公开(公告)号：JP2004068005A

公开(公告)日：2004-03-04

申请号：JP2003183611

申请日：2003-06-26

Applicant: Infineon Technologies Ag ,  インフィネオン テクノロジーズ アクチェンゲゼルシャフト

Inventor： SEZI RECAI ,  WALTHER ANDREAS ,  MALTENBERGER ANNA ,  LOWACK KLAUS

IPC: C08G73/02 ,  C08G69/26 ,  C08G69/32 ,  C08G73/22 ,  H01B3/30 ,  H01B3/44 ,  H01L21/312 ,  H01L21/768 ,  H01L23/522

CPC classification number: C08G73/22 ,  C08G69/26 ,  C08G69/265 ,  C08G69/32 ,  H01B3/441 ,  H01L21/02118 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/76801

Abstract: PROBLEM TO BE SOLVED: To provide a poly(o-hydroxyamide), a preparing process thereof, a polybenzooxazole, a preparing process thereof, a dielectric component containing a polybenzooxazole as a dielectric material and a process for forming this dielectric component, in particularly, to obtain such a polymer having the safety at high temperatures and for use in a microchip as makes it possible to form a minute conductor truck in the microchip. SOLUTION: The novel poly(o-hydroxyamide) is expressed by formula (I). The poly(o-hydroxyamide) can be cyclized to give a polybenzooxazole having a good barrier effect on the diffusion of a metal. The poly(o-hydroxyamide) is coated on a semiconductor substrate, then heated to thereby convert possibly into the polybenzooxazole. A diffusion barrier can be distributed substantially between a semiconductor truck and a dielectric material as the result of the good barrier effect on the diffusion of the metal. COPYRIGHT: (C)2004,JPO

公开(公告)号：JP2007084580A

公开(公告)日：2007-04-05

申请号：JP2006356839

申请日：2006-12-29

Applicant: Infineon Technologies Ag ,  インフィネオン テクノロジーズ アクチエンゲゼルシャフト

Inventor： WALTHER ANDREAS ,  GNUECHTEL INGO ,  MALTENBERGER ANNA ,  SEZI RECAI ,  HARTMANN HORST

IPC: C07C215/80 ,  C07C215/82 ,  C07B61/00 ,  C07C201/00 ,  C07C207/04 ,  C07C213/02 ,  C07C217/90

CPC classification number: C07C217/90 ,  C07C215/80 ,  C07C2603/24

Abstract: PROBLEM TO BE SOLVED: To enable the use of a new starting material that has a small dielectric constant, good high-temperature stability and good chemical stability and enables the preparation of an insulating polymer. SOLUTION: A new bis-o-aminophenol of formula I (wherein M represents a particular group) is provided. The bis-o-aminophenol enables the preparation of a heat-resistant polybenzoxazole. The bis-o-aminophenol is preferably prepared from a corresponding diol, which is first nitrosated. A nitroso compound is then reduced to an amino compound through the hydrogenation using Pd/C and H 2 . COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：为了能够使用具有小的介电常数，良好的高温稳定性和良好的化学稳定性的新的起始材料，并且能够制备绝缘聚合物。 解决方案：提供了新的式I的双邻氨基苯酚（其中M表示特定的基团）。 双邻氨基苯酚能够制备耐热聚苯并恶唑。 双邻氨基苯酚优选由相应的二醇制备，其首先被亚硝化。 然后通过使用Pd / C和H SB 2的氢化将亚硝基化合物还原成氨基化合物。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2004099873A

公开(公告)日：2004-04-02

申请号：JP2003184081

申请日：2003-06-27

Applicant: Infineon Technologies Ag ,  インフィネオン テクノロジーズ アクチエンゲゼルシャフト

Inventor： SEZI RECAI ,  WALTER ANDREAS ,  MALTENBERGER ANNA ,  LOWACK KLAUS ,  HALIK MARCUS

IPC: C08G73/02 ,  C08G69/26 ,  C08G69/32 ,  C08G73/22 ,  H01B3/30

CPC classification number: C08G69/265 ,  C08G69/26 ,  C08G69/32 ,  C08G73/22 ,  Y10T428/31504 ,  Y10T428/31678 ,  Y10T428/31681 ,  Y10T428/31721

