公开(公告)号：US10096691B2

公开(公告)日：2018-10-09

申请号：US14812490

申请日：2015-07-29

Applicant: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES

Inventor： Qingzhu Zhang ,  Lichuan Zhao ,  Xiongkun Yang ,  Huaxiang Yin ,  Jiang Yan ,  Junfeng Li ,  Tao Yang ,  Jinbiao Liu

IPC: H01L29/66 ,  H01L21/265 ,  H01L29/167 ,  H01L29/417 ,  H01L21/28

Abstract: A method for forming a metal silicide. The method comprises: providing a substrate having a fin, a gate formed on the fin, and spacers formed on opposite sides of the gate; depositing a Ti metal layer; siliconizing the Ti metal layer; and removing unreacted Ti metal layer. As the Ti atoms have relatively stable characteristics, diffusion happens mostly to Si atoms while the Ti atoms rarely diffuse during the thermal annealing. As a result, current leakage can be prevented in a depletion region and thus leakage current of the substrate can be reduced.

公开(公告)号：US09679962B2

公开(公告)日：2017-06-13

申请号：US14814022

申请日：2015-07-30

Applicant: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES

Inventor： Miao Xu ,  Huilong Zhu ,  Lichuan Zhao

IPC: H01L29/06 ,  H01L21/265 ,  H01L21/82 ,  H01L27/092 ,  H01L21/8238 ,  H01L29/66

CPC classification number: H01L29/0638 ,  H01L21/26586 ,  H01L21/823807 ,  H01L21/823821 ,  H01L27/0924 ,  H01L29/0649 ,  H01L29/66545

Abstract: There is provided a method of manufacturing a Fin Field Effect Transistor (FinFET). The method may include: forming a fin on a semiconductor substrate; forming a dummy device including a dummy gate on the fin; forming an interlayer dielectric layer to cover regions except for the dummy gate; removing the dummy gate to form an opening; implanting ions to form a Punch-Through-Stop Layer (PTSL) in a portion of the fin directly under the opening, while forming reflection doped layers in portions of the fin on inner sides of source/drain regions; and forming a replacement gate in the opening.