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    1.
    发明专利
    未知

    公开(公告)号：DE50303548D1

    公开(公告)日：2006-07-06

    申请号：DE50303548

    申请日：2003-06-17

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： STAECKER JENS ,  HOMMEN HEIKO

    IPC: G03F7/20 ,  G03F9/00

    Abstract: The semiconductor wafer (1) contains one or more adjusting markings (22) in first layer (14) on wafer, on which is deposited a second layer (12). A used microscope measuring appts. comprises specified components, such as light sources, one with visual wavelengths range for visualising the marking and one for UV wavelength range for exposing first resist film (10). The method includes several steps, such as deposition of resist film on second layer (12), switching the light soruces for exposition of resist film in region (30) above the marking, etching the second layer and deposition of a second resist film, and exposition of second resist film by projection of a mask.

    2.
    发明专利
    未知

    公开(公告)号：DE10344645A1

    公开(公告)日：2005-05-25

    申请号：DE10344645

    申请日：2003-09-25

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： STROBL MARLENE ,  SCHUMACHER KARL ,  STAECKER JENS ,  BRUCH JENS UWE ,  HOMMEN HEIKO

    IPC: G03B27/42 ,  G03F1/00 ,  G03F7/20

    Abstract: The mutually associated structure patterns, which are provided on one mask, or a plurality of masks for a double or multiple exposure can be received by the mask substrate holder. The mask substrate holder has two receiving stations one for each of the masks. Alternatively, both structure patterns for the double exposure are formed on one mask. The substrate holder has one receiving station. The substrate holder, is displaced from the section including first structure pattern to the second, between the two exposure operations, without the masks having to be loaded or unloaded, and realigned.

    6.
    发明专利
    未知

    公开(公告)号：DE10311855B4

    公开(公告)日：2005-04-28

    申请号：DE10311855

    申请日：2003-03-17

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： STAECKER JENS ,  BRUCH JENS ,  HOMMEN HEIKO

    IPC: B81C1/00 ,  G03F7/00 ,  G03F9/00 ,  H01L21/027 ,  H01L21/31 ,  B29C59/02

    Abstract: Transfer mechanism of information or structures onto wafer (1) uses stamp (2) to whose surface information or structures have been applied, e.g. by a photolithographic process in conjunction with etching as raised structures (3) while wafer, secured in chuck is provided with plastic deformable, auxiliary layer (11).Size of stamp roughly corresponds to wafer size and stamp and wafer are each fitted with mutually allocated pairs of adjusting marks (5-8). Stamp can be positioned on wafer by IR system and pressed into auxiliary structuring layer.

    Lithographic projection photo-mask, useful e.g. in structuring semiconductor wafers to form integrated circuits, includes absorber in purging gas volume above substrate to inhibit crystal formation
    8.
    发明专利
    Lithographic projection photo-mask, useful e.g. in structuring semiconductor wafers to form integrated circuits, includes absorber in purging gas volume above substrate to inhibit crystal formation 未知

    公开(公告)号：DE102005052046A1

    公开(公告)日：2007-05-03

    申请号：DE102005052046

    申请日：2005-10-31

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： NEES DIETER ,  BAUCH LOTHAR ,  GEYER STEFAN ,  BRUCH JENS UWE ,  KLINGBEIL PATRICK ,  SCHUMACHER KARL ,  STAECKER JENS ,  SCHIWON ROBERTO ,  HOMMEN HEIKO ,  BONNESS ANJA

    IPC: G03F1/64

    Abstract: A lithographic projection photo-mask (5) comprises: (a) a transparent substrate (10) with a pattern (14) of structural elements (16); (b) a frame (18), on the substrate outside the pattern; (c) a protective film (20) above the substrate, forming an enclosed volume filled with purging gas; and (d) an arrangement (32) of absorber within the enclosed volume, to remove harmful materials from the gas and inhibit crystal formation on the mask. A photo-mask (5) for lithographic projection comprises: (a) a transparent substrate (10), provided on its front with a pattern (14) of absorbing, partially absorbing or phase-shifting structural elements (16); (b) a frame (18), located on the front side of the substrate outside the pattern; (c) a protective film (20), located above the substrate on the frame, forming an enclosed volume filled with purging gas; and (d) an absorber arrangement (32), including absorber located in the frame region within the enclosed volume, for removing harmful materials from the purging gas to inhibit crystal formation on the mask. An independent claim is included for a method for using the mask in an exposure plant, involving: (A) supplying the mask into an exposure device from a protective container; (B) carrying out one or more exposure processes in the exposure device using light from an ultraviolet source; and (C) withdrawing the mask from the exposure device into the protective container.

    9.
    发明专利
    未知

    公开(公告)号：DE10315086B4

    公开(公告)日：2006-08-24

    申请号：DE10315086

    申请日：2003-04-02

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： STAECKER JENS

    IPC: G05D3/00 ,  G01B11/00 ,  G03F7/20 ,  G03F9/00 ,  H01L21/66

    Abstract: The method involves determining position information for an adjustment mark in a given direction using an optical measuring technique optimized for position determination. A line profile of the adjustment mark is determined in the given direction using an optical measuring technique optimized for profile determination, and used to correct the position information. Second position information for the adjustment mark in the given direction is determined and used to position and/or model the semiconductor wafer. An independent claim is included for an apparatus for carrying out the method.

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