公开(公告)号：DE102020113646A1

公开(公告)日：2021-01-21

申请号：DE102020113646

申请日：2020-05-20

Applicant: INTEL CORP

Inventor： HECK JOHN ,  FRISH HAREL ,  KAU DERCHANG ,  DENNISON CHARLES ,  RONG HAISHENG ,  DRISCOLL JEFFREY ,  DOYLEND JONATHAN K ,  GHIURCAN GEORGE A ,  FAVARO MICHAEL

IPC: G02B6/12 ,  G02B6/13 ,  G02B6/132 ,  H01L25/16

Abstract: Ausführungsformen enthalten Einrichtungen, Verfahren und Systeme, die eine Halbleiterphotonikvorrichtung enthalten, die ein Substrat, einen Wellenleiter, der oberhalb des Substrats angeordnet ist, eine Phasenänderungsschicht, die oberhalb des Wellenleiters angeordnet ist, und ein Heizelement, das oberhalb der Phasenänderungsschicht angeordnet ist, aufweist. Der Wellenleiter weist einen Brechungsindex auf, der basierend wenigstens teilweise auf einem Zustand eines Phasenänderungsmaterials, das in der Phasenänderungsschicht enthalten ist, modifiziert werden kann. Das Phasenänderungsmaterial der Phasenänderungsschicht ist in einem ersten Zustand aus einer Menge von Zuständen, und der Wellenleiter weist einen ersten Brechungsindex auf, der basierend auf dem ersten Zustand des Phasenänderungsmaterials bestimmt ist. Das Heizelement dient zum Erzeugen von Wärme, um das Phasenänderungsmaterial in einen zweiten Zustand aus der Menge von Zuständen zu transformieren, und der Wellenleiter weist einen zweiten Brechungsindex auf, der basierend auf dem zweiten Zustand des Phasenänderungsmaterials bestimmt ist. Andere Ausführungsformen können ebenfalls beschrieben und beansprucht sein.

公开(公告)号：WO2007053474A2

公开(公告)日：2007-05-10

申请号：PCT/US2006042102

申请日：2006-10-26

Applicant: INTEL CORP ,  DENNISON CHARLES ,  KARPOV ILYA

Inventor： DENNISON CHARLES ,  KARPOV ILYA

IPC: H01L45/00

CPC classification number: H01L45/06 ,  H01L27/2463 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/126 ,  H01L45/1675

Abstract: A phase change memory with higher column landing margin may be formed. In one approach, the column landing margin may be increased by increasing the height of an electrode. For example, the electrode being made of two disparate materials, one of which includes nitride and the other of which does not. In another approach, a hard mask is used which is of substantially the same material as an overlying and surrounding insulator. The hard mask and an underlying phase change material are protected by a sidewall spacer of a different material than the hard mask. If the hard mask and the insulator have substantially the same etch characteristics, the hard mask may be removed while maintaining the protective character of the sidewall spacer.

Abstract translation: 可以形成具有较高列着陆边缘的相变存储器。 在一种方法中，可以通过增加电极的高度来增加列着色边缘。 例如，电极由两种不同的材料制成，其中之一包括氮化物，另一个不包括氮化物。 在另一种方法中，使用与覆盖和围绕的绝缘体基本上相同的材料的硬掩模。 硬掩模和下面的相变材料由与硬掩模不同的材料的侧壁间隔物保护。 如果硬掩模和绝缘体具有基本相同的蚀刻特性，则可以去除硬掩模，同时保持侧壁间隔物的保护特性。

公开(公告)号：DE602005003232D1

公开(公告)日：2007-12-20

申请号：DE602005003232

申请日：2005-06-24

Applicant: INTEL CORP

Inventor： PARKINSON WARD ,  DENNISON CHARLES ,  HUDGENS STEPHEN

IPC: G11C16/02

Abstract: A memory may include a phase change memory element and series connected first and second selection devices. The second selection device may have a higher resistance and a larger threshold voltage than the first selection device. In one embodiment, the first selection device may have a threshold voltage substantially equal to its holding voltage. In some embodiments, the selection devices and the memory element may be made of chalcogenide. In some embodiments, the selection devices may be made of non-programmable chalcogenide. The selection device with the higher threshold voltage may contribute lower leakage to the combination, but may also exhibit increased snapback. This increased snapback may be counteracted by the selection device with the lower threshold voltage, resulting in a combination with low leakage and high performance in some embodiments.

公开(公告)号：DE602005003232T2

公开(公告)日：2008-08-28

申请号：DE602005003232

申请日：2005-06-24

Applicant: INTEL CORP

Inventor： PARKINSON WARD ,  DENNISON CHARLES ,  HUDGENS STEPHEN

IPC: G11C16/02

Abstract: A memory may include a phase change memory element and series connected first and second selection devices. The second selection device may have a higher resistance and a larger threshold voltage than the first selection device. In one embodiment, the first selection device may have a threshold voltage substantially equal to its holding voltage. In some embodiments, the selection devices and the memory element may be made of chalcogenide. In some embodiments, the selection devices may be made of non-programmable chalcogenide. The selection device with the higher threshold voltage may contribute lower leakage to the combination, but may also exhibit increased snapback. This increased snapback may be counteracted by the selection device with the lower threshold voltage, resulting in a combination with low leakage and high performance in some embodiments.

公开(公告)号：AT377830T

公开(公告)日：2007-11-15

申请号：AT05772144

申请日：2005-06-24

Applicant: INTEL CORP

Inventor： PARKINSON WARD ,  DENNISON CHARLES ,  HUDGENS STEPHEN

IPC: G11C16/02

Abstract: A memory may include a phase change memory element and series connected first and second selection devices. The second selection device may have a higher resistance and a larger threshold voltage than the first selection device. In one embodiment, the first selection device may have a threshold voltage substantially equal to its holding voltage. In some embodiments, the selection devices and the memory element may be made of chalcogenide. In some embodiments, the selection devices may be made of non-programmable chalcogenide. The selection device with the higher threshold voltage may contribute lower leakage to the combination, but may also exhibit increased snapback. This increased snapback may be counteracted by the selection device with the lower threshold voltage, resulting in a combination with low leakage and high performance in some embodiments.

公开(公告)号：DE10339061A1

公开(公告)日：2004-07-15

申请号：DE10339061

申请日：2003-08-26

Applicant: INTEL CORP

Inventor： DENNISON CHARLES

IPC: H01L27/115 ,  H01L45/00 ,  H01L27/10 ,  G11C13/02

Abstract: Briefly, in accordance with an embodiment of the invention, a phase change memory and a method to manufacture a phase change memory is provided. The phase change memory may include an electrode, an adhesive material, an insulating material between the electrode and the adhesive material, wherein a portion of the adhesive material, a portion of the insulating material, and a portion of the electrode form a substantially planar surface. The phase change memory may further include a phase change material on the substantially planar surface and contacting the electrode, the adhesive material, and the insulating material.