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    RESISTIVE MEMORY
    1.
    发明申请
    RESISTIVE MEMORY 审中-公开
    电阻式工作记忆

    公开(公告)号：WO2006013160A3

    公开(公告)日：2006-10-05

    申请号：PCT/EP2005053546

    申请日：2005-07-21

    Applicant: INFINEON TECHNOLOGIES AG ,  WALTER ANDREAS ,  SEZI RECAI ,  ENGL REIMUND ,  MALTENBERGER ANNA ,  SCHUMANN JOERG ,  WEITZ THOMAS

    Inventor： WALTER ANDREAS ,  SEZI RECAI ,  ENGL REIMUND ,  MALTENBERGER ANNA ,  SCHUMANN JOERG ,  WEITZ THOMAS

    IPC: H01L51/30 ,  H01L27/28

    CPC classification number: H01L51/0052 ,  B82Y10/00 ,  G11C13/0014 ,  H01B1/121 ,  H01L27/11502 ,  H01L27/285 ,  H01L51/0036 ,  H01L51/0051

    Abstract: The invention relates to novel memory cells, comprising two electrodes and a layer arranged between the same, made from an active material, comprising (a) a compound of the structure given in general formula (I), where R 1 to R 2 independently = -H, -(CH 2 ) m CH 3 , -phenyl, -O-(CH 2 ) m CH 3 , -O-phenyl, -S(CH 2 ) m CH 3 , -S-aryl, -NR 3 R 4 , -SR or a halide, where R 1 and R 2 can together form a ring and where R 3 and R 4 independently = -H, preferably 1-10 C alkyl, -aryl, -heteroaryl, m = 0 or a whole number from 1-10 and n = a whole number from 2 to 1000 and (b) a compound of general formula (II): where R 5 to R 12 independently = -H, -(CH 2 ) m CH 3 , -phenyl, -0-(CH 2 ) m CH 3 , -O-phenyl, -CO(CH 2 ) m CH 3 , -halogen, -CN and/or -NO 2 , where R 5 and R 6 , or R 6 and R 7 , R 7 and R 8 , R 9 and R 10 , R 10 and R 11 and/or R 11 and R 12 can together form a ring, m having the meaning already given. The invention further relates to a method for production of said cells and the novel application of a composition which may be used as active material for the memory cells.

    Abstract translation: 有提供具有两个电极新存储单元和活性物质的包含（a）通式（I）的化合物所示结构的插层：（I）其中R 1 至R 2 彼此独立地可以具有下列含义：-H， - （CH 2 ）米 CH 3 ， - 苯基，-O-（CH 2 ）米 CH 3 ，-O-苯基，-S（CH 2 ）米 CH 3 ，-S-芳基，-NR 3 - [R 4 ，-SR或 卤素原子，其中R 1 和R 2 可一起形成环，和其中R 3 和R 4 独立地 -H，烷基，优选表示具有1-10个碳原子，芳基，杂芳基，m为0或在1-10范围内的整数，n = a是整数2至1000 ; 和（b）通式（II）化合物：其中R 5 至R 12 彼此独立地可以具有下列含义：-H， - （CH 2 ）米 CH 3 ，苯基，-O-（CH 2 ）米 CH < SUB> 3 ，-O-苯基， - CO（CH 2 ）米 CH 3 ， - 卤素，-CN，和 /或-NO 2 其中R 5 和R 6 或R 6 和R 7 < / SUB>，R 7 和R 8 ，R 9 和R 10 ，R 10 < / SUB>和R 11 和/或R 11 和R 12 可以一起形成一个环，其中m具有上面给出的含义，其包括 ， 此外，提供了用于制备本发明的细胞的方法和新的使用，其可被用作用于存储单元中的活性物质的组合物。

    2.
    发明专利
    未知

    公开(公告)号：DE102004037150A1

    公开(公告)日：2006-03-02

    申请号：DE102004037150

    申请日：2004-07-30

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： WALTER ANDREAS ,  WEITZ THOMAS ,  ENGL REIMUND ,  SEZI RECAI ,  MALTENBERGER ANNA ,  SCHUMANN JOERG

    IPC: C07C255/10 ,  C07C255/34 ,  C07C255/35 ,  C07C325/02 ,  G11C13/00 ,  H01L51/05

    Abstract: An integrated circuit having resistive memory is disclosed. In one embodiment, the memory includes novel memory cells which have two electrodes and a layer arranged in between and including an active material which contains [1,2]dithiolo[4,3-[c]-1,2-dithiol-3,6-dithione, (2,4,7-trinitro-9-fluorenylidene)malonodinitrile and a polymer are disclosed. In one embodiment, a process for the production of the cells according to the invention is provided, as well as the novel use of a composition which can be used as active material for the memory cells.

    6.
    发明专利
    未知

    公开(公告)号：DE102004037150B4

    公开(公告)日：2006-08-24

    申请号：DE102004037150

    申请日：2004-07-30

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： WALTER ANDREAS ,  WEITZ THOMAS ,  ENGL REIMUND ,  SEZI RECAI ,  MALTENBERGER ANNA ,  SCHUMANN JOERG

    IPC: H01L51/05 ,  C07C255/10 ,  C07C255/34 ,  C07C255/35 ,  C07C325/02 ,  G11C13/00

    Abstract: An integrated circuit having resistive memory is disclosed. In one embodiment, the memory includes novel memory cells which have two electrodes and a layer arranged in between and including an active material which contains [1,2]dithiolo[4,3-[c]-1,2-dithiol-3,6-dithione, (2,4,7-trinitro-9-fluorenylidene)malonodinitrile and a polymer are disclosed. In one embodiment, a process for the production of the cells according to the invention is provided, as well as the novel use of a composition which can be used as active material for the memory cells.

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