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公开(公告)号:DE10344862A1
公开(公告)日:2004-04-15
申请号:DE10344862
申请日:2003-09-26
Applicant: INFINEON TECHNOLOGIES AG , IBM
Inventor: DIVAKARUNI RAMACHANDRA , FEHLAUER GERD T , KUDELKA STEPHAN , MANDELMAN JACK A , SCHROEDER UWE , TEWS HELMUT
IPC: H01L21/334 , H01L21/8242 , H01L27/108 , H01L29/94
Abstract: A trench capacitor memory cell structure is provided with includes a vertical collar region that suppresses current leakage of an adjacent vertical parasitic transistor that exists between the vertical MOSFET and the underlying trench capacitor. The vertical collar isolation, which has a vertical length of about 0.50 mum or less, includes a first portion that is present partially outside the trench and a second portion that is present inside the trench. The first portion of the collar oxide is thicker than said second portion oxide thereby reducing parasitic current leakage.
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公开(公告)号:DE10344862B4
公开(公告)日:2007-12-20
申请号:DE10344862
申请日:2003-09-26
Applicant: INFINEON TECHNOLOGIES AG , IBM
Inventor: DIVAKARUNI RAMACHANDRA , FEHLAUER GERD T , KUDELKA STEPHAN , MANDELMAN JACK A , SCHROEDER UWE , TEWS HELMUT
IPC: H01L27/108 , H01L21/334 , H01L21/8242 , H01L29/94
Abstract: A trench capacitor memory cell structure is provided with includes a vertical collar region that suppresses current leakage of an adjacent vertical parasitic transistor that exists between the vertical MOSFET and the underlying trench capacitor. The vertical collar isolation, which has a vertical length of about 0.50 mum or less, includes a first portion that is present partially outside the trench and a second portion that is present inside the trench. The first portion of the collar oxide is thicker than said second portion oxide thereby reducing parasitic current leakage.
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