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    INTEGRATED CIRCUIT, AND METHOD FOR THE PRODUCTION OF AN INTEGRATED CIRCUIT
    4.
    发明申请
    INTEGRATED CIRCUIT, AND METHOD FOR THE PRODUCTION OF AN INTEGRATED CIRCUIT 审中-公开
    集成的电路和方法制造集成电路

    公开(公告)号：WO2005023876A3

    公开(公告)日：2005-08-18

    申请号：PCT/DE2004001904

    申请日：2004-08-24

    Applicant: INFINEON TECHNOLOGIES AG ,  HALIK MARCUS ,  WALTER ANDREAS ,  KLAUK HAGEN ,  SCHMID GUENTER ,  ZSCHIESCHANG UTE

    Inventor： HALIK MARCUS ,  WALTER ANDREAS ,  KLAUK HAGEN ,  SCHMID GUENTER ,  ZSCHIESCHANG UTE

    IPC: C08K5/053 ,  C08K5/42 ,  C08L61/14 ,  H01B3/44 ,  H01L51/30

    CPC classification number: C08K5/053 ,  C08K5/42 ,  C08L61/14

    Abstract: The invention relates to an integrated circuit comprising an organic semiconductor, particularly an organic field effect transistor (OEFT) that is provided with a dielectric layer. Said integrated circuit is produced by means of a polymer formulation consisting of a) 100 parts of at least one crosslinkable basic polymer, b) 10 to 20 parts of at least one electrophilic crosslinking component, c) 1 to 10 parts of at least one thermal acid catalyst that generates an activating proton at temperatures ranging from 100 to 150 DEG C, dissolved in d) at least one solvent. The invention further relates to a method for producing an integrated circuit, which makes it possible to produce integrated circuits comprising dielectric layers, especially for OFETs, at low temperatures.

    Abstract translation: 本发明涉及一种包含有机半导体，特别是有机场效应晶体管（OFT），其具有通过由以下组成的一个聚合物配方制造的介电层）100份的至少一种可交联的基础聚合物的集成电路，B）10至20份的至少一种亲电子交联组分， C）在100的温度下1〜10份的至少一种热致酸催化剂的 - 150℃溶解，生成d中活化质子）至少一种溶剂。 本发明还涉及一种用于制造集成电路。 这允许与电介质层，特别是在低温下的OFET可能集成电路的制造。

    RESISTIVE MEMORY
    5.
    发明申请
    RESISTIVE MEMORY 审中-公开
    电阻式工作记忆

    公开(公告)号：WO2006013160A3

    公开(公告)日：2006-10-05

    申请号：PCT/EP2005053546

    申请日：2005-07-21

    Applicant: INFINEON TECHNOLOGIES AG ,  WALTER ANDREAS ,  SEZI RECAI ,  ENGL REIMUND ,  MALTENBERGER ANNA ,  SCHUMANN JOERG ,  WEITZ THOMAS

    Inventor： WALTER ANDREAS ,  SEZI RECAI ,  ENGL REIMUND ,  MALTENBERGER ANNA ,  SCHUMANN JOERG ,  WEITZ THOMAS

    IPC: H01L51/30 ,  H01L27/28

    CPC classification number: H01L51/0052 ,  B82Y10/00 ,  G11C13/0014 ,  H01B1/121 ,  H01L27/11502 ,  H01L27/285 ,  H01L51/0036 ,  H01L51/0051

