起形成一个环，其中m具有上面给出的含义，其包括 ， 此外，提供了用于制备本发明的细胞的方法和新的使用，其可被用作用于存储单元中的活性物质的组合物。

    METHOD FOR LITHOGRAPHICALLY STRUCTURING A SUBSTRATE, AND LACQUER SYSTEM
    3.
    发明申请
    METHOD FOR LITHOGRAPHICALLY STRUCTURING A SUBSTRATE, AND LACQUER SYSTEM 审中-公开
    一种基材和涂料系统的光刻结构的方法

    公开(公告)号：WO2004025369A3

    公开(公告)日：2004-07-15

    申请号：PCT/DE0302880

    申请日：2003-08-27

    Applicant: INFINEON TECHNOLOGIES AG ,  ELIAN KLAUS ,  SCHUMANN JOERG

    Inventor： ELIAN KLAUS ,  SCHUMANN JOERG

    IPC: G03F1/00 ,  G03F7/09 ,  G03F7/20 ,  H01J37/317 ,  H01L51/30

    CPC classification number: G03F1/26 ,  G03F7/093 ,  G03F7/094

    Abstract: The invention relates to a method for lithographically structuring a substrate (10) by means of an electron beam, particularly for producing photomasks. Said method is characterized by the fact that first at least one electrically conductive, water-insoluble lower lacquer layer (1) is applied to the substrate (10), followed by at least one upper lacquer layer (2) made of electron beam-sensitive photoresist so as to create a lacquer system (1, 2). Such a lacquer system allows negative charges to discharge, whereby the electron beam is prevented from being deflected due to charging effects.

    Abstract translation: 发明的名称：本发明通过电子束的手段涉及一种衬底（10）的光刻图案化的方法，特别是用于生产光掩模的，其特征在于，在所述基板上建立的涂布系统的（1，2）（10）第一至少一个电 导电的不溶于水的下层漆层（1），然后涂覆至少一层电子束敏感的光刻胶的上漆层（2）。 利用这种涂料系统，负电荷可以流走，从而避免了电子束的偏转。

    10.
    发明专利
    未知

    公开(公告)号：DE102004037150B4

    公开(公告)日：2006-08-24

    申请号：DE102004037150

    申请日：2004-07-30

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： WALTER ANDREAS ,  WEITZ THOMAS ,  ENGL REIMUND ,  SEZI RECAI ,  MALTENBERGER ANNA ,  SCHUMANN JOERG

    IPC: H01L51/05 ,  C07C255/10 ,  C07C255/34 ,  C07C255/35 ,  C07C325/02 ,  G11C13/00

    Abstract: An integrated circuit having resistive memory is disclosed. In one embodiment, the memory includes novel memory cells which have two electrodes and a layer arranged in between and including an active material which contains [1,2]dithiolo[4,3-[c]-1,2-dithiol-3,6-dithione, (2,4,7-trinitro-9-fluorenylidene)malonodinitrile and a polymer are disclosed. In one embodiment, a process for the production of the cells according to the invention is provided, as well as the novel use of a composition which can be used as active material for the memory cells.

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