Abstract: PROBLEM TO BE SOLVED: To provide a novel polymer easily spreadable on an electronic part with a very favorable electron insulating effect after cyclization, sufficient stability to chemicals and elevated temperatures, good adhesiveness and filling properties. SOLUTION: The present invention relates to an dielectric material for aluminum and copper metallizing being stable at elevated temperature. Polybenzoxazole is prepared by reacting bis-o-aminophenol with a dicarboxylic acid or its activated derivative (acid chloride) to give poly-o-hydroxamide followed by heating for dehydration and cyclization. The dielectric material of this polymer composition is very suitable for filling a narrow trench, surprisingly even though it is dehydrated during cyclization, and the filled trench shows no defect, bubble or crack. The polybenzoxazole has a low dielectric constant (≤2.7) and suitable for an electric insulator and further exhibits favorable adhesiveness to all the surfaces participating in microelectron optics. COPYRIGHT: (C)2004,JPO

公开(公告)号：JP2004026831A

公开(公告)日：2004-01-29

申请号：JP2003180250

申请日：2003-06-24

Applicant: Infineon Technologies Ag ,  インフィネオン テクノロジーズ アクチェンゲゼルシャフト

Inventor： WALTHER ANDREAS ,  GNUECHTEL INGO ,  MALTENBERGER ANNA ,  SEZI RECAI ,  HARTMANN HORST

IPC: C07C215/82 ,  C07B61/00 ,  C07C213/02 ,  C07C215/80 ,  C07C217/90

CPC classification number: C07C217/90 ,  C07C215/80 ,  C07C2603/24

Abstract: PROBLEM TO BE SOLVED: To obtain a new starting material for forming an insulating polymer which has a small dielectric constant, high-temperature stability, and chemical stability.
SOLUTION: A new bis-o-aminophenol is expressed by formula I (M is a bivalent residue having a specified structure). Heat-resistant polybenzoxazole is formed out of the bis-o-aminophenol. The bis-o-aminophenol is preferably produced by nitrosating a diol which corresponds to the aminophenol to form a nitroso compound, and hydrogenating the nitroso compound with H
2 in the presence of Pd/C, so as to obtain the amino compound by reduction.
COPYRIGHT: (C)2004,JPO

公开(公告)号：WO2006013160A3

公开(公告)日：2006-10-05

申请号：PCT/EP2005053546

申请日：2005-07-21

Applicant: INFINEON TECHNOLOGIES AG ,  WALTER ANDREAS ,  SEZI RECAI ,  ENGL REIMUND ,  MALTENBERGER ANNA ,  SCHUMANN JOERG ,  WEITZ THOMAS

Inventor： WALTER ANDREAS ,  SEZI RECAI ,  ENGL REIMUND ,  MALTENBERGER ANNA ,  SCHUMANN JOERG ,  WEITZ THOMAS

IPC: H01L51/30 ,  H01L27/28

CPC classification number: H01L51/0052 ,  B82Y10/00 ,  G11C13/0014 ,  H01B1/121 ,  H01L27/11502 ,  H01L27/285 ,  H01L51/0036 ,  H01L51/0051