    Abstract: The invention relates to novel memory cells, comprising two electrodes and a layer arranged between the same, made from an active material, comprising (a) a compound of the structure given in general formula (I), where R 1 to R 2 independently = -H, -(CH 2 ) m CH 3 , -phenyl, -O-(CH 2 ) m CH 3 , -O-phenyl, -S(CH 2 ) m CH 3 , -S-aryl, -NR 3 R 4 , -SR or a halide, where R 1 and R 2 can together form a ring and where R 3 and R 4 independently = -H, preferably 1-10 C alkyl, -aryl, -heteroaryl, m = 0 or a whole number from 1-10 and n = a whole number from 2 to 1000 and (b) a compound of general formula (II): where R 5 to R 12 independently = -H, -(CH 2 ) m CH 3 , -phenyl, -0-(CH 2 ) m CH 3 , -O-phenyl, -CO(CH 2 ) m CH 3 , -halogen, -CN and/or -NO 2 , where R 5 and R 6 , or R 6 and R 7 , R 7 and R 8 , R 9 and R 10 , R 10 and R 11 and/or R 11 and R 12 can together form a ring, m having the meaning already given. The invention further relates to a method for production of said cells and the novel application of a composition which may be used as active material for the memory cells.

    Abstract translation: 有提供具有两个电极新存储单元和活性物质的包含（a）通式（I）的化合物所示结构的插层：（I）其中R 1 至R 2 彼此独立地可以具有下列含义：-H， - （CH 2 ）米 CH 3 ， - 苯基，-O-（CH 2 ）米 CH 3 ，-O-苯基，-S（CH 2 ）米 CH 3 ，-S-芳基，-NR 3 - [R 4 ，-SR或 卤素原子，其中R 1 和R 2 可一起形成环，和其中R 3 和R 4 独立地 -H，烷基，优选表示具有1-10个碳原子，芳基，杂芳基，m为0或在1-10范围内的整数，n = a是整数2至1000 ; 和（b）通式（II）化合物：其中R 5 至R 12 彼此独立地可以具有下列含义：-H， - （CH 2 ）米 CH 3 ，苯基，-O-（CH 2 ）米 CH < SUB> 3 ，-O-苯基， - CO（CH 2 ）米 CH 3 ， - 卤素，-CN，和 /或-NO 2 其中R 5 和R 6 或R 6 和R 7 < / SUB>，R 7 和R 8 ，R 9 和R 10 ，R 10 < / SUB>和R 11 和/或R 11 和R 12 可以一起形成一个环，其中m具有上面给出的含义，其包括 ， 此外，提供了用于制备本发明的细胞的方法和新的使用，其可被用作用于存储单元中的活性物质的组合物。

    INTEGRATED CIRCUIT COMPRISING AN ORGANIC SEMICONDUCTOR, AND METHOD FOR THE PRODUCTION OF AN INTEGRATED CIRCUIT
    6.
    发明申请
    INTEGRATED CIRCUIT COMPRISING AN ORGANIC SEMICONDUCTOR, AND METHOD FOR THE PRODUCTION OF AN INTEGRATED CIRCUIT 审中-公开
    具有有机半导体的集成电路和用于制造集成电路的方法

    公开(公告)号：WO2005023940A2

    公开(公告)日：2005-03-17

    申请号：PCT/DE2004001903

    申请日：2004-08-24

    Applicant: INFINEON TECHNOLOGIES AG ,  HALIK MARCUS ,  KLAUK HAGEN ,  SCHMID GUENTER ,  WALTER ANDREAS ,  ZSCHIESCHANG UTE

    Inventor： HALIK MARCUS ,  KLAUK HAGEN ,  SCHMID GUENTER ,  WALTER ANDREAS ,  ZSCHIESCHANG UTE

    IPC: G03F1/90 ,  H01B3/18 ,  H01B3/44 ,  H01L51/05 ,  C09D

    CPC classification number: H01B3/442 ,  H01L51/052

    Abstract: The invention relates to an integrated circuit comprising an organic semiconductor, especially an organic field effect transistor (OEFT) that is provided with a dielectric layer. Said integrated circuit is produced by means of a polymer formulation consisting of a) 100 parts of at least one crosslinkable basic polymer, b) 10 to 20 parts of at least one dibenzyl or tribenzyl alcohol compound as an electrophilic crosslinking component, c) 0.2 to 10 parts of at least one photo acid generator dissolved in d) at least one solvent. The invention further relates to a method for producing an integrated circuit, which makes it possible to produce integrated circuits comprising dielectric layers, particularly for OFETs, at low temperatures.

