中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

43 records (took 0.026 seconds)

    Method for manufacturing electronic element
    1.
    发明专利
    Method for manufacturing electronic element 审中-公开
    制造电子元件的方法

    公开(公告)号：JP2006295196A

    公开(公告)日：2006-10-26

    申请号：JP2006111855

    申请日：2006-04-14

    Applicant: Infineon Technologies Ag ,  インフィネオン テクノロジーズ アクチエンゲゼルシャフト

    Inventor： AVELLAN ALEJANDRO ,  HECHT THOMAS ,  JAKSCHIK STEFAN ,  SCHROEDER UWE

    IPC: H01L27/108 ,  H01L21/8242 ,  H01L29/78

    CPC classification number: H01L28/65 ,  H01L27/1087 ,  H01L29/66181

    Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing an electronic element such as a DRAM semiconductor memory with which proper capacitor characteristics or recording characteristics can be obtained even if the capacitor structure is very small, or a field effect transistor.
    SOLUTION: In a method for manufacturing an electronic element in which a dielectric (130) and at least one capacitor (150) having at least one connection electrode (120, 140) are formed, particularly, a DRAM semiconductor memory or a field effect transistor, in order to create a capacitor to obtain optimum capacitor characteristics even if the capacitor structure is very small, the dielectric (130) or the connection electrode (120, 140) is formed such that the occurrence of transient polarization is suppressed or at least reduced.
    COPYRIGHT: (C)2007,JPO&INPIT

    Abstract translation: 要解决的问题：提供一种用于制造诸如DRAM半导体存储器的电子元件的方法，即使电容器结构非常小也能够获得适当的电容器特性或记录特性，或场效应晶体管。 解决方案：在制造其中形成电介质（130）和至少一个具有至少一个连接电极（120,140）的电容器（150）的电子元件的方法中，特别地，DRAM半导体存储器或 场效应晶体管，为了形成电容器以获得最佳的电容器特性，即使电容器结构非常小，电介质（130）或连接电极（120,140）形成为使得瞬态极化的发生被抑制或 至少减少 版权所有（C）2007，JPO＆INPIT

    4.
    发明专利
    未知

    公开(公告)号：DE10344862A1

    公开(公告)日：2004-04-15

    申请号：DE10344862

    申请日：2003-09-26

    Applicant: INFINEON TECHNOLOGIES AG ,  IBM

    Inventor： DIVAKARUNI RAMACHANDRA ,  FEHLAUER GERD T ,  KUDELKA STEPHAN ,  MANDELMAN JACK A ,  SCHROEDER UWE ,  TEWS HELMUT

    IPC: H01L21/334 ,  H01L21/8242 ,  H01L27/108 ,  H01L29/94

    Abstract: A trench capacitor memory cell structure is provided with includes a vertical collar region that suppresses current leakage of an adjacent vertical parasitic transistor that exists between the vertical MOSFET and the underlying trench capacitor. The vertical collar isolation, which has a vertical length of about 0.50 mum or less, includes a first portion that is present partially outside the trench and a second portion that is present inside the trench. The first portion of the collar oxide is thicker than said second portion oxide thereby reducing parasitic current leakage.

    5.
    发明专利
    未知

    公开(公告)号：DE10246306A1

    公开(公告)日：2003-04-30

    申请号：DE10246306

    申请日：2002-10-04

    Applicant: INFINEON TECHNOLOGIES AG ,  IBM

    Inventor： CHUDZIK MICHAEL ,  GLUSCHENKOV OLEG ,  JAMMY RAJARAO ,  SCHROEDER UWE ,  TEWS HELMUT

    IPC: H01L21/316 ,  H01L21/321 ,  H01L21/8242 ,  H01G4/06

    Abstract: An improved capacitor is formed by a process where an improved node dielectric layer is formed with an improved dielectric constant by performing an Free Radical Enhanced Rapid Thermal Oxidation (FRE RTO) step during formation of the node dielectric layer. Use of an FRE RTO step instead of the conventional furnace oxidation step produces a cleaner oxide with a higher dielectric constant and higher capacitance. Other specific embodiments of the invention include improved node dielectric layer by one or more additional nitridation steps, done by either Remote Plasma Nitridation (RPN), Rapid Thermal Nitridation (RTN), Decoupled Plasma Nitridation (DPN) or other nitridation method; selective oxidation; use of a metal layer rather than a SiN layer as the dielectric base; and selective oxidation of the metal layer.

    6.
    发明专利
    未知

    公开(公告)号：DE10344862B4

    公开(公告)日：2007-12-20

    申请号：DE10344862

    申请日：2003-09-26

    Applicant: INFINEON TECHNOLOGIES AG ,  IBM

    Inventor： DIVAKARUNI RAMACHANDRA ,  FEHLAUER GERD T ,  KUDELKA STEPHAN ,  MANDELMAN JACK A ,  SCHROEDER UWE ,  TEWS HELMUT

    IPC: H01L27/108 ,  H01L21/334 ,  H01L21/8242 ,  H01L29/94

    Abstract: A trench capacitor memory cell structure is provided with includes a vertical collar region that suppresses current leakage of an adjacent vertical parasitic transistor that exists between the vertical MOSFET and the underlying trench capacitor. The vertical collar isolation, which has a vertical length of about 0.50 mum or less, includes a first portion that is present partially outside the trench and a second portion that is present inside the trench. The first portion of the collar oxide is thicker than said second portion oxide thereby reducing parasitic current leakage.

    8.
    发明专利
    未知

    公开(公告)号：DE102005018029A1

    公开(公告)日：2006-10-26

    申请号：DE102005018029

    申请日：2005-04-14

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： JAKSCHIK STEFAN ,  SCHROEDER UWE ,  HECHT THOMAS ,  AVELLAN ALEJANDRO

    IPC: H01L21/8242

    Abstract: An electrical component, such as a DRAM semiconductor memory or a field-effect transistor is fabricated. At least one capacitor having a dielectric (130) and at least one connection electrode (120, 140) are fabricated. To enable the capacitors fabricated to have optimum storage properties even for very small capacitor structures, the dielectric (130) or the connection electrode (120, 140) are formed in such a manner that transient polarization effects are prevented or at least reduced.

    10.
    发明专利
    未知

    公开(公告)号：DE10357756B4

    公开(公告)日：2006-03-09

    申请号：DE10357756

    申请日：2003-12-10

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： HECHT THOMAS ,  SCHROEDER UWE ,  JAKSCHIK STEFAN

    IPC: C23C16/00 ,  C23C16/30 ,  C23C16/455 ,  H01L21/314 ,  H01L21/8242

    Abstract: Production of metal oxynitride layers comprises depositing a chemically reactive metal compound on the surface of a substrate in the gas phase and reacting with nitrogen oxide and/or dinitrogen monoxide. The metal oxynitride is not silicon oxynitride (SiON). An independent claim is also included for a metal oxynitride layer produced by the above process.

Patent Agency Ranking