Abstract: The invention relates to novel memory cells, comprising two electrodes and a layer arranged between the same, made from an active material, comprising (a) a compound of the structure given in general formula (I), where R 1 to R 2 independently = -H, -(CH 2 ) m CH 3 , -phenyl, -O-(CH 2 ) m CH 3 , -O-phenyl, -S(CH 2 ) m CH 3 , -S-aryl, -NR 3 R 4 , -SR or a halide, where R 1 and R 2 can together form a ring and where R 3 and R 4 independently = -H, preferably 1-10 C alkyl, -aryl, -heteroaryl, m = 0 or a whole number from 1-10 and n = a whole number from 2 to 1000 and (b) a compound of general formula (II): where R 5 to R 12 independently = -H, -(CH 2 ) m CH 3 , -phenyl, -0-(CH 2 ) m CH 3 , -O-phenyl, -CO(CH 2 ) m CH 3 , -halogen, -CN and/or -NO 2 , where R 5 and R 6 , or R 6 and R 7 , R 7 and R 8 , R 9 and R 10 , R 10 and R 11 and/or R 11 and R 12 can together form a ring, m having the meaning already given. The invention further relates to a method for production of said cells and the novel application of a composition which may be used as active material for the memory cells.

Abstract translation: 有提供具有两个电极新存储单元和活性物质的包含（a）通式（I）的化合物所示结构的插层：（I）其中R _{1 至R 2 彼此独立地可以具有下列含义：-H， - （CH 2 ）米 CH 3 ， - 苯基，-O-（CH 2 ）米 CH 3 ，-O-苯基，-S（CH 2 ）米 CH 3 ，-S-芳基，-NR 3 - [R 4 ，-SR或 卤素原子，其中R 1 和R 2 可一起形成环，和其中R 3 和R 4 独立地 -H，烷基，优选表示具有1-10个碳原子，芳基，杂芳基，m为0或在1-10范围内的整数，n = a是整数2至1000 ; 和（b）通式（II）化合物：其中R 5 至R 12 彼此独立地可以具有下列含义：-H， - （CH 2 ）米 CH 3 ，苯基，-O-（CH 2 ）米 CH < SUB> 3 ，-O-苯基， - CO（CH 2 ）米 CH 3 ， - 卤素，-CN，和 /或-NO 2 其中R 5 和R 6 或R 6 和R 7 < / SUB>，R 7 和R 8 ，R 9 和R 10 ，R 10 < / SUB>和R 11 和/或R 11 和R 12 可以一起形成一个环，其中m具有上面给出的含义，其包括 ， 此外，提供了用于制备本发明的细胞的方法和新的使用，其可被用作用于存储单元中的活性物质的组合物。}

公开(公告)号：WO2005034172A3

公开(公告)日：2005-08-18

申请号：PCT/EP2004010924

申请日：2004-09-30

Applicant: INFINEON TECHNOLOGIES AG ,  SEZI RECAI ,  WALTER ANDREAS ,  ENGL REIMUND ,  MALTENBERGER ANNA ,  SCHUMANN JOERG

Inventor： SEZI RECAI ,  WALTER ANDREAS ,  ENGL REIMUND ,  MALTENBERGER ANNA ,  SCHUMANN JOERG

IPC: C07C50/04 ,  C07C50/12 ,  C07C255/56 ,  C07D409/04 ,  C09D5/25 ,  H01L27/28 ,  H01L51/05 ,  H01L51/30 ,  H01L51/20

CPC classification number: H01L51/0595 ,  B82Y10/00 ,  H01L51/0051

Abstract: The invention relates to compositions for memory applications, a memory cell comprising said composition along with two electrodes, a method for producing microelectronic components, and the use of the inventive composition during the production of said microelectronic components.

Abstract translation: 本发明涉及用于存储应用的组合物，涉及包含上述组合物和两个电极的存储单元，并且还涉及一种用于制造微电子元件以及根据本发明在微电子元件的制造中使用所述组合物。

公开(公告)号：DE102004004863B4

公开(公告)日：2007-01-25

申请号：DE102004004863

申请日：2004-01-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WALTER ANDREAS ,  SEZI RECAI ,  ENGL REIMUND ,  MALTENBERGER ANNA ,  SCHUMANN JOERG ,  WEITZ THOMAS

