Method for operating pmc memory cell and cbram memory circuit
    1.
    发明专利
    Method for operating pmc memory cell and cbram memory circuit 有权
    用于操作PMC存储器单元和CBRAM存储器电路的方法

    公开(公告)号:JP2006331626A

    公开(公告)日:2006-12-07

    申请号:JP2006141300

    申请日:2006-05-22

    Abstract: PROBLEM TO BE SOLVED: To stabilize operation of a PMC memory cell using a CBRAM memory array. SOLUTION: The PMC memory cell includes a solid electrolyte which is adapted to selectively develop and eliminate a conductive path depending on an applied electric field. The PMC memory cell is programmed to change to a programmed state by applying programming voltage, and is erased to change to an erased state by applying erase voltage. Refresh voltage is applied to the PMC memory cell predetermined times to stabilize the programmed state of the PMC memory cell. While applying the refresh voltage, programming of the PMC memory cell in the erased state to the programmed state is prevented, and that, by applying the refresh voltage, stabilizing the programmed state of the PMC memory cell is performed. COPYRIGHT: (C)2007,JPO&INPIT

    Abstract translation: 要解决的问题:使用CBRAM存储器阵列稳定PMC存储单元的操作。 解决方案:PMC存储单元包括固体电解质,其适于根据所施加的电场选择性地显影和消除导电路径。 通过应用编程电压将PMC存储单元编程为变为编程状态,并通过施加擦除电压将其擦除为更改为擦除状态。 将刷新电压预先施加到PMC存储器单元以稳定PMC存储单元的编程状态。 在施加刷新电压的同时,防止将处于擦除状态的PMC存储单元编程到编程状态,并且通过施加刷新电压来执行PMC存储单元的编程状态的稳定。 版权所有(C)2007,JPO&INPIT

    METHOD AND DEVICE FOR DRIVING SOLID ELECTROLYTE CELL

    公开(公告)号:JP2006222420A

    公开(公告)日:2006-08-24

    申请号:JP2006020767

    申请日:2006-01-30

    Abstract: PROBLEM TO BE SOLVED: To provide an electric switching device in which electric switching-on is performed by a track (101) established in a switching device (100). SOLUTION: The switching device (100) comprises a first electrode unit (201), a second electrode unit (202), and an electrolyte layer (203) which is arranged between the first and second electrode units (201, 202) to be connected with these electrode units in contact. The track (101) is formed between the first and second electrode units (201, 202) through the electrolyte layer (203) by a conductive element (102) spreading inside the electrolyte layer (203) from the first electrode unit (201). A heating device (400) heats the switching device (100) during switching operation. COPYRIGHT: (C)2006,JPO&NCIPI

    4.
    发明专利
    未知

    公开(公告)号:DE102004041894B3

    公开(公告)日:2006-03-09

    申请号:DE102004041894

    申请日:2004-08-30

    Abstract: A conductive bridge RAM (CBRAM) comprises memory cells on a base of active solid electrolyte (13) of alterable resistance embedded between two electrodes (BE,TE) applying given electric fields to switch between high resistance OFF and low resistance ON states. Resistive material (10) is embedded between the electrodes parallel to the electrolyte. An independent claim is also included for a production process for the above.

    10.
    发明专利
    未知

    公开(公告)号:DE102004041626A1

    公开(公告)日:2006-03-09

    申请号:DE102004041626

    申请日:2004-08-27

    Abstract: The invention relates to a chip card security device, a procedure to be used in securing a chip card, as well as a chip card ( 1 ), comprising: at least one memory component ( 11 ), which comprises an active material layer ( 13 ), in particular an active material layer ( 13 ) comprising a solid state electrolyte, which layer may be brought into more or less of a conductive state and/or a state exhibiting a higher or lower level of capacitance by means of appropriate switching procedures.

Patent Agency Ranking