公开(公告)号：US20230326965A1

公开(公告)日：2023-10-12

申请号：US18087347

申请日：2022-12-22

Applicant: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES

Inventor： Yongliang Li ,  Anlan Chen ,  Fei Zhao ,  Xiaohong Cheng ,  Huaxiang Yin ,  Jun Luo ,  Wenwu Wang

IPC: H01L29/786 ,  H01L29/775 ,  H01L29/66 ,  H01L29/423 ,  H01L29/06

CPC classification number: H01L29/0673 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/66545 ,  H01L29/775 ,  H01L29/78696

Abstract: A semiconductor device and a method for manufacturing the same. The semiconductor device includes: a first gate-all-around (GAA) transistor disposed in the first region, including a first nanowire or nanosheet of at least one first layer, the at least one first layer and the substrate form a first group, among which all pairs of adjacent layers are separated by first distances, respectively; and a second GAA transistor disposed in the second region, including a second nanowire or nanosheet of at least two second layers, the at least two second layers and the substrate form a second group, among which the second layers are separated by second distances, respectively; where a minimum first distance is greater than a maximum second distance, and a quantity of the at least one first layer is less than a quantity of the at least two second layers.