    Abstract translation: 本发明涉及一种包含有机半导体，特别是有机场效应晶体管（OFT），其具有通过由以下组成的一个聚合物配方制造的介电层）100份，或至少一种可交联基体聚合物，一种集成电路B）10至20份的至少一种二 - 。三苄基如亲电交联剂，c）0.2〜10份溶解于d。至少一种光酸产生剂）的至少一种溶剂。 本发明还涉及一种用于制造集成电路的方法。 这使得可以制造具有电介质层的集成电路，特别是用于低温下的OFET。

    NANOPARTICLES USED AS A CHARGE CARRIER SINK IN RESISTIVE STORAGE ELEMENTS
    7.
    发明申请
    NANOPARTICLES USED AS A CHARGE CARRIER SINK IN RESISTIVE STORAGE ELEMENTS 审中-公开
    纳米粒子作为承载器水槽电阻式存储器元件

    公开(公告)号：WO2004032147B1

    公开(公告)日：2004-07-22

    申请号：PCT/DE0302993

    申请日：2003-09-09

    Applicant: INFINEON TECHNOLOGIES AG ,  SCHMID GUENTER ,  KLAUK HAGEN ,  HALIK MARCUS ,  WALTER ANDREAS

    Inventor： SCHMID GUENTER ,  KLAUK HAGEN ,  HALIK MARCUS ,  WALTER ANDREAS

    IPC: G11C13/02 ,  H01L45/00

    CPC classification number: G11C13/0016 ,  B82Y10/00 ,  G11C13/0014 ,  H01L27/2409 ,  H01L45/10 ,  H01L45/1233 ,  H01L45/14 ,  H01L45/1608

    Abstract: The invention relates to a resistive storage element containing a dielectric as the storage medium, in which isolated nanoparticles are arranged. The dielectric is preferably configured from an organic polymer. The storage element exhibits a resistive hysteresis effect. Below a voltage Vhold, the storage element is switched to a slightly conductive state, whereas above a voltage Vkrit, the storage element changes over into a conductive state. The conductive state of the storage element can be read out by applying a voltage that lies between Vhold and Vkrit.<>

    Abstract translation: 纳米颗粒作为载体下沉电阻SpeicherelementenDie发明涉及一种电阻式存储器元件。 所述存储器元件包括电介质为其中分离纳米颗粒被设置的存储介质。 电介质优选由有机聚合物形成。 存储元件是电阻滞后。 以下的电压VHOLD，而它通过上述导通状态的电压Vkrit存储元件被切换到低导通状态。 通过施加电压，其位于VHOLD和Vkrit之间，存储元件的导通状态可以被读出。

    9.
    发明专利
    未知

    公开(公告)号：DE102004037150B4

    公开(公告)日：2006-08-24

    申请号：DE102004037150

    申请日：2004-07-30

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： WALTER ANDREAS ,  WEITZ THOMAS ,  ENGL REIMUND ,  SEZI RECAI ,  MALTENBERGER ANNA ,  SCHUMANN JOERG

    IPC: H01L51/05 ,  C07C255/10 ,  C07C255/34 ,  C07C255/35 ,  C07C325/02 ,  G11C13/00

    Abstract: An integrated circuit having resistive memory is disclosed. In one embodiment, the memory includes novel memory cells which have two electrodes and a layer arranged in between and including an active material which contains [1,2]dithiolo[4,3-[c]-1,2-dithiol-3,6-dithione, (2,4,7-trinitro-9-fluorenylidene)malonodinitrile and a polymer are disclosed. In one embodiment, a process for the production of the cells according to the invention is provided, as well as the novel use of a composition which can be used as active material for the memory cells.

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