公开(公告)号：US20240005974A1

公开(公告)日：2024-01-04

申请号：US18247446

申请日：2021-01-04

Applicant: INSTITUTE OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES

Inventor： Guozhong XING ,  Huai LIN ,  Yu LIU ,  Kaiping ZHANG ,  Kangwei ZHANG ,  Hangbing LV ,  Changqing XIE ,  Qi LIU ,  Ling LI ,  Ming LIU

IPC: G11C11/16

CPC classification number: G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  G11C11/1673

Abstract: A self-reference storage structure includes: three transistors, including a first transistor T1, a second transistor T2, and a third transistor T3; and two magnetic tunnel junctions, including a first magnetic tunnel junction MTJ0 and a second magnetic tunnel junction MTJ1. The first magnetic tunnel junction MTJ0 is connected in series between the first transistor T1 and the second transistor T2, and the second magnetic tunnel junction MTJ1 is connected in series between the second transistor T2 and the third transistor T3. When the first transistor T1, the second transistor T2 and the third transistor T3 are turned on, one-bit binary information is written; and when data is stored, one-bit binary write can be implemented only by applying an unidirectional current pulse.

公开(公告)号：US20230124011A1

公开(公告)日：2023-04-20

申请号：US18061953

申请日：2022-12-05

Applicant: INSTITUTE OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES

Inventor： Guozhong XING ,  Huai LIN ,  Di WANG ,  Long LIU ,  Kaiping ZHANG ,  Guanya WANG ,  Yan WANG ,  Xiaoxin XU ,  Ming LIU

IPC: H04L9/32 ,  H10N50/10 ,  G11C11/16 ,  H10N50/85 ,  H01F10/32 ,  G11C11/14 ,  G06F7/58 ,  H10N50/80

Abstract: A reconfigurable PUF device based on fully electric field-controlled domain wall motion includes a voltage control layer, upper electrodes, a lower electrode, antiferromagnetic pinning layers, and a magnetic tunnel junction (MTJ). The MTJ includes, from bottom to top, a ferromagnetic reference layer, a potential barrier tunneling layer and a ferromagnetic free layer. In the device, an energy potential well is formed in a middle portion of the ferromagnetic free layer by applying a voltage to the voltage control layer to control magnetic anisotropy, and a current is fed into either of the upper electrodes to drive generation of the magnetic domain walls and pin the magnetic domain walls to the potential well. After the voltage is removed, the potential well is lowered so that the magnetic domain walls are in a metastable state, thereby either a high resistance state or a low resistance state is randomly obtained.