1.
    发明专利
    未知

    公开(公告)号:DE10344862A1

    公开(公告)日:2004-04-15

    申请号:DE10344862

    申请日:2003-09-26

    Abstract: A trench capacitor memory cell structure is provided with includes a vertical collar region that suppresses current leakage of an adjacent vertical parasitic transistor that exists between the vertical MOSFET and the underlying trench capacitor. The vertical collar isolation, which has a vertical length of about 0.50 mum or less, includes a first portion that is present partially outside the trench and a second portion that is present inside the trench. The first portion of the collar oxide is thicker than said second portion oxide thereby reducing parasitic current leakage.

    2.
    发明专利
    未知

    公开(公告)号:DE10344862B4

    公开(公告)日:2007-12-20

    申请号:DE10344862

    申请日:2003-09-26

    Abstract: A trench capacitor memory cell structure is provided with includes a vertical collar region that suppresses current leakage of an adjacent vertical parasitic transistor that exists between the vertical MOSFET and the underlying trench capacitor. The vertical collar isolation, which has a vertical length of about 0.50 mum or less, includes a first portion that is present partially outside the trench and a second portion that is present inside the trench. The first portion of the collar oxide is thicker than said second portion oxide thereby reducing parasitic current leakage.

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