IPC: G11C11/21 ,  C07C211/50 ,  C07C255/45 ,  C07D345/00 ,  G11C13/00 ,  G11C13/02 ,  H01L27/24 ,  H01L27/28 ,  H01L29/08 ,  H01L35/24 ,  H01L51/30

公开(公告)号：DE102004037150B4

公开(公告)日：2006-08-24

申请号：DE102004037150

申请日：2004-07-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WALTER ANDREAS ,  WEITZ THOMAS ,  ENGL REIMUND ,  SEZI RECAI ,  MALTENBERGER ANNA ,  SCHUMANN JOERG

IPC: H01L51/05 ,  C07C255/10 ,  C07C255/34 ,  C07C255/35 ,  C07C325/02 ,  G11C13/00

Abstract: An integrated circuit having resistive memory is disclosed. In one embodiment, the memory includes novel memory cells which have two electrodes and a layer arranged in between and including an active material which contains [1,2]dithiolo[4,3-[c]-1,2-dithiol-3,6-dithione, (2,4,7-trinitro-9-fluorenylidene)malonodinitrile and a polymer are disclosed. In one embodiment, a process for the production of the cells according to the invention is provided, as well as the novel use of a composition which can be used as active material for the memory cells.

公开(公告)号：DE102004004863A1

公开(公告)日：2005-09-01

申请号：DE102004004863

申请日：2004-01-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WALTER ANDREAS ,  SEZI RECAI ,  ENGL REIMUND ,  MALTENBERGER ANNA ,  SCHUMANN JOERG ,  WEITZ THOMAS

IPC: C07C211/50 ,  C07D345/00 ,  G11C11/21 ,  G11C13/00 ,  G11C13/02 ,  H01L27/24 ,  H01L27/28 ,  H01L29/08 ,  H01L35/24 ,  H01L51/30

公开(公告)号：DE10218788A1

公开(公告)日：2003-11-20

申请号：DE10218788

申请日：2002-04-26

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SEZI RECAI ,  WALTER ANDREAS ,  LOWACK KLAUS ,  MALTENBERGER ANNA ,  BANFIC ROBERT

IPC: C08G69/26 ,  C08G69/44 ,  C08G73/22 ,  C09D5/25 ,  H01L21/312 ,  H01L21/316 ,  H01L23/532 ,  H05K1/03 ,  B32B15/08

Abstract: Specified dinaphthylene diamines are new. Dinaphthylene diamines of formulae (IVa) and (IVb) are new. Independent claims are also included for (1) poly-o-hydroxyamides of formula (I); (2) polybenzoxazoles of formula (III); (3) preparation of the poly-o-hydroxyamides; and (4) preparation of the polybenzoxazoles. E1 and E2 = H, OH or optionally unsaturated hydrocarbyl optionally containing heteroatoms; Y1 and Y2 = hydrocarbylene optionally containing heteroatoms; Z1 = a dinaphthylene group of formula (IIa) or (IIb); Z2 = four-valent hydrocarbon of linked alkyl and/or aryl groups and optionally containing heteroatoms; R1 - R4 = -C6H5, -(CH2)n-CH3, -G-(CH2)n-CH3, -CH((CH2)nCH3)2, -CH(CH3)2, -G-CH(CH3)2, -C(CH3)3, -G-C(CH3)3, -(CF2)n-CF3, -G-(CF2)n-CF3, -CF((CF2)nCF3)2, -CF(CF3)2, -C(CF3)3, -N(CH3)2 or -N(CF3)2; R5 = H, -CO(CH2)n-CH3, -COO-(CH2)n-CH3, -(CH2)n-CH3, -CH((CH2)nCH3)2, -CH(CH3)2, -O(CH3)3, -(CF2)n-CF3, -OF((CF2)nCF3)2, -CF(CF3)2, -C(CF3)3, -(CH2)n-C6H5 or -COO-(CH2)n-C6H5; G = O or S; a = 0 or 1; b = 1-200; c = 0-200; d = 0 or 1; and n = 1-5. GR5 and asterisk are ortho to each other.